Inductively coupled plasma system with internal coil

Abstract

Embodiments of the inventive technology may be a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline in a system with a substrate support adapted to support a substrate with a process surface that defines a process surface plane that is parallel the form centerline.

Description

BACKGROUND OF THE INVENTIVE TECHNOLOGY

Generally, this inventive technology relates to an inductively coupled plasma system. More specifically, this inventive technology relates to an inductively coupled plasma system in which an internal coil established in a dielectric form that itself is positioned in a process chamber either generates or enhances a plasma.

It has long been desired to process a substrate surface (e.g., coat a glass windshield) that has two rather long dimensions (e.g., where each width and length is greater than one meter). Where only one substrate dimension is long (e.g., where its surface to be processed is only three inches wide but two meters long), processing of the entire substrate process surface does not require a two meter plasma, as a three inch long plasma can be used to process the substrate as it is continuously fed alongside the plasma such that the entire length is processed. However, of course, without a long plasma, this method cannot be used to process a substrate surface whose width and length are each long, such as a flat panel that has significant length and width.

Not only are long inductively coupled plasma sources hard to find or non-existent, but alternative methods designed to address the above-referenced problem of processing substrates with long and wide process surface may involve certain mechanical problems, including designing or adapting a process chamber in order to install a plasma source with external coils. Additionally, it may be very difficult to position such a plasma source sufficiently close to the substrate.

Other attempted solutions to the large processing surface problem include using a capacitively coupled plasma system. However, in some such systems, sputtering of the electrodes may be undesired and may contaminate the substrate. Also, in chemically reactive plasmas, electrodes may oxidize and capacitive coupling changes as a result, leading to an unstable process.

SUMMARY OF THE INVENTION

The present inventive technology includes a variety of aspects which may be selected in different combinations based upon the particular application or needs to be addressed. In one basic form, the inventive technology discloses a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline; the system may further include a substrate support adapted to support a substrate with a process surface that itself defines a process surface plane that is parallel to the form centerline.

One of the broad objectives of embodiments of the inventive technology is to allow for the processing of substrate surfaces having long width and length while avoiding problems associated with other types of plasma systems (e.g., inductively coupled plasma systems). Indeed, certain embodiments of the inventive technology may be used to achieve a long, uniform inductively coupled plasma (as but one exemplary range, the plasma could be 3-9 feet in length).

Another broad goal of those embodiments of the inventive technology that include a magnetron (or perhaps another type of plasma element such as an ion source) is to enable a reduction in the voltage requirements of the magnetron or ion source by providing a coil that can enhance the plasma generated by the magnetron or ion source, or perhaps by providing a coil that generates its own plasma.

Another broad goal of the inventive technology is improvement in systems able to treat moving glass or other substrates.

Naturally, further objects of the invention are disclosed throughout other areas of the specification and claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 2 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 3 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 4 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 5 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 6 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 7 shows an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 8 shows a cross-section of an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 9 shows a view of a portion of an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 10 shows two dielectric forms and their internal coil as may appear in an inductively coupled plasma system in accordance with at least one embodiment of the inventive technology.

FIG. 11 shows a rotating drum batch coating system as may appear be incorporated in at least one embodiment of the inventive technology.

FIG. 12 shows cross-sections of dielectric forms and different coil types as may appear in certain embodiments of the inventive technology.

FIG. 13 shows cross-sections of dielectric forms and different coil types as may appear in certain embodiments of the inventive technology.

FIG. 14 shows cross-sections of dielectric forms as may appear in certain embodiments of the inventive technology.

FIG. 15 shows a cross-section of a magnetron as may be incorporated in at least one embodiment of the inventive technology.

FIG. 16 shows a linear or single beam ion source as may be incorporated in at least one embodiment of the inventive technology.

FIG. 17 shows a schematic of an ion beam source as may be applied, for substrate pre- and post-treatment in at least one embodiment of the inventive technology.

FIG. 18 shows a schematic of an ion beam source as may be applied for direct deposition on a substrate in at least one embodiment of the inventive technology.

FIG. 19 shows a schematic of an ion beam source as may be applied for ion beam assisted deposition on a substrate in at least one embodiment of the inventive technology.

FIG. 20 shows a squirrel cage type faraday shield.

FIG. 21 shows a side schematic view of elements of a web roll coater in which the inventive technology may find application.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

As mentioned earlier, the present invention includes a variety of aspects; all may be combined in different ways. The following descriptions are provided to list elements and describe some of the embodiments of the present invention. These elements are listed with initial embodiments, however it should be understood that they may be combined in any manner and in any number to create additional embodiments. The variously described examples and preferred embodiments should not be construed to limit the present invention to only the explicitly described systems, techniques, and applications. Further, this description should be understood to support and encompass descriptions and claims of all the various embodiments, systems, techniques, methods, devices, and applications with any number of the disclosed elements, with each element alone, and also with any and all various permutations and combinations of all elements in this or any subsequent application.

At least one embodiment of the inventive technology may be a plasma system 1 that comprises a coil 2 powered by a power source 3 (including but not limited to an RF power source 4) so as to generate or enhance a plasma 5 in a process chamber 6; and a dielectric form 7 that itself is established within the process chamber, has two ends 8 supported by at least one support member 9 at two support sites 10 (e.g., where the dielectric form contacts the support member(s)), and defines an internal volume 11. In such system, at least a portion of the coil is established in the internal volume. Advantages of such a system include but are not limited to the ability to process substrate surfaces having long width and length (e.g., each over 1 meter) while avoiding problems associated with other types of plasma source. Another potential advantage, in addition to those discussed elsewhere, is an ability to process substrates in pure oxygen at “magnetron” pressures of three to ten Torr, where desired.

At least one embodiment of the inventive technology may relate in particular to only those embodiments that process a substrate 12 in some manner, whether to etch, clean, preheat, or deposit material on that substrate. Such system may comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; a dielectric form that defines both an internal volume and a form centerline 13; and a substrate support 14 adapted to support a substrate in the process chamber, where the substrate has a process surface 15 defining a process surface plane 16, where at least a portion of the coil is established in the internal volume, and where the form centerline is substantially parallel the process surface plane. Advantages of such a system include but are not limited to the ability to process substrate surfaces having long width and length (e.g., each over 1 meter) while avoiding problems associated with other types of plasma source. Another potential advantage, in addition to those discussed elsewhere, is an ability to process substrates in pure oxygen at “magnetron” pressures of three to ten Torr, where desired. What follows describes aspects of the inventive technology as may relate to any of its primary manifestations (two of which are described above), unless stated otherwise.

The power source 3, whether powering the coil, any magnetron that may exist, or 25 both, may be an AC power source (e.g., an AC power source), such as a RF (radio frequency) generator, and, as but one range, may operate at between 350 KHz to 15 MHz. For reasons related to high impedance of the coil and high capacitance to the ground, particularly good results may be found at a relatively low frequency of 400 kHz. In certain instances, the power source may be DC. Certain embodiments may include an impedance matching network 18 (e.g., that may be connected to an RF power source) in order that the RF power remains as constant as possible during the process, thereby assuring process quality and consistency. The substrate support is any structure—even merely a process chamber floor, as but one example—that is capable of supporting a substrate as intended (whether horizontally, vertically, or in other orientation). It is also noted that the term plasma system is used to reference any type of electrical system in which a plasma is used to achieve a desired effect (including but not limited to processing a substrate surface in an intended manner).

The coil itself may be an induction coil with a plurality of windings. In preferred embodiments, it is operable as a solenoid to inductively couple energy through the dielectric form to a gas in order to generate and sustain, or merely enhance, a plasma of ionized gas particles. It may be a longitudinal coil 19 (a term that includes a coil that has windings that each define a coil centerline that is substantially parallel to the centerline of the dielectric form), or, as but one other example, it may be what will be deemed a transverse coil 20 (see FIGS. 12B and 13B). A transverse coil, like a longitudinal coil, also involves a plurality of windings, but, unlike the standard longitudinal coil, more than one of such windings defines a centerline that is not substantially parallel with the centerline of the dielectric form in which the coil is established. Indeed, such a centerline of such winding in a transverse coil may be substantially orthogonal to the centerline of the dielectric form in which the coil is established. It should be understood that the term centerline as used herein can not only be straight, but also curved.

A transverse coil may be particularly suited where it is desired that the solenoid includes windings that each run along the length of the dielectric form. In those embodiments having a longitudinal coil, the magnetic field 63 established by the coil may indeed be relatively small in the plasma (see FIG. 13A), while in embodiments having transverse coil, the magnetic field 64 may be comparatively stronger in the plasma (see FIG. 13B). The coil is conductive (as but one example it may be copper wire 142), and may be hollow so that water may flow through to enhance cooling of the dielectric form.

The dielectric form includes but is not limited to a dielectric tube 21 (where the cross-section is circular 60, oval 61, or perhaps even polygonal 62, as but three of many possible examples). It may be made from any dielectric material, including but not limited to glass or quartz. It may have any of a multitude of outer diameters (3″-5″, as but one exemplary range). It may be established so as to provide fluidic communication through the form (e.g., such that a gas may pass through one end of the form, to the other end, and through the other end). In certain embodiments, it may extend along a dimension (e.g., a depth, width, height, or length) of the process chamber. The dielectric form may, inter alia, eliminate exposed metal, and allow plasma generation/maintenance in reactive gases.

The two ends of the dielectric form may be supported by at least one support member at two support sites. Such support member may be a wall(s) 22 of the process chamber itself, or a structure 23 established within the process chamber. Such support may be provided either directly (e.g., where the ends themselves are attached to the at least one support member at the two support sites as shown in FIG. 1), or indirectly, where a part(s) of the dielectric form other than the ends is attached to the at least one support member at the two support sites but the rigidness of the form itself effects support of its ends (see, e.g., FIG. 4). Where the two ends of the dielectric form are supported by two support members (e.g., where the support sites are on opposing or merely different walls of the process chamber), the dielectric form will likely be substantially straight (although it need not be), and substantially longitudinal (where the length is at least three times the cross-sectional dimension), as shown in FIG. 1. Where the two ends of the dielectric form are supported—either indirectly or directly—by one support member (e.g., the two support sites are on the same wall of the process chamber), the dielectric form will likely be curved, as shown in FIG. 6, whether smoothly curved or sharply curved. It should be understood that the term walls is intended to include not only planar boundaries but also those that are curved. It should also be understood that a capsule-like chamber having a smoothly curving inner surface is deemed to have two opposing walls.

In various embodiments, there may be established within the process chamber one or more dielectric forms, each having a coil established therein (see, e.g., FIGS. 1-7). In embodiments with two dielectric forms (e.g., as shown in FIG. 10), one coil may be deemed a first coil 24, its dielectric form deemed a first dielectric form 25, its internal volume deemed a first internal volume 26, and its generated magnetic field deemed a first magnetic field 27 in a first longitudinal direction 28, while a second dielectric form 29 may be established parallel the first dielectric form and define a second internal volume 30 in which at least a portion of a second coil 31 may be established to create a second magnetic field 32 in a direction 160 that 30 is opposite the first longitudinal direction. Such an multi-coil arrangement may effect a looped magnetic field 33 and a reduction in stray magnetic field. Either a longitudinal or transverse coil may be used, in various embodiments, to achieve a plasma and resultant treatment process as intended.

The internal volume defined by the dielectric form may be at substantially atmospheric pressure. It may be an internal cavity 34, as where it is filled with only atmospheric or other gases, or perhaps even at vacuum. The internal volume may include potting compound 35 (e.g., RTV, room temperature vulcanizing silicone potting compound and/or cooling fluid 36 such as oil ), perhaps for enhanced cooling. Additionally perhaps, or instead, the dielectric form may include some type of UV protection; such may be provided by a known type of UV protective coating on the dielectric form, or by a material such as a certain type of quartz. As is known, UV rays from the plasma can lead to the generation of ozone, which can degrade plastic or RTV potting compound.

At least one embodiment of the invention may focus on the use of an internal coil in order to enhance a deposition process, whether such deposition is effected by a magnetron 37, ion source 38 or by other process, including but not limited to chemical vapor deposition (as in plasma enhanced chemical vapor deposition). In plasma deposition process, the energized coil creates or enhances a plasma (e.g., one that is often preferably high density and/or uniform) to bombard the surface of a target 71, leading to deposition on the substrate's process surface 15. Further, it should be pointed out that the deposition process may indeed also be reactive sputtering, in which a reactive gas that reacts with the sputtered material is introduced into the process chamber.

Where a magnetron is used, the effect to which the internal coil assists the deposition process may directly relate to its closeness to the magnetron—the closer the two are, the greater the deposition enhancement effect caused by the internal coil, and, perhaps, the less voltage required by magnetron to achieve an intended deposition process. For a general understanding of types of magnetrons that may be used, including balanced and unbalanced magnetrons, and of magnetron sputtering, reference is made to www.pvd-coatings.co.uk/theory-of-pvd-coatings-magnetron.htm, and www.pvd-coatings.co.uk/theory-of-pvd-coatings-magnetron-sputtering.htm, each as appearing on Jul. 11, 2006, and each hereby incorporated herein. It is also of note that the magnetic field created by the often DC-powered magnetron need not reach the substrate, although indeed it may.

An ion source 38, when used, may be used instead of (see, e.g., FIG. 6), or in addition to, a magnetron. A few examples of ion sources that may be used include those shown in FIGS. 17-19. It may be flange, remote or other mount, and may clean, etch, deposit material, etc. so as to treat a substrate. Certain embodiments, e.g., linear or single-cell ion beam sources, may involve gas flow 81 through the ion source between the anode 82 and cathode, and the application, with power supply 110, of a positive voltage to the anode 82, that, in combination with the high magnetic field between the tips of the internal and external cathodes, generates a plasma 85. An ion beam 84 is created when ions from the plasma 85 are repelled by the anode electric field. FIG. 16 shows relative positions of anode 82, the gas flow 81, permanent magnet 80, the plasma 85 and ion beams 84. Of course, such ion sources may incorporate some sort of electron emitter device (also known as a neutralizer), to supply electrons to the substrate surface, as taught in “Handbook of Ion Beam Processing Technology”, edited by Jerome J. Cuomo, Stephen M. Rossnagl and Harold R. Kaufman (Noyes Publications), hereby incorporated herein. The electron emitter frequently doubles as a neutralization device, or a second emitter sometimes is used specifically for neutralization. In certain embodiments, the plasma as generated by the inventive technology's dielectric form with internal coil could act as an electron emitter or neutralizer for the ion source. It is of note that if a plasma system includes the dielectric form with internal coil, then the system may be properly referred to as an inductively coupled plasma system, even where the system includes plasma generators that may be more properly termed capacitively coupling.

It is also noted that some closed-drift ion sources, such as the LIS series and MCIS series manufactured by Advanced Energy Industries of Fort Collins, Colo., do not require an electron emitter for their operation. Additionally, the ion beams that may be used in the inventive technology include, but are not limited to, the round and linear ion sources disclosed in http://www.advanced-energy.com/upload/SL-ION-230-02.pdf, as appearing on Jul. 11, 2006, said webpages also incorporated herein. Various well-known ion beam source applications, as shown in FIGS. 17-19, may be incorporated as part of the inventive technology.

Embodiments of the inventive technology may involve use of an ion beam in certain processes (ion beam sources that may be used include but are not limited to those shown in FIGS. 17-19). The inventive technology may involve an ion source 90, gases 91 (e.g., Ar and oxygen), auxiliary gases 94, ion beams 92 and a substrate 93 as shown in FIG. 17, in a substrate pre- and post-treatment application. It may involve an ion source 100, gases and precursors 101, ion beams 102, auxiliary gases and precursors 105, and a thin film/overcoat 103 on a substrate 104 as shown in FIG. 18, in a direct deposition process. And, in other embodiments using an ion source, the inventive technology may involve a magnetron 170, an ion source 113, gases 112, auxiliary gases 114, to sputter material 111 that thereafter becomes deposited material 116 on substrate 115 as shown in FIG. 19, in an ion beam-assisted deposition process.

It is of note that in systems involving a conductive target (e.g., a conductive target of a magnetron), such target may be biased using known bias systems 47 so as to enhance the process (e.g., by increasing the ion bombardment rate). Instead, or in addition, a bias system (e.g., a RF bias system 48), which is well known per se, may operate on a conductive substrate 130 so as to enhance the process, whether it be cleaning, preheating, etching, or deposition.

In embodiments that are designed for deposition (e.g., that include a magnetron, a chemical vapor deposition element 49, or include some other type of deposition element), or that are designed for preheating, etching or cleaning, or indeed any other type of processing of a substrate, there may, as mentioned, be provided a substrate support element. It is also of note that there may be provided some type of continuous feed element 53 (e.g., a conveyor belt system, perhaps with rollers as shown) that is operable to move a substrate responsive thereto (e.g., a substrate lying on top of the belt) at a controlled speed so that a plasma system sized to treat only a portion of the substrate at one time may treat the entire substrate as desired. In some embodiments, the substrate may be fed through a sealed lock 50 (a type of slot, perhaps) so as not to affect the pressure in the process chamber, as the area from which the substrate is fed will typically be at a higher pressure. In other embodiments, the need for a well sealed lock may be eliminated through the use of a pre-chamber 51 (e.g., as shown in FIG. 4) that is at the same pressure as that of the process chamber.

In those embodiments that include a magnetron, the dielectric form and the magnetron may be placed sufficiently close such that they together result in only one plasma (see, e.g., FIG. 3); in such case, the internal coil may be said to enhance a plasma (which may, but need not, be generated solely by the magnetron). In other embodiments, they may be placed sufficiently far from one another such that they each generate their own plasma (see, e.g., FIG. 2). Especially in those embodiments where only one plasma is generated (as where, e.g., the internal coil of the dielectric form enhances a plasma that may be generated by the magnetron), the voltage required by the magnetron may be reduced; however, magnetron voltage requirements may also be reduced in those embodiments where two plasmas are generated. Distances between and relative orientations of the magnetron and the dielectric form(s) necessary to effect plasma generation as intended may depend highly on several factors and may be most easily determined iteratively by trial and error. Such would be easily within the ken of an ordinary artisan.

As in FIG. 7, in embodiments where the plasma is generated so as to enhance chemical vapor deposition, there may be established a chemical vapor deposition element 49. Such element may include all componentry, gases, etc. required in known chemical vapor deposition processes.

As alluded to above, the inventive technology may not only be used for deposition and/or substrate preheating, but also for substrate cleaning and/or etching. In such embodiments, there might not be provided a magnetron or other type of deposition element.

In particular embodiments, at least a portion of the space within the process chamber (e.g., at least that space other than that occupied by the dielectric form(s)) may be held at a vacuum (a term deemed to characterize, e.g., even those situations where a process gas (e.g., a non-reactive gas such as Argon) is introduced into the chamber in appropriate amounts through a gas inlet 65, such that a perfect vacuum does not exist).

Deposition type plasma systems may be a rotating drum batch coating system 52 (see article “A High Rate Reactive Sputtering Process For Batch, In-Line, or Roll Coaters”, by Boling et al., hereby incorporated herein), may involve a continuous feed element 53 (e.g., so as to better coat, etch, preheat or clean large flat panel substrates), or even may involve a substrate that is held stationary during the process (e.g., cleaning, etching, preheating or deposition). In any process type, whether continuous or not, the dielectric form may be substantially horizontal, vertical, off-horizontal, off-vertical, or have other orientation. The dielectric form may have any orientation relative to the substrate, as indeed it may be above the substrate, below the substrate, to the side of the substrate, in front of the substrate, behind the substrate, etc., depending on the particular demands of the processing application. The substrate itself may also be substantially horizontal, vertical, off-horizontal, off-vertical, or have other orientation. Continuous drum rotation systems may involve a pump 120, multiple substrates 121 and targets 122, plasma 123, active gas 124, a microwave plasma applicator 125, and an optical gas controller 127 in a rotating drum system as shown in FIG. 11.

Embodiments of the inventive technology may also find application in web coaters (e.g., web coaters, web roll coaters, or other type). In such embodiments (e.g., as shown in FIG. 21), typically the dielectric form and its internal coil would be established substantially parallel with the central, longitudinal axis 180 of the drum 152. One example of the many types of web coaters in which the inventive technology may find application is as shown in FIG. 21. Such a web coater may include left side load roll shaft 150, a right side load roll shaft 151, a dielectric form with internal coil 154, and/or a magnetron 153. Of course, other processing devices such as a plasma gun and an evaporation source may be incorporated. Yet another example of a web coater in which the inventive technology may find application is as shown on page 1975 of Affinito et al.; Ultrahigh rate, wide area, plasma polymerized films, said reference hereby incorporated herein by reference. Incorporation of the inventive technology into such systems may enhance the processing of plastics (e.g., perhaps to be used in bagging foods), or paper (e.g., as a counterfeiting measure in the manufacture of paper money), as but two of many examples.

Particular embodiments may include a faraday shield 54 (see, e.g., FIG. 20) established within the dielectric form, e.g., substantially between the coil and an interior surface 55 of the dielectric form. One type of such a faraday shield, as shown in FIG. 20, is the squirrel type faraday shield, although indeed other shield types may be used. A variety of materials may be used for the shield's “tube”, including but not limited to conductive materials such as copper. The Faraday Shield may remove or reduce capacitive coupling between the beginning and end of a coil that otherwise might be found due to the potential difference between the ends of the coil.

Embodiments of the inventive technology may be particularly suited for process surfaces (surfaces to be processed, e.g., via etching, cleaning, preheating or deposition) that are substantially flat panels (e.g., glass windshields, plastic panels) having at least one long dimension. In processing such panels, a continuous feed element may feed the substrate such that the entire process surface may be treated by the plasma during a processing event. In such systems, often a plasma will be generated such that a relatively thin width strip can be treated at a time; upon moving the substrate along such plasma (e.g., from one end to the other, along its length), perhaps with a type of continuous feed element 53, the entire surface as intended may be treated. Such panel may first be established in a pre-chamber 51 at vacuum and subsequently fed under the plasma; instead, there may be a type of sealed lock 50 through which the substrate may be fed into the process chamber for treatment. Some systems may involve a process chamber large enough to accommodate the entire substrate from the beginning of the process, through a feeding event, to the end of the process.

It is of note that certain measures may be taken in order to preclude problems related to thermal expansion along a longitudinal axis of the dielectric form during plasma processing. Such measures may simply involve provision of an ability of the form to move (e.g., slide) relative to the at least one support, at the support sites. Such may be achieved by well known techniques that provide a slideable seal 59 around dielectric form at the support sites. It is of note, for purposes of clarity, that not every occurrence of every element in the figures is referenced (or “called out”) with that number used in reference to it.

The reader should be aware that the specific discussion may not explicitly describe all embodiments possible; many alternatives are implicit. The specification may not explicitly show how each feature or element can actually be representative of a broader function or of a great variety of alternative or equivalent elements; these are implicitly included in this disclosure.

It should also be understood that a variety of changes may be made without departing from the essence of the invention. Such changes are also implicitly included in the description and still fall within the scope of this invention.

Additionally, when used or implied, the term element is to be understood as encompassing individual as well as plural structures that may or may not be physically connected. This disclosure should be understood to encompass each such variation, be it a variation of an embodiment of any apparatus embodiment, a method or process embodiment, or even merely a variation of any element of these.

Claims

1. A plasma system, comprising:

a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and

a dielectric form: established within said process chamber, that has two ends supported by at least one support member at two support sites, and that defines an internal volume;

wherein at least a portion of said coil is established in said internal volume.

2. A plasma system as described in claim 1 wherein said coil comprises a longitudinal coil.

3. A plasma system as described in claim 1 wherein said coil comprises a transverse coil.

4. A plasma system as described in claim 1 wherein said coil is a first coil, said dielectric form is a first dielectric form, said internal volume is a first internal volume, and said first coil establishes a first magnetic field in a first direction, and further comprising a second dielectric form established parallel said first dielectric form and defining a second internal volume in which at least a portion of a second coil is established to create a second magnetic field in a direction that is opposite said first direction.

5. A plasma system as described in claim 1 wherein said at least one support member comprises two support members.

6. A plasma system as described in claim 1 wherein said at least one support member comprises at least one process chamber wall.

7. A plasma system as described in claim 1 wherein said dielectric form is a substantially straight dielectric form.

8. A plasma system as described in claim 1 further comprising a magnetron.

9. A plasma system as described in claim 8 wherein said coil and said magnetron together generate only one plasma.

10. A plasma system as described in claim 1 further comprising a chemical vapor deposition element.

11. A plasma system as described in claim 1 further comprising an ion source.

12. A plasma system as described in claim 1 wherein said dielectric form defines a form centerline and further comprising a substrate that has a process surface defining a process surface plane and wherein said form centerline is substantially parallel said process surface plane.

13. A plasma system as described in claim 1 wherein said dielectric form is a substantially horizontal dielectric form.

14. A plasma system as described in claim 1 wherein said coil defines a coil centerline and said dielectric form defines a form centerline that is substantially parallel said coil centerline.

15. A plasma system as described in claim 1 further comprising a substrate established for processing by said plasma system.

16. A plasma system, comprising:

a coil powered by a power source so as to generate or enhance a plasma in a process chamber;

a dielectric form that defines an internal volume and a form centerline; and

a substrate support adapted to support a substrate in said process chamber,

wherein said substrate has a process surface defining a process surface plane,

wherein at least a portion of said coil is established in said internal volume, and

wherein said form centerline is substantially parallel said process surface plane.

17. A plasma system as described in claim 16 wherein said coil comprises a longitudinal coil.

18. A plasma system as described in claim 16 wherein said coil is a first coil, said dielectric form is a first dielectric form, said internal volume is a first internal volume, and said first coil establishes a first magnetic field in a first direction, and further comprising a second dielectric form established parallel said first dielectric form and defining a second internal volume in which at least a portion of a second coil is established to create a second magnetic field in a direction that is opposite said first direction.

19. A plasma system as described in claim 16 wherein said form centerline is substantially straight.

20. A plasma system as described in claim 16 wherein said dielectric form has two ends supported by at least one support member at two support sites.

21. A plasma system as described in claim 16 further comprising a magnetron.

22. A plasma system as described in claim 16 wherein said dielectric form defines a form centerline and further comprising a substrate that has a process surface defining a process surface plane that is substantially parallel said form centerline.

23. A plasma system as described in claim 16 wherein said plasma system is a web coater.