Abstract: A millimeter wave power source module may include N submodules, each of which includes M circuit devices, where M and N are greater than one. Each circuit device may have an output connected to a corresponding radiating element. Each submodule may include a power divider having K input ports and M output ports, where K is a factor of M. Each input port may be coupled to a corresponding receiving element, and each output port may be coupled to an input of a corresponding circuit device. Each submodule may include a heat spreader for removing heat from the circuit devices. The power source module may include a combination RF feed network and heat sink. The combination RF feed network and heat sink may include a wavefront expander to expand the RF input wavefront along at least one axis, and to direct the expanded wavefront to the receiving elements of the N submodules. The combination RF feed network and heat sink may also include a heat exchanger thermally coupled to the heat spreaders of the N submodules.

Abstract: Systems and methods for managing large oil field operations are provided. A oil field map is displayed on a monitor. The oil field map includes oil well objects, oil field facility objects, surface work crew objects, sub-surface work crew objects, safety zones objects, and work equipment rig objects associated with at least one work crew object and having a geographic locater device for tracking its location, each of the objects include a date attribute and a location attribute. The oil field map is customizable by date and has a date selector tool. At least two surface or sub-surface work crew objects are scheduled via a domain-specific software application from which the surface or sub-surface work crew object was extracted. The scheduling of the surface or sub-surface work crew objects is repeated until all surface and sub-surface work crews are scheduled for a date range of interest.

Abstract: A millimeter wave power source module may include N submodules, each of which includes M circuit devices, where M and N are greater than one. Each circuit device may have an output connected to a corresponding radiating element. Each submodule may include a power divider having K input ports and M output ports, where K is a factor of M. Each input port may be coupled to a corresponding receiving element, and each output port may be coupled to an input of a corresponding circuit device. Each submodule may include a heat spreader for removing heat from the circuit devices. The power source module may include a combination RF feed network and heat sink. The combination RF feed network and heat sink may include a wavefront expander to expand the RF input wavefront along at least one axis, and to direct the expanded wavefront to the receiving elements of the N submodules. The combination RF feed network and heat sink may also include a heat exchanger thermally coupled to the heat spreaders of the N submodules.

Abstract: A millimeter wave power source module may include N submodules, each of which includes M circuit devices, where M and N are greater than one. Each circuit device may have an output connected to a corresponding radiating element. Each submodule may include a power divider having K input ports and M output ports, where K is a factor of M. Each input port may be coupled to a corresponding receiving element, and each output port may be coupled to an input of a corresponding circuit device. Each submodule may include a heat spreader for removing heat from the circuit devices. The power source module may include a combination RF feed network and heat sink. The combination RF feed network and heat sink may include a wavefront expander to expand the RF input wavefront along at least one axis, and to direct the expanded wavefront to the receiving elements of the N submodules. The combination RF feed network and heat sink may also include a heat exchanger thermally coupled to the heat spreaders of the N submodules.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The mapetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially nonzero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: A system for optimizing a process of determining a location of data identified by a virtual hard drive address includes a virtual hard drive, a hypervisor, a plurality of chained files and a table. The plurality of chained files includes a first file comprising a delta of a master file and each subsequent file comprising a delta of a previous file in the plurality of chained files. The table enumerates associations between each of a plurality of virtual hard drive addresses with one of the master file and a file in the plurality of chained files. The virtual hard drive stores the master file, the plurality of chained files, and the table. The hypervisor intercepts a request to access data at a virtual hard drive address and identifies, based on the table, a file containing the requested data and responds to the request with access to the requested data.

Abstract: The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.

Abstract: There is disclosed an amplifier module which may include a plurality of N circuit devices, each of which may have at least two stages of amplification. Each circuit device may additionally have a DC input power terminal, a DC power return terminal, and at least one bias voltage terminal. The DC power terminals of the N circuit devices may be connected in series. A bias voltage network may have at least N taps, and each of the N taps may be connected to a bias voltage terminal of a corresponding one of the N circuit devices.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: The present invention generally relates to magnetic devices used in memory and information processing applications, such as giant magneto-resistance (GMR) devices and tunneling magneto-resistance devices. More specifically, the present invention is directed to a single ferromagnetic layer device in which an electrical current is used to control and change magnetic configurations as well as induce high frequency magnetization dynamics. The magnetic layer includes full spin-polarized magnetic material, which may also have non-uniform magnetization. The non-uniform magnetization is achieved by varying the shape or roughness of the magnetic material. The present invention may be used in memory cells, as well as high frequency electronics, such as compact microwave sources, detectors, mixers and phase shifters.

Abstract: The present invention is a sling system utilizing a rear sling fitting for a long firearm, such as a rifle. Such fittings typically are positioned between the stock and receiver. It presents a fitting body with an aperture to slide over a rifle receiver tube and a connection bar extending from a reverse of the fitting body. A point-type sling attachment may then be attached to the connection bar and be able to slide left and right across the back of the weapon, allowing for quickly adaptable left or right positioning of the weapon. Registration geometry may be added and positioned to further allow interface with weapon geometry and prevent rotation of the fitting during use. The connection bar may be positioned on another component of the weapon, such as the receiver or the stock, should the weapon not have a receiver extension tube. A convertible sling and forward sling mount are also disclosed for cooperative use with the fitting, completing the system.

Abstract: The present invention provides compositions and methods featuring microRNA polynucleotides for the diagnosis, treatment or prevention of neoplasia.

Abstract: There is disclosed an amplifier module which may include a plurality of N circuit devices, each of which may have at least two stages of amplification. Each circuit device may additionally have a DC input power terminal, a DC power return terminal, and at least one bias voltage terminal. The DC power terminals of the N circuit devices may be connected in series. A bias voltage network may have at least N taps, and each of the N taps may be connected to a bias voltage terminal of a corresponding one of the N circuit devices.

Abstract: A system for controlling, by a hypervisor, access to physical resources during execution of a virtual machine includes a physical disk and a hypervisor. The physical disk is provided by a computing device and stores at least a portion of a virtual disk. The hypervisor executes on the computing device. The hypervisor allocates, to the virtual disk, an amount of access to the physical disk. The hypervisor determines that a level of utilization of the physical disk has exceeded a threshold. The hypervisor limits, in response to the determination, access by the virtual disk to the physical disk.

Abstract: A system for optimizing a process of determining a location of data identified by a virtual hard drive address includes a virtual hard drive, a hypervisor, a plurality of chained files and a table. The plurality of chained files includes a first file comprising a delta of a master file and each subsequent file comprising a delta of a previous file in the plurality of chained files. The table enumerates associations between each of a plurality of virtual hard drive addresses with one of the master file and a file in the plurality of chained files. The virtual hard drive stores the master file, the plurality of chained files, and the table. The hypervisor intercepts a request to access data at a virtual hard drive address and identifies, based on the table, a file containing the requested data and responds to the request with access to the requested data.

Abstract: There is disclosed a millimeter wave power source module which may include a plurality of submodules. Each submodule may include a further plurality of circuit devices. Each circuit device may have an input coupled to a corresponding receiving element and an output coupled to a corresponding radiating element. Each submodule may also include a heat spreader for removing heat from the plurality of circuit devices. A combination RF feed network and heat sink may include a waveguide horn to couple an RF input wave to the receiving elements on each of the plurality of submodules. The combination RF feed network and heat sink may also include a heat exchanger thermally coupled to the heat spreaders of each of the plurality of submodules.

Abstract: The disclosed embodiments relate to a system and method for receiving multiple channels in a communications receiver. The system includes a first module further including an analog to digital converter for converting an input signal to a first and second digital signal and a first processor for processing the first digital signal, and a second module further including a second processor to process the second digital signal. The method involves receiving an analog signal, converting the analog signal to a first and second digital signal, passing the first digital signal through a first interface, processing the first digital signal to a produce a first plurality of output signals, passing the second digital signal through a second interface, and processing the second digital signal to produce a second plurality of output signals.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially non-zero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.

Abstract: A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer, and the reference layer includes an easy axis perpendicular to the reference layer. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to thereby read out the information stored in the device.