Abstract: A system and method for optimizing maintenance of a remote plasma source comprises recording data from a remote plasma source. The data comprises measurements of one or more operating characteristics of the remote plasma source over a period of time and a plurality of indications of system fault event. The method may include receiving the data; analyzing the data; and determining, based on correlations between the measurements of the one or more operating characteristics and the plurality of system fault events, a threshold of an operating point. The operating point may comprise the measurements of the one or more operating characteristics at a particular time. The threshold signifies a pending system fault event is probable to a defined degree of confidence within a specified window of time. The system provides a notification to perform preventative maintenance on the remote plasma source.

Abstract: This disclosure describes systems, methods, and apparatus for making and using a single-turn coil on a remote plasma source to reduce capacitive coupling between the coil and a plasma, and/or a laminated chamber wall including at least one conductive layer that reduces capacitive coupling between the coil and the plasma. Where a laminated chamber wall is used, the coil can either be a single or multi-turn coil. Additive processes can be used to fuse or bond the conductive layer(s) to lower layers (e.g., dielectric layers) as well as to fuse or bond a final layer (e.g., dielectric) to an outermost conductive layer. Further, a method is disclosed wherein a conductive layer within the lamination is biased during plasma ignition and then the bias is reduced after ignition.

Abstract: Disclosed are power supply systems and methods of operating the same. An exemplary power supply system includes a primary rectifier configured to rectify an AC voltage to produce a bus voltage on a DC bus and a voltage monitor configured to monitor the AC voltage. A capacitor is switchably coupled to the DC bus via a switch and a charger is configured to charge the capacitor with power from the DC bus. A switch controller is configured to close, in response to the voltage monitor indicating a sag in at least one phase of the AC voltage, the switch to enable the capacitor to discharge to the DC bus.

Abstract: Disclosed are power supply systems and methods of operating the same. An exemplary power supply system includes a primary rectifier configured to rectify an AC voltage to produce a bus voltage on a DC bus and a voltage monitor configured to monitor the AC voltage. A capacitor is switchably coupled to the DC bus via a switch and a charger is configured to charge the capacitor with power from the DC bus. A switch controller is configured to close, in response to the voltage monitor indicating a sag in at least one phase of the AC voltage, the switch to enable the capacitor to discharge to the DC bus.

Abstract: This disclosure describes systems, methods, and apparatus for making and using a single-turn coil on a remote plasma source to reduce capacitive coupling between the coil and a plasma, and/or a laminated chamber wall including at least one conductive layer that reduces capacitive coupling between the coil and the plasma. Where a laminated chamber wall is used, the coil can either be a single or multi-turn coil. Additive processes can be used to fuse or bond the conductive layer(s) to lower layers (e.g., dielectric layers) as well as to fuse or bond a final layer (e.g., dielectric) to an outermost conductive layer. Further, a method is disclosed wherein a conductive layer within the lamination is biased during plasma ignition and then the bias is reduced after ignition.

Abstract: A system and method for optimizing maintenance of a remote plasma source comprises recording data from a remote plasma source. The data comprises measurements of one or more operating characteristics of the remote plasma source over a period of time and a plurality of indications of system fault event. The method may include receiving the data; analyzing the data; and determining, based on correlations between the measurements of the one or more operating characteristics and the plurality of system fault events, a threshold of an operating point. The operating point may comprise the measurements of the one or more operating characteristics at a particular time. The threshold signifies a pending system fault event is probable to a defined degree of confidence within a specified window of time. The system provides a notification to perform preventative maintenance on the remote plasma source.

Abstract: A semiconductor package for mounting multiple field effect transistors (FETs) is disclosed. The package includes a drain conductor between each FET's drain connection point and a drain terminal connector on the semiconductor package; a source conductor between each FET's source connection point and a source terminal connector of the source conductor on the semiconductor package, the source conductor containing the common inductance; a dielectric substantially overlaying said source conductor; a gate conductor on the dielectric substantially overlaying the source conductor; and said gate conductor, said dielectric and said source conductor forming a transformer, the transformer creating voltage in the gate conductor which almost exactly cancels voltage in said source conductor.

Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.

Abstract: In one aspect of the invention is a gas feed for injecting gas into a plasma-processing chamber that reduces the speed at which the gas interacts with the plasma discharge, so enhancing the stability of the plasma and the production of reaction products. In one embodiment, the gas feed comprises a gas speed reducer having apertures along its wall through which gas is distributed into the plasma chamber at a tangent to the chamber walls. In another embodiment, the gas feed comprises a gas speed reducer, which is made up of one or more channels such that, when traveling through the channels, the input and the output holes of the channels can only be connected by a broken line. In yet another embodiment, the gas speed reducer has a plurality of perforated sheaths, such that holes on one perforated sheath are not aligned with holes on another perforated sheath.

Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.

Abstract: Embodiments of the inventive technology may be a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline in a system with a substrate support adapted to support a substrate with a process surface that defines a process surface plane that is parallel the form centerline.

Abstract: An apparatus includes a vacuum chamber, an electrical transformer that surrounds the vacuum chamber to induce an electromagnetic field within the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum chamber. The transformer includes a primary winding and a plasma loop coupled to the vacuum chamber to perform as a secondary winding. The ignition circuit is coupled to an ignition core section of the vacuum chamber to ignite the vacuum chamber.

Abstract: There is provided by this invention a unique ion source for depositing thin films on a substrate in a vacuum chamber that neutralizes the positive electric charges that develop on the substrate and vacuum chamber apparatus that may cause arcing and degradation of the film deposition. A power supply with a reversing voltage waveform is utilized that neutralizes the electric charge on the substrate and the vacuum chamber apparatus. A power supply applies an ac voltage to the anode of the ion source and a rectified ac voltage to the cathode. The ground terminal of the power supply is connected to the vacuum chamber. The rectifying circuit is comprised of zener diodes that clamp the voltage in the circuit from spikes during plasma ignition and a capacitor connected to negatively bias the cathode when there is no plasma discharge.

Abstract: The reaction rate of a feed gas flowed into a plasma chamber is controlled. In one embodiment a pulsed power supply repeatedly applies a high power pulse to the plasma chamber to increase the reaction rate of plasma within the chamber, and applies a low power pulse between applications of the high power pulses.

Abstract: A plasma discharge device is provided having features for enhanced thermal management and protection of dielectric materials in the device. The invention generally comprises a plasma confinement chamber constructed at least in part of dielectric materials, with a cooling instrument disposed in contact with the outer dielectric surfaces of the chamber for substantially uniform heat extraction. The cooling instrument may be embedded within an encapsulating material that enhances the uniformity of heat extraction from a dielectric plasma chamber. By improving the uniformity of heat extraction from the dielectric chamber of a plasma discharge device, the invention permits reliable operation of a plasma discharge device at significantly improved power levels.

Abstract: In one aspect of the invention is a method to construct plasma chambers with improved wall resistance to deterioration. In one embodiment of the invention, a chamber is made of an aluminum alloy having low concentrations of elements that form non-soluble, intermetallic particles to address coating/substrate issues, has swaged-in cooling tubes to reduce thermal stress by improving thermal resistance, and has a plurality of dielectric gaps to decrease ion bombardment.

Abstract: In one aspect of the invention is a method to create a vacuum seal with extended lifetime to form a dielectric break in a vacuum chamber. The method includes the use of an elastic dielectric seal to form a high vacuum seal. It also includes the use of different means to protect the vacuum seal from direct exposure to the plasma and to reactive gases present inside the plasma chamber. Furthermore, it includes the use of elements to ensure a proper compression of the elastic seal, and to avoid its expansion or contraction when the pressures on both sides of the seal are different.

Abstract: Apparatus to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.

Abstract: According to one embodiment, an apparatus is described. An apparatus includes a vacuum chamber, an electrical transformer coupled to the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum chamber. The transformer includes a primary winding and a magnetic core. In addition, the transformer includes a secondary winding, to which the circuit used to ignite the vacuum chamber is coupled. The ignition circuit is used to establish a controlled capacitive discharge that is used to ignite the vacuum chamber.

Abstract: Systems to achieve both more uniform and particle free DLC deposition is disclosed which automatically cycles between modes to effect automatic removal of carbon-based buildups or which provides barriers to achieve proper gas flow involves differing circuitry and design parameter options. One ion source may be used in two different modes whether for DLC deposition or not through automatic control of gas flow types and rates and through the control of the power applied to achieve maximum throughput or other desired processing goals. Arcing can be controlled and even permitted to optimize the overall results achieved.