Abstract: A method for forming an anti-reflective coating useful in the fabrication of integrated circuits is discussed. Applicants have found that preheating semiconductor wafers prior to the application of amorphous silicon anti-reflective coatings tends to reduce undesirable particulates which may attach to the wafer. The process is illustratively performed in a Varian 3180 machine having four stations. Illustratively, the wafer may be preheated between 70.degree. C. and 175.degree. C. prior to and during the sputter deposition of an amorphous silicon anti-reflective coating.

Abstract: A process for the formation of material layers such as amorphous silicon is disclosed. When a precursor gas such as silane is utilized to form amorphous silicon, silicon crystals are often formed on top of the amorphous silicon layer. The crystals are created by the presence of low pressure silane in the reactor at the end of the deposition cycle. Formation of crystals is inhibited by lowering the temperature before silane flow is terminated.