Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

Abstract: In one embodiment, a processing chamber, suitable for use in semiconductor processing, includes a chamber body enclosing an interior volume. A susceptor is disposed in the interior volume, and the interior volume includes a purge interior volume below the susceptor and a process volume above the substrate support. A liner is disposed radially outward of the susceptor. The processing chamber also includes a preheat ring. The preheat ring is configured to engage the susceptor when the susceptor is an elevated processing position and to engage the liner when the susceptor is in a lowered loading/unloading position.

Abstract: The present disclosure relates to heat source arrangements, processing chambers, and related methods to facilitate deposition process adjustability. In one implementation, a processing chamber applicable for use in semiconductor manufacturing includes a lower window and an upper window. The lower window and the upper window at least partially define an internal volume. The processing chamber includes a substrate support disposed in the internal volume, and the substrate support includes a support face. The processing chamber includes one or more inner heat sources. Each inner heat source of the one or more inner heat sources is oriented substantially parallel to a surface of the support face. The processing chamber includes one or more outer heat sources disposed outwardly of the inner heat sources. Each outer heat source of the one or more outer heat sources is oriented nonparallel to the surface of the support face.

Abstract: A reflector and processing chamber having the same are described herein. In one example, a reflector is provided that includes cylindrical body, a cooling channel, and a reflective coating. The cylindrical body has an upper surface and a lower surface. The lower surface has a plurality of concave reflector structures disposed around a centerline of the cylindrical body. The cooling channel disposed in or on the cylindrical body. The reflective coating is disposed on the plurality of concave reflector structures.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: A coating on a processing chamber component includes a metallic bond layer deposited on a surface of the component. A thermal barrier layer is deposited on the bond layer. A substantially non-porous ceramic sealing layer is deposited on the thermal barrier layer. The sealing layer substantially conforms to irregularities of the surface of the thermal barrier layer. A chemistry of the sealing layer is selected for resistance to attack from halogen-containing chemicals.

Abstract: The present disclosure relates to chambers and related methods and structures for batch cooling or heating. In one implementation, a chamber applicable for use in semiconductor manufacturing includes a base, a lid, and one or more sidewalls between the base and the lid. The base, the lid, and the one or more sidewalls at least partially define an internal volume. The chamber includes a cassette disposed in the internal volume. The cassette includes a first outer plate, a second outer plate spaced from the first outer plate, and a plurality of levels between the first outer plate and the second outer plate. The plurality of levels include a plurality of substrate supports spaced from each other between the first outer plate and the second outer plate. The chamber includes one or more baffles disposed outwardly of the cassette.

Abstract: A processing chamber is disclosed and includes a chamber body. The chamber body has a first side, a second side opposite the first side, a window assembly, and a base. The first and second side, the window assembly and the base define a thermal processing region. A flow assembly is disposed adjacent the first side and configured to introduce a processing gas into the thermal processing region. An exhaust slit assembly is disposed adjacent the second side. The exhaust slit assembly has an opening exposed to the thermal processing region. The opening having a center and an outer edge of the opening. The center of the opening and edge of the opening vertically defined between the window assembly and the base. Wherein an outer height at the edge of the opening is at least 30% larger in a vertical direction than a center height at the center of the opening.

Abstract: The present disclosure relates to cassette structures and related methods for batch processing in epitaxial deposition operations. In one implementation, a cassette configured for disposition in a substrate processing chamber includes a first wall, a second wall spaced from the first wall, and one or more sidewalls extending between and coupled to the first wall and the second wall. The cassette includes one or more inlet openings formed in the one or more sidewalls, and one or more outlet openings formed in the one or more sidewalls opposite the one or more inlet openings. The cassette includes a plurality of levels that include a plurality of substrate supports mounted to the one or more sidewalls and spaced from each other along the one or more sidewalls.

Abstract: An apparatus for rotating a substrate within a deposition chamber is described. The substrate is rotated using a substrate support assembly with a shaft and a susceptor coupled to a top of the shaft. The susceptor and the shaft are coupled together using a cogged feature. The cogged feature includes a plurality of teeth or projections on a coupling portion of the shaft which interlock with an indent disposed on the bottom of the susceptor. A lift pin assembly is further coupled to the shaft and configured to raise and lower a substrate from the susceptor.

Abstract: The present disclosure relates to flow guide structures and heat shield structures, and related methods, for deposition uniformity and process adjustability. In one implementation, an apparatus for substrate processing includes a chamber body that includes a processing volume. The apparatus includes one or more heat sources. The apparatus includes a flow guide structure positioned in the processing volume. The flow guide structure includes one or more first flow dividers that divide the processing volume into a plurality of flow levels, and one or more second flow dividers oriented to intersect the one or more first flow dividers and divide each flow level of the plurality of flow levels into a plurality of flow sections. The flow guide structure includes one or more third flow dividers oriented to intersect the one or more second flow dividers and divide the plurality of flow sections into a plurality of flow zones.

Abstract: The present disclosure relates to batch processing apparatus, systems, and related methods and structures for epitaxial deposition operations. In one implementation, an apparatus for substrate processing includes a cassette. The cassette is at least partially supported by a pedestal assembly. The cassette includes a plurality of levels arranged vertically with respect to each other, each level of the plurality of levels including a support surface configured to support a substrate. A level spacing between adjacent levels of the plurality of levels is 25 mm or higher, and the level spacing is defined between the support surfaces of the adjacent levels.

Abstract: In embodiments, a method includes receiving, by a processing device, first sensor data generated by a plurality of sensors of a process chamber of a manufacturing system during execution of a fabrication process. The method includes receiving, by the processing device, second sensor data generated by one or more external sensors that are not components of the process chamber during execution of the fabrication process. The method includes determining, by the processing device, environmental resource usage data indicative of an environmental resource consumption of the fabrication process run on the process chamber based on the first sensor data and the second sensor data. The method includes providing, by the processing device, the environmental resource usage data for display on a graphical user interface (GUI).

Abstract: Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a process kit for disposition in a processing chamber applicable for use in semiconductor manufacturing includes a plate having a first face and a second face opposing the first face. The process kit includes a liner. The liner includes an annular section, and one or more ledges extending inwardly relative to the annular section. The one or more ledges are configured to support one or more outer regions of the second face of the plate. The liner includes one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide applicable for use in semiconductor manufacturing, includes a plate having a first face and a second face opposing the first face. The flow guide includes a first fin set extending from the second face, and a second fin set extending from the second face. The second fin set is spaced from the first fin set to define a flow path between the first fin set and the second fin set. The flow path has a serpentine pattern between the first fin set and the second fin set.

Abstract: The present disclosure relates to flow guides, process kits, and related methods for processing chambers to facilitate deposition process adjustability. In one implementation, a flow guide includes a middle plate having a first side and a second side opposing the first side along a first direction. The first side and the second side are arcuate. The flow guide includes a first flange extending outwardly relative to a third side of the middle plate and outwardly relative to an outer face of the middle plate, and a second flange extending outwardly relative to a fourth side of the middle plate and outwardly relative to the outer face of the middle plate. The fourth side opposes the third side along a second direction that intersects the first direction. The flow guide includes a rectangular flow opening defined between the first flange and the second flange.

Abstract: Aspects generally relate to methods, systems, and apparatus for conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system. In one aspect, a corrected flow curve is created for a range of target flow rates across a plurality of setpoints. In one implementation, a method of conducting a calibration operation for a plurality of mass flow controllers (MFCs) of a substrate processing system includes prioritizing the plurality of MFCs for the calibration operation. The prioritizing includes determining an operation time for each MFC of the plurality of MFCs, and ranking the plurality of MFCs in a rank list according to the operation time for each MFC. The method includes conducting the calibration operation for the plurality of MFCs according to the rank list and during an idle time for the substrate processing system.

Abstract: Embodiments disclosed herein include a lamp module for a semiconductor processing chamber. In an embodiment, the lamp module plate comprises a back plate, a first ring that extends from the back plate, a second ring that extends from the back plate, and a third ring that extends from the back plate. In an embodiment, the lamp module further comprises a first plurality of lamps between the first ring and the second ring, a second plurality of lamps between the second ring and the third ring, and a third plurality of lamps configured to emit infrared radiation that propagates into the third ring.

Abstract: A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.