Abstract: A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.

Abstract: An optical touch panel includes a light source unit and a processing unit, wherein the processing unit is for executing a brightness control method. The brightness control method includes steps below. The light source unit emits at a first intensity in a touch control mode. Responding to a switching condition, the touch panel is switched into a scan mode, and the light source unit emits at a second intensity in the scan mode.

Abstract: An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: An active device array substrate is provided. First, a substrate having a display area and a sensing area is provided. Then, a first patterned conductor layer is disposed on the display area of the substrate. A gate insulator is disposed on the substrate. A patterned semiconductor layer, a second patterned conductor layer and a patterned photosensitive dielectric layer are disposed on the gate insulator, wherein the second patterned conductor layer includes a source electrode, a drain electrode and a lower electrode, the patterned photosensitive dielectric layer covering the second patterned conductor layer includes an interface protection layer disposed on the source electrode and the drain electrode and a photo-sensing layer disposed on the lower electrode. A passivation layer is then disposed on the substrate. After that, a third patterned conductor layer including a pixel electrode and an upper electrode is disposed on the passivation layer.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm3 to about 4E23 atoms/cm3. The source and the drain are connected with the silicon-rich channel layer.

Abstract: A touch panel and fabricating method thereof are provided. The patterned transparent conductive layer, disposed on the substrate, includes first electrodes. The photo-sensing layers are disposed on the first electrodes. The first patterned conductive layer includes gate electrodes, scan lines and second electrodes. The gate electrodes and the scan lines are disposed on the substrate. The second electrodes are disposed on the photo-sensing layers. The first electrodes, the photo-sensing layers and the second electrodes constitute photo-sensors. The second patterned conductive layer includes source electrodes and drain electrodes, wherein the gate electrodes, the channel layers, the source electrodes and the drain electrodes constitute read-out transistors and each of the read-out transistors is electrically connected to the corresponding photo-sensor respectively.

Abstract: A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.

Abstract: A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.

Abstract: A flat display device integrated with a photovoltaic cell is disclosed. The flat display device includes a first substrate, a second substrate, a display medium layer, a first photovoltaic cell, a connecting layer and a conductive structure. The display medium layer is sealed between the first and second substrates. The first photovoltaic cell is disposed on the first substrate. The connecting layer is disposed on the second substrate and is capable of electrically connecting the first photovoltaic cell to an external circuit. The conductive structure is disposed between the first and second substrates, and is electrically connected with the first photovoltaic cell and the connecting layer.

Abstract: A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface.

Abstract: A stylus, a touch sensitive display system, and a touch sensitive display method are provided. A pressure sensing material is disposed in the stylus for sensing a force exerted by a user and feeding the force back to a touch sensitive display panel, so as to adjust an appearance of a display image (e.g., a width of a line or a gray level of the line) and provide diverse touch sensitive display effects.

Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Abstract: A display includes a backlight source, display panel, first light source, and controller. The display panel includes a sensor array for sensing first reflection light generated from an object reflecting first detection light. The first detection light is generated by the backlight source for locating a coordinate of a projection point of the object on the display panel. The first light source is disposed in a first side of the display panel, for repeatedly transmitting second detection light of different transmitting angles to the object at different time to generate a second reflection light. The second reflection light is sensed by the sensor array. The controller is for performing a corresponding operation according to a transmitting angle of the first light source and the coordinate of the projection point when brightness value of the reflective light is substantially greater than a predict value.

Abstract: A display with a photo sensor is provided, wherein the photo sensor is integrated with an active device array substrate of the display and fabricated through an existing process to reduce the manufacturing cost. A photosensitive silicon-rich dielectric layer or any other photosensitive material layer having similar photosensitive characteristics (for example, a photosensitive semiconductor layer) is adopted to form the photo sensor with a lower electrode and a transparent upper electrode. Thereby, the fill factor of the photo sensor is maximized and noises caused by a backlight source electrode are eliminated.

Abstract: A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

Abstract: A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels.

Abstract: A reflective type touch-sensing display panel including a front substrate, scan lines, data lines, pixel structures, photo-sensors, readout devices, a rear substrate and a reflective display medium is provided. The front substrate has an inner surface. The scan lines and the data lines are on the inner surface of the front substrate and intersected to each other. The pixel structures are disposed on the inner surface of the front substrate, and each pixel structure is electrically connected to one of the scan lines and one of the data lines correspondingly. The photo-sensors are disposed on the inner surface of the front substrate. Each readout device is electrically connected to one of the photo-sensor correspondingly. The rear substrate is disposed opposite to the front substrate. The reflective display medium is sealed between the front substrate and the rear substrate.

Abstract: A display with a photo sensor is provided, wherein the photo sensor is integrated with an active device array substrate of the display and fabricated through an existing process to reduce the manufacturing cost. A photosensitive silicon-rich dielectric layer or any other photosensitive material layer having similar photosensitive characteristics (for example, a photosensitive semiconductor layer) is adopted to form the photo sensor with a lower electrode and a transparent upper electrode. Thereby, the fill factor of the photo sensor is maximized and noises caused by a backlight source electrode are eliminated.

Abstract: An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.