Abstract: A display device of the present invention includes a light source layer and a sensing unit layer. The light source layer has a display side and a sensing side at the backside of the display side. The light source layer includes a plurality of first light sources generating a first light, and a plurality of second light sources generating a second light. The first light at least partially emits toward the sensing side; the second light at least partially emits toward the display side. A second wavelength of the second light is different from a first wavelength of the first light. The sensing unit layer is disposed at the sensing side of the light source layer. In a sensing mode, the plurality of the first light sources is activated to generate and provide the first light for the sensing unit layer. In a displaying mode, the plurality of the second light sources is activated to generate the second light for displaying an image at the display side.

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Abstract: A display device of the present invention includes a light source layer and a sensing unit layer. The light source layer has a display side and a sensing side at the backside of the display side. The light source layer includes a plurality of first light sources generating a first light, and a plurality of second light sources generating a second light. The first light at least partially emits toward the sensing side; the second light at least partially emits toward the display side. A second wavelength of the second light is different from a first wavelength of the first light. The sensing unit layer is disposed at the sensing side of the light source layer. In a sensing mode, the plurality of the first light sources is activated to generate and provide the first light for the sensing unit layer. In a displaying mode, the plurality of the second light sources is activated to generate the second light for displaying an image at the display side.

Abstract: A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SixGeyOz. A material of the second photo-sensing layer is SivOw. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

Abstract: A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SixGeyOz. A material of the second photo-sensing layer is SivOw. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.

Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Abstract: An optical sensing device includes a thin film transistor disposed on a substrate, an optical sensor, a planar layer, and an organic light emitting diode. The optical sensor includes a metal electrode disposed on a gate dielectric layer of the thin film transistor and connecting to a drain electrode of the thin film transistor, an optical sensing layer disposed on the metal electrode, and a first transparent electrode disposed on the optical sensing layer. The planar layer covers at least a part of the thin film transistor and the optical sensor. The organic light emitting diode is disposed on the planar layer. The anode electrode and the cathode electrode of the organic light emitting diode are electrically coupled to a gate line and a data line respectively.

Abstract: A light sensing device includes a substrate, a control unit and a light sensing unit. The control unit and the light sensing unit are disposed on the substrate. The control unit includes a gate electrode, a gate insulation layer, an oxide semiconductor pattern, a source electrode and a drain electrode. The gate insulation layer is disposed on the gate electrode, and the oxide semiconductor pattern is disposed on the gate insulation layer. The light sensing unit includes a bottom electrode, a light sensing diode and a top electrode. The light sensing diode is disposed on the bottom electrode, and the top electrode is disposed on the light sensing diode. The gate insulation layer partially covers the top electrode, and the gate insulation layer has a first opening partially exposing the bottom electrode. The drain electrode is electrically connected to the bottom electrode via the first opening.

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract: A display includes a backlight source, display panel, first light source, and controller. The display panel includes a sensor array for sensing first reflection light generated from an object reflecting first detection light. The first detection light is generated by the backlight source for locating a coordinate of a projection point of the object on the display panel. The first light source is disposed in a first side of the display panel, for repeatedly transmitting second detection light of different transmitting angles to the object at different time to generate a second reflection light. The second reflection light is sensed by the sensor array. The controller is for performing a corresponding operation according to a transmitting angle of the first light source and the coordinate of the projection point when brightness value of the reflective light is substantially greater than a predict value.

Abstract: A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface.

Abstract: A touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The display medium is sealed between the front substrate and the rear substrate.

Abstract: A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Abstract: An optical touch panel includes a light source unit and a processing unit, wherein the processing unit is for executing a brightness control method. The brightness control method includes steps below. The light source unit emits at a first intensity in a touch control mode. Responding to a switching condition, the touch panel is switched into a scan mode, and the light source unit emits at a second intensity in the scan mode.

Abstract: A touch panel and fabricating method thereof are provided. The patterned transparent conductive layer, disposed on the substrate, includes first electrodes. The photo-sensing layers are disposed on the first electrodes. The first patterned conductive layer includes gate electrodes, scan lines and second electrodes. The gate electrodes and the scan lines are disposed on the substrate. The second electrodes are disposed on the photo-sensing layers. The first electrodes, the photo-sensing layers and the second electrodes constitute photo-sensors. The second patterned conductive layer includes source electrodes and drain electrodes, wherein the gate electrodes, the channel layers, the source electrodes and the drain electrodes constitute read-out transistors and each of the read-out transistors is electrically connected to the corresponding photo-sensor respectively.

Abstract: The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.

Abstract: A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.