Abstract: A process for selectively introducing a dopant into the bottom of a trench formed in a semiconductor material layer includes depositing a barrier layer by a process of deposition over the semiconductor material layer to form a deposited barrier layer. The deposited barrier layer has, over lateral walls and a bottom wall of the trench, a thickness which is lower than a nominal thickness of the deposited barrier layer over a planar surface of the semiconductor material layer. The method also including implanting a dopant using the deposited barrier layer as an implant mask.

Abstract: An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a cobalt film deposited on the polycrystalline silicon (4) and on the oxide layer (10). (FIG.

Abstract: An electronic semiconductor device (20) with a control electrode (19) consisting of self-aligned polycrystalline silicon (4) and silicide (12), of the type in which said control electrode (19) is formed above a portion (1) of semiconductor material which accommodates active areas (9) of the device (20) laterally with respect to the electrode, has the active areas (9) at least partially protected by an oxide layer (10) while the silicide layer (12) is obtained by means of direct reaction between a cobalt film deposited on the polycrystalline silicon (4) and on the oxide layer (10). (FIG.

Abstract: The metallization of the back of the semiconductor substrate is obtained by depositing a series of metal layers, after ion implantation of dopant on the interface with the first layer. The step of ion implantation is followed by the deposition of one or more metal layers of the aforesaid series, and then by thermal annealing under vacuum or in an inert atmosphere, at a temperature considerably lower than 500.degree. C. and for a period considerably shorter than 60 minutes.

Abstract: A metal semiconductor ohmic contact farming process consists of enrichment of the surface of the semiconductor on which contact is to be formed, by ion implantation of a dopant, followed by deposition of a metal film on the implanted surface and then by thermal annealing at a temperature lower than 500.degree. C. and for a period shorter than 60 minutes.