Abstract: A magnetic device includes a pinned magnetic layer and a free magnetic layer including a first body-centered cubic material and having a variable magnetization vector that has a first stable state and a second stable state. The magnetic device also includes a first non-magnetic layer and a reference layer. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer and includes a second body-centered cubic material that interfaces with the first body-centered cubic material. The magnetic device includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse through the magnetic device switches the variable magnetization vector.

Abstract: A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.

Abstract: A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.

Abstract: The object of the present invention is to provide an improved laparoscopic, surgical instrument, particularly though not exclusively for gynaecology and in particular for Laparoscopic Colposuspension. According to the invention there is provided a laparoscopic, surgical instrument having an elongate shank, a ball head on one end and an eye in the other end. The instrument is such that the ball head is of a larger diameter than that of the elongate shank.

Abstract: A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.

Abstract: A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer.

Abstract: A magnetic memory system includes a superconductor circuit and one or more magnetic memory elements to store data. To write data, a driver circuit in the superconductor circuit generates a magnetic signal for transmission over a superconductor link extending between the superconductor circuit and the magnetic memory element. To read data, a sensing circuit in the superconductor circuit monitors a superconductor link extending from sensing circuit to the magnetic memory element. The magnetic memory element can be a spin-transfer type magnetic memory element.

Abstract: A magnetic device includes a magnetized polarizing layer, a free magnetic layer, and a reference layer. The free magnetic layer forms a first electrode and is separated from the magnetized polarizing layer by a first non-magnetic metal layer. The free magnetic layer has a magnetization vector having a first and second stable state. The reference layer forms a second electrode and is separated from the free-magnetic layer by a second non-magnetic layer. Unipolar current is sourced through the polarizing, free magnetic and reference layers. Switching of the magnetization vector of the free magnetic layer from the first stable state to the second state is initiated by application of a first unipolar current pulse, and switching of the magnetization vector of the free magnetic layer from the second stable state to the first stable state is initiated by application of a second unipolar current pulse.

Abstract: A magnetic memory system includes a superconductor circuit and one or more magnetic memory elements to store data. To write data, a driver circuit in the superconductor circuit generates a magnetic signal for transmission over a superconductor link extending between the superconductor circuit and the magnetic memory element. To read data, a sensing circuit in the superconductor circuit monitors a superconductor link extending from sensing circuit to the magnetic memory element. The magnetic memory element can be a spin-transfer type magnetic memory element.

Abstract: A high speed, low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.

Abstract: A magnetic device includes a pinned magnetic layer having a first fixed magnetization vector with a first fixed magnetization direction. The magnetic device also includes a free magnetic layer having a variable magnetization vector having at least a first stable state and a second stable state. The magnetic device also has a first non-magnetic layer and a reference. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer. The magnetic device also includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse, having either positive or negative polarity and a selected amplitude and duration, through the magnetic device switches the variable magnetization vector.

Abstract: A magnetic device includes a pinned magnetic layer and a free magnetic layer including a first body-centered cubic material and having a variable magnetization vector that has a first stable state and a second stable state. The magnetic device also includes a first non-magnetic layer and a reference layer. The first non-magnetic layer spatially separates the pinned magnetic layer and the free magnetic layer and includes a second body-centered cubic material that interfaces with the first body-centered cubic material. The magnetic device includes a second non-magnetic layer spatially separating the free magnetic layer and the reference magnetic layer. A magnetic tunnel junction, located below the pinned magnetic layer, is formed by the free magnetic layer, the second non-magnetic layer, and the reference magnetic layer. Application of a current pulse through the magnetic device switches the variable magnetization vector.

Abstract: The present invention is a sling system utilizing a rear sling fitting for a long firearm, such as a rifle. Such fittings typically are positioned between the stock and receiver. It presents a fitting body with an aperture to slide over a rifle receiver tube and a connection bar extending from a reverse of the fitting body. A point-type sling attachment may then be attached to the connection bar and be able to slide left and right across the back of the weapon, allowing for quickly adaptable left or right positioning of the weapon. Registration geometry may be added and positioned to further allow interface with weapon geometry and prevent rotation of the fitting during use. The connection bar may be positioned on another component of the weapon, such as the receiver or the stock, should the weapon not have a receiver extension tube. A convertible sling and forward sling mount are also disclosed for cooperative use with the fitting, completing the system.

Abstract: A system for controlling, by a hypervisor, access to physical resources during execution of a virtual machine includes a physical disk and a hypervisor. The physical disk is provided by a computing device and stores at least a portion of a virtual disk. The hypervisor executes on the computing device. The hypervisor allocates, to the virtual disk, an amount of access to the physical disk. The hypervisor determines that a level of utilization of the physical disk has exceeded a threshold. The hypervisor limits, in response to the determination, access by the virtual disk to the physical disk.

Abstract: The present invention is a sling system utilizing a rear sling fitting for a long firearm, such as a rifle. Such fittings typically are positioned between the stock and receiver. It presents a fitting body with an aperture to slide over a rifle receiver tube and a connection bar extending from a reverse of the fitting body. A point-type sling attachment may then be attached to the connection bar and be able to slide left and right across the back of the weapon, allowing for quickly adaptable left or right positioning of the weapon. Registration geometry may be added and positioned to further allow interface with weapon geometry and prevent rotation of the fitting during use. The connection bar may be positioned on another component of the weapon, such as the receiver or the stock, should the weapon not have a receiver extension tube. A convertible sling and forward sling mount are also disclosed for cooperative use with the fitting, completing the system.

Abstract: A system for controlling, by a hypervisor, access to physical resources during execution of a virtual machine includes a physical disk and a hypervisor. The physical disk is provided by a computing device and stores at least a portion of a virtual disk. The hypervisor executes on the computing device. The hypervisor allocates, to the virtual disk, an amount of access to the physical disk. The hypervisor determines that a level of utilization of the physical disk has exceeded a threshold. The hypervisor limits, in response to the determination, access by the virtual disk to the physical disk.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The mapetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially nonzero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: A magnetic memory system includes a superconductor circuit and one or more magnetic memory elements to store data. To write data, a driver circuit in the superconductor circuit generates a magnetic signal for transmission over a superconductor link extending between the superconductor circuit and the magnetic memory element. To read data, a sensing circuit in the superconductor circuit monitors a superconductor link extending from sensing circuit to the magnetic memory element. The magnetic memory element can be a spin-transfer type magnetic memory element.

Abstract: Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultra-fast energy efficient switching. OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer, exhibit improved performance over prior art devices. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy less than 450 fJ and may be reliably observed at room temperature with 0.7 V amplitude pulses of 500 ps duration.