Abstract: There is provided a hydroxyl-functional carbamoyl organosilicon compound, an anti-corrosion and/or adhesion promoting coating composition based thereon, a method for coating a metal surface employing the coating composition and the resulting coated metal article.

Abstract: A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or more hydroxyl groups and, optionally, one or more organonitrogen groups, said hydroxyl group(s) and optional organonitrogen group(s) being bonded to different carbon atoms of a bridging group linking such group(s) to the silicon atom of the partially or substantially completely hydrolyzed and optionally partially condensed silane; and, b) curing the curable coating composition on the surface of the metal to provide an anti-corrosion and/or adhesion promoting coating thereon.

Abstract: Epoxysilanes are provided which contain at least one epoxy group, at least one hydrolyzable silyl group and one or more linkages containing a carbonyl group bonded to heteroatoms selected from the group consisting of oxygen, sulfur and nitrogen with at least one such heteroatom being nitrogen, there being no such linkage in which both an epoxy group and hydrolyzable silyl group are directly or indirectly bonded to the same nitrogen heteroatom in the linkage.

Abstract: A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or more hydroxyl groups and, optionally, one or more organonitrogen groups, said hydroxyl group(s) and optional organonitrogen group(s) being bonded to different carbon atoms of a bridging group linking such group(s) to the silicon atom of the partially or substantially completely hydrolyzed and optionally partially condensed silane; and, b) curing the curable coating composition on the surface of the metal to provide an anti-corrosion and/or adhesion promoting coating thereon.

Abstract: A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or more hydroxyl groups and, optionally, one or more organonitrogen groups, said hydroxyl group(s) and optional organonitrogen group(s) being bonded to different carbon atoms of a bridging group linking such group(s) to the silicon atom of the partially or substantially completely hydrolyzed and optionally partially condensed silane; and, b) curing the curable coating composition on the surface of the metal to provide an anti-corrosion and/or adhesion promoting coating thereon.

Abstract: Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes.

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract: A method of coating at least a portion of the exposed surface of a metal comprises: a) applying to said surface a curable coating composition comprising an aqueous solution of at least one partially or substantially completely hydrolyzed, and optionally partially condensed, silane possessing one or more hydroxyl groups and, optionally, one or more organonitrogen groups, said hydroxyl group(s) and optional organonitrogen group(s) being bonded to different carbon atoms of a bridging group linking such group(s) to the silicon atom of the partially or substantially completely hydrolyzed and optionally partially condensed silane; and, b) curing the curable coating composition on the surface of the metal to provide an anti-corrosion and/or adhesion promoting coating thereon.

Abstract: There is provided a hydroxyl-functional carbamoyl organosilicon compound, an anti-corrosion and/or adhesion promoting coating composition based thereon, a method for coating a metal surface employing the coating composition and the resulting coated metal article.

Abstract: An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ?5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative of hexafluoroacetone; and measuring the concentration of the water derivative of hexafluoroacetone by gas chromatography.

Abstract: Epoxysilanes are provided which contain at least one epoxy group, at least one hydrolyzable silyl group and one or more linkages containing a carbonyl group bonded to heteroatoms selected from the group consisting of oxygen, sulfur and nitrogen with at least one such heteroatom being nitrogen, there being no such linkage in which both an epoxy group and hydrolyzable silyl group are directly or indirectly bonded to the same nitrogen heteroatom in the linkage.

Abstract: A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract: An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising ?5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a water derivative of hexafluoroacetone; and measuring the concentration of the water derivative of hexafluoroacetone by gas chromatography.

Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.

Abstract: A method of synthesizing an aminosilane source reagent composition, by reacting an aminosilane precursor compound with an amine source reagent compound in a solvent medium comprising at least one activating solvent component, to yield an aminosilane source reagent composition having less than 1000 ppm halogen.

Abstract: An organosilicon precursor for vapor deposition, e.g., low pressure (<100 Torr), plasma-enhanced chemical vapor deposition (PECVD) of a low k, high strength dielectric film, wherein the precursor includes at least one of: (i) silicon-pendant oxiranyl functionality; and (ii) a disilyl moiety of the formula wherein x is an integer having a value of from 0 to 4 inclusive. These precursors are useful for the formation of dielectric films having dielectric constants on the order of ˜3 and less, and a hardness exceeding ˜1 GigaPascals.

Abstract: A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Abstract: A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

Abstract: A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.