Abstract: A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

Abstract: A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes.

Abstract: A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

Abstract: Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.

Abstract: A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.

Abstract: A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

Abstract: A method for etching features in a low-k dielectric layer disposed below an organic mask is provided by an embodiment of the invention. Features are etched into the low-k dielectric layer through the organic mask. A fluorocarbon layer is deposited on the low-k dielectric layer. The fluorocarbon layer is cured. The organic mask is stripped.

Abstract: An arrangement for quantifying a wafer bow. The arrangement is positioned within a plasma processing system is provided. The arrangement includes a support mechanism for holding a wafer. The arrangement also includes a first set of sensors, which is configured to collect a first set of measurement data for a plurality of data points on the wafer. The first set of measurement data indicates a minimum gap between the first set of sensors and the wafer. The first set of sensors is positioned in a first location, which is outside of a set of process modules of the plasma processing system.

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract: Methods for cleaning an edge of a semiconductor substrate include providing a brush in a housing, the housing provides a volume for holding the brush. A cleaning fluid is inserted into the housing to at least partially fill the volume holding the brush, with the cleaning fluid. The cleaning fluid is removed from the volume of the housing while the cleaning fluid is being inserted. The brush is rotated within the housing while the cleaning fluid is inserted and removed. The edge of the semiconductor substrate is inserted into a slot of the housing. The edge of the semiconductor substrate inserted into the slot is maintained at a distance and for a period of time. The distance is configured such that the brush contacts the edge of the semiconductor substrate but continues to enable rotation of the brush within the housing.

Abstract: Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.

Abstract: A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract: A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radiofrequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract: The various embodiments provide apparatus and methods of removal of unwanted deposits near the bevel edge of substrates to improve process yield. The embodiments provide apparatus and methods with center and edge gas feeds as additional process knobs for selecting a most suitable bevel edge etching processes to push the edge exclusion zone further outward towards the edge of substrates. Further the embodiments provide apparatus and methods with tuning gas(es) to change the etching profile at the bevel edge and using a combination of center and edge gas feeds to flow process and tuning gases into the chamber. Both the usage of tuning gas and location of gas feed(s) affect the etching characteristics at bevel edge. Total gas flow, gap distance between the gas delivery plate and substrate surface, pressure, and types of process gas(es) are also found to affect bevel edge etching profiles.

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.