Abstract: A technique relates to a method of optimizing self-aligned double patterning. Predefined locations for required metal cuts are provided in order to form metal wires from metal fills that have been cut. Extended locations for extended metal cuts are provided in order to cut adjacent metal fills. The adjacent metal fills are the metal fills that are adjacent to the predefined locations for the required metal cuts, and the extended metal cuts extend beyond the required metal cuts. The required metal cuts into the metal fills are performed and the extended metal cuts into the adjacent metal fills are performed.

Abstract: A method for forming a multiplexor integrated circuit includes employing four complementary pairs of vertical field effect transistor (VFET) pairs, each of the complementary pairs of VFETs includes a first VFET device having a gate and a second VFET device having a gate, the gate of the first VFET device is connected to the gate of the second VFET device. The four complementary pairs VFET pairs are arranged to form a signal input portion of the multiplexor with four contact poly pitch (CPP) The plurality source/drain connections are operably connected.

Abstract: A method for device layout with vertical transistors includes identifying active area regions in a layout of a semiconductor device with vertical transistors. Sets of adjacent active area regions having a same electrical potential are determined. The sets of adjacent active area regions to be merged are prioritized based upon one or more performance criterion. The sets of adjacent active area regions are merged to form larger active area regions according to a priority.

Abstract: Logic circuits, or logic gates, are disclosed comprising vertical transport field effect transistors and one or more active gates, wherein the number of CPP's for the logic circuit, in isolation, is equal to the number of active gates. The components of the logic circuit can be present in at least three different vertical circuit levels, including a circuit level comprising at least one horizontal plane passing through a conductive element that provides an input voltage to the one or more gate structures and another conductive element that provides an output voltage of the logic circuit, and another circuit level that comprises a horizontal plane passing through a conductive bridge from the N output to P output of the field effect transistors. Such logic circuits can include single-gate inverters, two-gate inverters, NOR2 logic gates, and NAND3 logic gates, among other more complicated logic circuits.

Abstract: A technique relates to a method of optimizing self-aligned double patterning. Predefined locations for required metal cuts are provided in order to form metal wires from metal fills that have been cut. Extended locations for extended metal cuts are provided in order to cut adjacent metal fills. The adjacent metal fills are the metal fills that are adjacent to the predefined locations for the required metal cuts, and the extended metal cuts extend beyond the required metal cuts. The required metal cuts into the metal fills are performed and the extended metal cuts into the adjacent metal fills are performed.

Abstract: Logic circuits, or logic gates, are disclosed comprising vertical transport field effect transistors and one or more active gates, wherein the number of CPP's for the logic circuit, in isolation, is equal to the number of active gates. The components of the logic circuit can be present in at least three different vertical circuit levels, including a circuit level comprising at least one horizontal plane passing through a conductive element that provides an input voltage to the one or more gate structures and another conductive element that provides an output voltage of the logic circuit, and another circuit level that comprises a horizontal plane passing through a conductive bridge from the N output to P output of the field effect transistors. Such logic circuits can include single-gate inverters, two-gate inverters, NOR2 logic gates, and NAND3 logic gates, among other more complicated logic circuits.

Abstract: A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.

Abstract: Generating place and route abstracts, including: for each of a plurality of cells, generating a wire diagram; for each generated wire diagram, generating, in dependence upon a cell architecture layout, a cell architecture description; for each cell architecture description: generating, in dependence upon the wire diagrams and the cell architecture descriptions, a blockage map specifying locations where the placement of cells or routing structures is prohibited; and generating, in dependence upon the blockage maps and one or more design rules, a library exchange format (‘LEF’) abstract.

Abstract: Generating place and route abstracts, including: for each of a plurality of cells, generating a wire diagram; for each generated wire diagram, generating, in dependence upon a cell architecture layout, a cell architecture description; for each cell architecture description: generating, in dependence upon the wire diagrams and the cell architecture descriptions, a blockage map specifying locations where the placement of cells or routing structures is prohibited; and generating, in dependence upon the blockage maps and one or more design rules, a library exchange format (‘LEF’) abstract.

Abstract: Various embodiments include solutions for generating a physically unclonable function. In some cases, a method includes an electronic circuit including: a static random access memory (SRAM) device having at least one memory cell with at least one transistor device therein, SRAM bias temperature instability aging circuitry coupled with the SRAM device and configured to apply aging conditions to the at least one memory cell to degrade the at least one transistor device within the at least one memory cell, and at least one computing device coupled with the SRAM device and configured to: skew a storage cell value in the at least one transistor device, measure a skewed value of the storage cell after the skewing, and create a physically unclonable function from the skewed value of the storage cell.

Abstract: Various embodiments include solutions for generating a physically unclonable function. In some cases, a method includes an electronic circuit including: a static random access memory (SRAM) device having at least one memory cell with at least one transistor device therein, SRAM bias temperature instability aging circuitry coupled with the SRAM device and configured to apply aging conditions to the at least one memory cell to degrade the at least one transistor device within the at least one memory cell, and at least one computing device coupled with the SRAM device and configured to: skew a storage cell value in the at least one transistor device, measure a skewed value of the storage cell after the skewing, and create a physically unclonable function from the skewed value of the storage cell.

Abstract: A semiconductor device structure is embedded within a semiconductor chip that calibrates a photon-emission luminosity scale by running multiple known currents through the device. The method comprises embedding at least one photon emission device in an integrated circuit having at least one functional device. A control current is applied to the at least one photon emission device. The photon emission intensity produced by the at least one photon emission device is captured. The current density of the at least one photon emission device is calculated. A test current is applied to the at least one functional device. The photon emission intensity produced by the at least one functional device is captured. The current density of the at least one functional device is estimated based on a comparison with the calculated current density of the at least one photon emission device.

Abstract: Aspects of the invention provide for a structure and method for determining a degree of process variation skew between a plurality of bit cells in a static random-access-memory (SRAM) column architecture. In one embodiment, a structure includes: a plurality of bit cells within a static random access memory (SRAM) column architecture; a digital-to-analog converter (DAC) connected to the bit cells through a pair of multiplexers; and a pre-charge circuit connected to the bit cells through the pair of multiplexers, wherein the DAC and the pre-charge circuit control and test the bit cells to determine a degree of process variation skew between each of the bit cells.

Abstract: A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.

Abstract: Systems and methods for determining adjustable wafer acceptance criteria based on chip characteristics. The method includes measuring a density of at least one chip. The method further includes computing a difference in density between the density of the at least one chip and a density of at least one kerf structure. The method further includes calculating an offset value to modify a Wafer Acceptance Criteria (WAC) to match the density difference between the at least one chip and the at least one kerf structure. The method further includes applying the offset value to the WAC for a wafer level measurement in order to increase chip yield performance.

Abstract: A read only memory (ROM) with redundancy and methods of use are provided. The ROM with redundancy includes a programmable array coupled to a repair circuit having one or more redundant repairs. The one or more redundant repairs include a word address match logic block, a data I/O address, and a tri-state buffer. The word address match logic block is provided to the tri-state buffer as a control input and the data I/O address is provided to the tri-state buffer as an input. An output of the tri-state buffer of each redundant repair is provided as a first input to one or more logic devices. One or more data outputs of a ROM bit cell array is provided as a second input to a respective one of the one or more logic devices.

Abstract: Aspects of the invention provide for a structure and method for determining a degree of process variation skew between a plurality of bit cells in a static random-access-memory (SRAM) column architecture. In one embodiment, a structure includes: a plurality of bit cells within a static random access memory (SRAM) column architecture; a digital-to-analog converter (DAC) connected to the bit cells through a pair of multiplexers; and a pre-charge circuit connected to the bit cells through the pair of multiplexers, wherein the DAC and the pre-charge circuit control and test the bit cells to determine a degree of process variation skew between each of the bit cells.

Abstract: Systems and methods are provided to optimize critical paths by modulating systemic process variations, such as regional timing variations in IC designs. A method includes determining a physical location of an element in the semiconductor chip design within the critical path. The method further includes modulating a systemic process variation of the semiconductor chip design to speed up the critical path based on a polysilicon conductor perimeter density associated with the element.

Abstract: Aspects of the invention provide an electrostatic discharge (ESD) protection device for eliminating current leakage, and a related method. In one embodiment, an ESD protection device includes: a resistor-capacitor (RC) circuit for receiving a power supply voltage; an ESD clamp including a plurality of n-type field-effect transistors (nFETs) for protecting the IC during an ESD event; a trigger circuit for receiving an output of the RC circuit and generating a trigger pulse to turn on the ESD clamp during the ESD event; and an nFET bias selection circuit connected to the trigger circuit, the nFET bias selection circuit for selecting one of: a low voltage supply or a negative bias voltage supply for the trigger circuit, such that the trigger circuit generates a trigger pulse, in response to selecting the negative bias voltage supply, to turn off the ESD clamp during normal operation.

Abstract: Aspects of the invention provide an electrostatic discharge (ESD) protection device for eliminating current leakage, and a related method. In one embodiment, an ESD protection device includes: a resistor-capacitor (RC) circuit for receiving a power supply voltage; an ESD clamp including a plurality of n-type field-effect transistors (nFETs) for protecting the IC during an ESD event; a trigger circuit for receiving an output of the RC circuit and generating a trigger pulse to turn on the ESD clamp during the ESD event; and an nFET bias selection circuit connected to the trigger circuit, the nFET bias selection circuit for selecting one of: a low voltage supply or a negative bias voltage supply for the trigger circuit, such that the trigger circuit generates a trigger pulse, in response to selecting the negative bias voltage supply, to turn off the ESD clamp during normal operation.