Abstract: Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

Abstract: A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are a 3D mapping device that is configured to measure the surface profile of a non-round substrate and a position of the substrate on the robot arm.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.

Abstract: A phacoemulsification transducer assembly includes a reflector and a driver connected to the reflector. The driver has a known driver vibration frequency range. A horn is connected to the driver opposite the reflector. A needle is connected to the horn opposite the driver. The needle has a known free shaft length. To maximize a desired stroke length of the needle for a minimal amount of power applied to the driver, a material forming the needle is chosen such that a speed of sound through the material results in a quarter-wavelength distance at the driver vibration frequency range substantially equal to the needle free shaft length.

Abstract: Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

Abstract: A phacoemulsification needle includes a hub for connection to an ultrasonic handpiece. An elongated shaft is formed with the hub and extends from the hub. A distal end of the shaft breaks-up tissue when the distal end is caused to be vibrated by the handpiece. At least a distal portion of the shaft is formed of a material that has properties providing advantages compared to a metal needle. Example properties include a substantially lower density, a substantially higher electrical resistivity, a substantially lower thermal conductivity, a substantially lower mechanical lateral stiffness, a substantially higher efficiency of converting electrical energy powering the handpiece into motion of the distal end, a substantially lower acoustical impedance, a substantially higher Poisson's ratio, and a substantially higher mechanical gain.

Abstract: A method and apparatus to determine a temperature of a substrate using a spectrum of radiation is disclosed herein. In one aspect, a process chamber includes a lamp assembly optically coupled to a spectrometer. The spectrometer is used to determine a temperature of a substrate within the process chamber. A controller is coupled to the spectrometer and controls the lamp assembly to selectively heat and cool the substrate. In another aspect, a method of includes exposing a substrate to a radiation source. A spectrum of radiation is detected by a spectrometer across a substrate. The spectrum of radiation passed through the substrate is determined and used to determine a temperature of the substrate.

Abstract: A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Abstract: Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Abstract: An improved system and method of measuring the temperature of a workpiece being processed is disclosed. The temperature measurement system determines a temperature of a workpiece by measuring the amount of expansion in the workpiece due to thermal expansion. The amount of expansion may be measured using a number of different techniques. In certain embodiments, a light source and a light sensor are disposed on opposite sides of the workpiece. The total intensity of the signal received by the light sensor may be indicative of the dimension of the workpiece. In another embodiment, an optical micrometer may be used. In another embodiment, a light sensor may be used in conjunction with a separate device that measures the position of the workpiece.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are methods and apparatus that detect radiation transmitted along the thickness of the substrate between the top surface and the bottom surface, determine a signal strength as the substrate is rotated and obtaining a signal strength pattern to determine a position of the substrate within the chamber with respect to a center position.

Abstract: Described herein are apparatus and methods used to process a substrate in a chamber, in particular to position a non-round substrate in a holding chamber or a processing chamber. Further described herein are a 3D mapping device that is configured to measure the surface profile of a non-round substrate and a position of the substrate on the robot arm.

Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Abstract: A system for heating substrates while being transported between the load lock and the platen is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed above the alignment station. The LEDs may be GaN or GaP LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. The LEDs may be arranged so that the rotation of the substrate during alignment results in a uniform temperature profile of the substrate. Further, heating during alignment may also increase throughput and eliminate preheating stations that are currently associated with the processing chamber.

Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Abstract: An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.