Abstract: In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.

Abstract: The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value.

Abstract: A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a ? wave, concerning a method for rotating the ? wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a ?-wave merging box, and a reflective-wave control unit using a reflection control chamber.

Abstract: A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.

Abstract: To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift.

Abstract: The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value.

Abstract: The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.

Abstract: The present invention provides a plasma processing apparatus for processing a sample on a sample stand in a vacuum container whose inside pressure is reduced, with a plasma generated in an upper space above the sample stand. The apparatus comprises: an electric discharge chamber disposed in the vacuum container and above the sample stand, and having a discharge-chamber sidewall surrounding the upper space; a vacuum chamber disposed in the vacuum container and below the electric discharge chamber, and in communication with the electric discharge chamber; a vacuum-chamber sidewall disposed inside the vacuum container to surround the sample stand, and constituting a side surface of the vacuum chamber; a first temperature regulator disposed outside the discharge-chamber sidewall to adjust a temperature of the discharge-chamber sidewall; and a second temperature regulator controlling a temperature of the vacuum-chamber sidewall to a value lower than the temperature of the discharge-chamber sidewall.

Abstract: The invention provides a highly reliable plasma processing apparatus having stable sealing performance.

Abstract: The present invention provides a plasma processing apparatus that can accomplish fine and precise processing of a sample over a wide area of the surface thereof. A plasma processing apparatus 100 has a processing chamber 101, a sample stage 102 that is supplied with different amounts of coolants at the middle part and the circumference part thereof, and a shower plate 109 that is supplied with different amounts of gases at the middle part and the circumference part thereof.

Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.

Abstract: The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

Abstract: A vacuum processing apparatus comprising a transfer unit 112 disposed at a center thereof, plural processing chambers 103, 104, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit 107 interposed between two processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.