Patents by Inventor Akitaka Makino

Akitaka Makino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6850012
    Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements and a plurality of lead wire portions for effecting connection between the coil elements. The coil elements are disposed inside of a process chamber, while the lead wire portions which effect connection between the coil elements are disposed outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division thereof, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.
    Type: Grant
    Filed: August 21, 2002
    Date of Patent: February 1, 2005
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Manabu Edamura, Kazuyuki Ikenaga, Ken Yoshioka, Akitaka Makino
  • Publication number: 20030057845
    Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements, and a plurality of lead wire portions for connecting between the coil elements. The coil elements are disposed in the inside of a process chamber, while the lead wire portions are disposed in the outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.
    Type: Application
    Filed: August 21, 2002
    Publication date: March 27, 2003
    Inventors: Manabu Edamura, Kazuyuki Ikenaga, Ken Yoshioka, Akitaka Makino
  • Patent number: 5607510
    Abstract: To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump. Further, the exhaust arrangement can be provided at a shifted position so as to allow a work space beneath a work table.
    Type: Grant
    Filed: February 27, 1995
    Date of Patent: March 4, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Akitaka Makino, Naoyuki Tamura, Tetsunori Kaji
  • Patent number: 5458687
    Abstract: A wafer processing apparatus comprises a vacuum processing chamber, and a wafer holder disposed within the vacuum processing chamber to hold a wafer to be processed fixedly thereon by electrostatic attraction. A cooling or heating gas is supplied into the space between the surface of the wafer holder and the backside of a wafer set on the wafer holder to cool or heat the wafer. In case the electrostatic attraction disappears accidentally due to, for example, power failure, the cooling or heating gas in the space between the surface of the wafer holder and the backside of the wafer set on the wafer holder is discharged quickly upon the disappearance of the electrostatic attraction between the wafer holder and the wafer to prevent the wafer being caused to float and being dislocated by the pressure of the cooling or heating gas existing in the space between the surface of the wafer holder and the backside of the wafer.
    Type: Grant
    Filed: November 18, 1993
    Date of Patent: October 17, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Hiroyuki Shichida, Naoyuki Tamura, Akitaka Makino
  • Patent number: 5391260
    Abstract: To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump.
    Type: Grant
    Filed: March 26, 1993
    Date of Patent: February 21, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Akitaka Makino, Naoyuki Tamura, Tetsunori Kaji