Abstract: Covering metal test pads of a passivated integrated circuit process intermediate wafer or completed integrated circuit chip-to-test, with a thin conductive overlayer, and then accessing the test pads through the passivation layer and conductive overlayer, by a pulsed laser to provide voltage-modulated photon-assisted tunneling through the insulation layer, to the conductive overlayer as an electron current, and detecting the resulting electron current, provides a nondestructive test of integrated circuits. The passivation, normally present to protect the integrated circuit, also lowers the threshold for photoelectron emission. The conductive overlayer acts as a photoelectron collector for the detector. A chip-to-test which is properly designed for photon assisted tunneling testing has test sites accessible to laser photons even though passivated.

Abstract: A process for defining small dimensions by forming a vertical step in an etchable material; edge depositing a masking material by angularly evaporating a metal; and etching away all of the first material not covered by the masking material; and device obtained by depositing source, drain, and gate defining material.

Abstract: A solid state rechargeable battery containing an alkali metal-containing electrode, a solid electrolyte, and an intercalation graphite-containing layer.

Abstract: A display device, addressing circuitry, and semiconductor control logic are all portions of an integrated structure formed by thin film technology on a single silicon wafer. The display comprises a thin film micromechanical electrostatic form of light reflective display formed by depositing thin films upon a silicon wafer and selectively etching to form metal-amorphous oxide micromechanical leaves deflected by applying potential thereto to provide electrostatic deflection. MOSFET devices are also formed upon the silicon wafer in juxtaposition with a plurality of micromechanical display elements. Addressing circuitry is connected to the MOSFET devices.