Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Abstract: An integrated circuit has a circuit part and a trimmable resistor, the resistance whereof may be modified by Joule effect. The trimmable resistor has first and second connection terminals coupled to the circuit part, and an intermediate terminal that divides the trimmable resistor into two portions. The first and the second connection terminals and the intermediate terminal are coupled to respective pads configured to receive electrical quantities designed to cause, in use, a respective trimming current flow in each portion. In this way, a substantially zero voltage drop is maintained between the first and second connection terminals while current is flowing in the resistor to change an electrical characteristic of the resistor, such as resistance or thermal coefficient.

Abstract: A sensor of volatile substances including: a sensitive layer, of a sensitive material that is permeable to a volatile substance and has an electrical permittivity depending upon a concentration of the volatile substance absorbed; a first electrode structure and a second electrode structure capacitively coupled together and arranged so that a capacitance between the first electrode structure and the second electrode structure is affected by the electrical permittivity of the sensitive material; and a supply device, configured to supply a heating current through one between the first electrode structure and the second electrode structure in a first operating condition, so as to heat the sensitive layer.

Abstract: A sensor of volatile substances includes: a first electrode structure and a second electrode structure capacitively coupled, comb-fingered, and arranged coplanar in a plane; and a sensitive layer, of a sensitive material that is permeable to a volatile substance and has electrical permittivity depending upon a concentration of the volatile substance absorbed by the sensitive material. The sensitive layer extends from opposite sides of the plane.

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

Abstract: An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

Abstract: An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

Abstract: An electronic semiconductor device comprising: a semiconductor body, having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side; a body region extending in the second structural region at the first side; a source region extending inside the body region; an LDD region facing the first side of the semiconductor body; and a gate electrode. The device comprises: a trench dielectric region extending through the second structural region a first trench conductive region immediately adjacent to the trench dielectric region; and a second trench conductive region in electrical contact with the body region and with the source region. An electrical contact at the second side of the semiconductor body is in electrical contact with the drain region via the first structural region.

Abstract: An electronic power component including a normally on high-voltage transistor and a normally off low-voltage transistor. The normally on transistor and the normally off transistor are coupled in cascode configuration and are housed in a single package. The normally off transistor is of the bottom-source type.

Abstract: An integrated circuit has a circuit part and a trimmable resistor, the resistance whereof may be modified by Joule effect. The trimmable resistor has first and second connection terminals coupled to the circuit part, and an intermediate terminal that divides the trimmable resistor into two portions. The first and the second connection terminals and the intermediate terminal are coupled to respective pads configured to receive electrical quantities designed to cause, in use, a respective trimming current flow in each portion. In this way, a substantially zero voltage drop is maintained between the first and second connection terminals while current is flowing in the resistor to change an electrical characteristic of the resistor, such as resistance or thermal coefficient.

Abstract: An electronic device is provided with: a first electronic circuit, integrated in a first die; a second electronic circuit, integrated in a second die; and a galvanic isolator element, designed to insulate galvanically, and to enable transfer of signals between, the first electronic circuit and the second electronic circuit. The galvanic isolator element has: a transformer substrate, distinct from the first die and from the second die; and a galvanic-insulation transformer formed by a first inductive element, integrated in the first die, and by a second inductive element, integrated in the transformer substrate and so arranged as to be magnetically coupled to the first inductive element.

Abstract: MOS device formed in a semiconductor body having a first conductivity type and a surface and housing a first current-conduction region and a second current-conduction region, of a second conductivity type. The first and second current-conduction regions define between them a channel, arranged below a gate region, formed on top of the surface and electrically insulated from the channel region. A conductive region extends on top of a portion of the channel, adjacent to and insulated from the gate region only on a side thereof facing the first current-conduction region. The conductive region is biased so as to modulate the current flowing in the channel.

Abstract: An electronic device is provided with: a first electronic circuit, integrated in a first die; a second electronic circuit, integrated in a second die; and a galvanic isolator element, designed to insulate galvanically, and to enable transfer of signals between, the first electronic circuit and the second electronic circuit. The galvanic isolator element has: a transformer substrate, distinct from the first die and from the second die; and a galvanic-insulation transformer formed by a first inductive element, integrated in the first die, and by a second inductive element, integrated in the transformer substrate and so arranged as to be magnetically coupled to the first inductive element.

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

Abstract: An embodiment of an electrically trimmable electronic device, wherein a resistor of electrically modifiable material is formed by a first generally strip-shaped portion and by a second generally strip-shaped portion, which extend transversely with respect to one another and are in direct electrical contact in a crossing area. The first and second portions have respective ends connected to own contact regions, coupled to a current pulse source and are made of the same material or of the same composition of materials starting from a same resistive layer of the material having electrically modifiable resistivity, for example, a phase-change material, such as a Ge—Sb—Te alloy, or polycrystalline silicon, or a metal material used for thin-film resistors. The trimming is performed by supplying a trimming current to the second portion so as to heat the crossing area and modify the resistivity thereof, without flowing longitudinally in the first portion.

Abstract: A lateral MOS device is formed in a body having a surface and is formed by a semiconductor layer of a first conductivity type; a drain region of a second conductivity type, formed in the semiconductor layer and facing the surface; a source region of the second conductivity type, formed in the semiconductor layer and facing the surface; a channel of the first conductivity type, formed in the semiconductor layer between the drain region and the source region and facing the surface; and an insulated gate region, formed on top of the surface over the channel region. In order to improve the dynamic performance, a conductive region extends only on one side of the insulated gate region, on top of the drain region but not on top of the insulated gate region.

Abstract: MOS device formed in a semiconductor body having a first conductivity type and a surface and housing a first current-conduction region and a second current-conduction region, of a second conductivity type. The first and second current-conduction regions define between them a channel, arranged below a gate region, formed on top of the surface and electrically insulated from the channel region. A conductive region extends on top of a portion of the channel, adjacent to and insulated from the gate region only on a side thereof facing the first current-conduction region. The conductive region is biased so as to modulate the current flowing in the channel.

Abstract: A lateral MOS device is formed in a body having a surface and is formed by a semiconductor layer of a first conductivity type; a drain region of a second conductivity type, formed in the semiconductor layer and facing the surface; a source region of the second conductivity type, formed in the semiconductor layer and facing the surface; a channel of the first conductivity type, formed in the semiconductor layer between the drain region and the source region and facing the surface; and an insulated gate region, formed on top of the surface over the channel region. In order to improve the dynamic performance, a conductive region extends only on one side of the insulated gate region, on top of the drain region but not on top of the insulated gate region.

Abstract: Described in the disclosure is a method for fabricating high-capacitance capacitive elements that are integrated in a semiconductor substrate. First a dielectric layer is formed over the surface of the substrate and a metal layer is deposited thereon. The metal layer is patterned and etched to form lower plates of the capacitive elements, as well as to form interconnection pads. Then, an intermediate dielectric layer is deposited on the lower plates and interconnection pads, and over the entire exposed surface of the substrate. Following that, a sacrificial conductive layer is deposited onto the intermediate dielectric layer, and the upper plates of the capacitive elements are formed out of the sacrificial conductive layer. Then, an upper dielectric layer is formed over the entire semiconductor, and openings are formed in this layer for the upper plates and the interconnection pads.

Abstract: A process for manufacturing a resistive structure that has a polysilicon strip laid above a semiconductor substrate is presented. The process begins by using a mask to cover the polysilicon strip. Then, several apertures are made in the mask until portions of the semiconductor strip are uncovered. Next, a dopant is implanted in the polysilicon semiconductor strip through the apertures. Finally, the resistive structure is subjected to a thermal process for diffusing the dopant in such a way to obtain a variable concentration profile in the semiconductor strip.