Abstract: A network device including a main bridge, a first bridge, a controller, and an Ethernet port is provided. When the Ethernet port is connected to a mesh network, the processing unit performs the following steps: controlling the Ethernet port to transmit a first broadcast packet; when the Ethernet port receives a second broadcast packet, parsing the second broadcast packet to extract the packet path information to determine whether a path loop exists; determining, according to the Ethernet interface weight (EIW), the slave interface uplink weight (SIUW), and the master device weight (MW) carried by the first broadcast packet and the second broadcast packet, (1) whether the network device plays a master device role, (2) whether the bridge of the Ethernet port is set as the main bridge or the first bridge, and (3) whether the Ethernet port allows data transmission.

Abstract: A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: A method for dyeing a functional contact lens includes steps of: providing a lens body; formulating a first solution, wherein the first solution is an ionic salt solution containing an alkali; placing the lens body in the first solution and reacting at 30° C. to 80° C.; formulating a second solution, wherein the second solution is an ionic salt solution containing at least one reactive dye; and placing the lens body in the second solution and reacting at 30° C. to 80° C.; wherein the at least one reactive dye reacts with the lens body to be fixed to a surface portion of the lens body. In order to achieve one or a portion or all of the above or other objects, the present invention further provides a functional contact lens including a lens body and a dye layer on a surface of the lens body and can be obtained by the aforementioned method.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: Methods and compositions for inhibiting and/or interfering with interactions between (1) programmed Death-1 protein (also known as CD279) and (2) programmed death-ligand 1 (PD-L1) and/or programmed death-ligand 2 (PD-L2) are disclosed. In addition, methods and compositions for increasing IL-2 levels in a cell, and methods and compositions for preventing, treating, or ameliorating the effects of cancer in a subject, are disclosed.

Abstract: A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.

Abstract: A backhaul bandwidth management method for a wireless network is provided. Firstly, a backhaul connection mode is adjusted by a network device in a backhaul network according to a wireless capability. Then, a backhaul guaranteed bandwidth is guaranteed by the network device according to at least one of a dedicated service set identifier (SSID), a dedicated radio frequency (RF) band and a dedicated wireless mode. Then, a bandwidth allocation algorithm is executed by the network device to ensure that at least one backhaul transmission connection has the backhaul guaranteed bandwidth. Finally, a backhaul SSID is set to a first wireless network standard only mode by the network device to ensure that data transmission will not be interfered with by other network devices transmitting data according to a second wireless network standard in the backhaul network.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: An input system includes a first gesture detection unit and a second gesture detection unit. The first gesture detection unit includes a first light emitting device for emitting a first light beam, a first light sensing device for receiving the first light beam reflected by a first motion trajectory generated by a user and outputting a first image signal, and a first processing unit for processing the first image signal and outputting a first command signal. The second gesture detection unit includes a second light emitting device for emitting a second light beam, a second light sensing device for receiving the second light beam reflected by a second motion trajectory generated by the user and outputting a second image signal, and a second processing unit for processing the second image signal and outputting a second command signal.

Abstract: A vaporization pipe for a kerosene lamp has an oil tube, a thermally conductive tube, and a first passage. The oil tube is made of steel and has a vaporization jet on a top of the oil tube. The thermally conductive tube is mounted in the oil tube and forms a first channel. The first passage is disposed between the oil tube and the thermally conductive tube. The steel oil tube can prevent the vaporization pipe from being softened and bent during the preheating of vaporization pipe or burning of the kerosene, and thus a useful lifetime of the vaporization pipe is prolonged. The thermally conductive tube is made of high-thermal-conductivity material for keeping the vaporization pipe with adequate thermal conductivity and improving a burning rate of kerosene. The first passage allows the kerosene to flow upward, preventing the kerosene from being vaporized incompletely because the kerosene is over pressurized.

Abstract: Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.

Abstract: There is provided a pupil tracking device including an active light source, an image sensor and a processing unit. The active light source emits light toward an eyeball alternatively in a first brightness value and a second brightness value. The image sensor captures a first brightness image corresponding to the first brightness value and a second brightness image corresponding to the second brightness value. The processing unit identifies a brightest region at corresponding positions of the first brightness image and the second brightness image as an active light image.

Abstract: A screen protector configured to be disposed on an attaching body on an electronic device in an attaching mode to correspondingly cover a display screen of the electronic device. The screen protector comprises a grating sheet and a first attaching member disposed vertically adjacent to each other side-by-side and coated between two outer cover films. The screen protector is disposed on the attaching body on the electronic device in an attaching mode through the attaching member, so that a viewing zone defined by the grating sheet correspondingly covers the display screen of the electronic device.

Abstract: A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

Abstract: An input system includes a first gesture detection unit and a second gesture detection unit. The first gesture detection unit includes a first light emitting device for emitting a first light beam, a first light sensing device for receiving the first light beam reflected by a first motion trajectory generated by a user and outputting a first image signal, and a first processing unit for processing the first image signal and outputting a first command signal. The second gesture detection unit includes a second light emitting device for emitting a second light beam, a second light sensing device for receiving the second light beam reflected by a second motion trajectory generated by the user and outputting a second image signal, and a second processing unit for processing the second image signal and outputting a second command signal.

Abstract: Recombinant herpes simplex viruses are provided having a modified oncolytic herpes virus genome, wherein the modified herpes virus genome has at least one miRNA target sequence operably linked to a first or to a first and a second copy of an ICP34.5 gene. Also provided are pharmaceutical compositions having such recombinant herpes simplex viruses, as well as methods of using such compositions in the treatment of subjects having cancer.

Abstract: A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually comprise a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. The individual memory cells comprise a capacitor comprising first and second electrodes having a capacitor insulator there-between. The first electrode electrically couples to the first source/drain region. Wordline structures extend elevationally through the insulative material and the memory cells of the vertically-alternating tiers. Individual of the gates that are in different of the memory cell tiers directly electrically couple to individual of the wordline structures. Sense-lines electrically couple to multiple of the second source/drain regions of individual of the transistors. Other embodiments are disclosed.

Abstract: Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.