Patents by Inventor Arvind Kamath
Arvind Kamath has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9947988Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.Type: GrantFiled: August 5, 2016Date of Patent: April 17, 2018Assignee: Thin Film Electronics ASAInventors: Mao Takashima, Aditi Chandra, Somnath Mukherjee, Gloria Wong, Khanh Van Tu, Joey Li, Anton Popiolek, Arvind Kamath
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Patent number: 9933767Abstract: Systems and methods for providing a dynamically synchronized instance to a network device. A repository database stores a process model instance having a layout defined by data elements. A design tool processor coupled to the repository database provides the instance to a user device and a network device. The user device modifies data elements of the instance to generate a first version instance, and the design tool processor generates a dynamically synchronized instance for storing and serving the dynamically synchronized instance to a network device.Type: GrantFiled: July 29, 2015Date of Patent: April 3, 2018Assignee: Schneider Electric Software, LLCInventors: Iju V. Raj, Dirk K. Kozian, Thomas A. Troy, Prasanth Ittiera Eapen K, Elizabeth Geojy, Ajay Kumar Reddy Kopperla, Arvind Kamath
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Publication number: 20170200608Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.Type: ApplicationFiled: March 27, 2017Publication date: July 13, 2017Inventors: Wenzhuo GUO, Fabio ZÜRCHER, Arvind KAMATH, Joerg ROCKENBERGER
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Patent number: 9640390Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.Type: GrantFiled: May 7, 2013Date of Patent: May 2, 2017Assignee: Thin Film Electronics ASAInventors: Wenzhuo Guo, Fabio Zurcher, Arvind Kamath, Joerg Rockenberger
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Publication number: 20170098508Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.Type: ApplicationFiled: December 20, 2016Publication date: April 6, 2017Applicant: Thin Film Electronics ASAInventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI
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Publication number: 20170040665Abstract: A wireless communication device and methods of manufacturing and using the same are disclosed. The wireless communication device includes a substrate with an antenna and/or inductor thereon, a patterned ferrite layer overlapping the antenna and/or inductor, and a capacitor electrically connected to the antenna and/or inductor. The wireless communication device may further include an integrated circuit including a receiver configured to convert a first wireless signal to an electric signal and a transmitter configured to generate a second wireless signal, the antenna being configured to receive the first wireless signal and transmit or broadcast the second wireless signal. The patterned ferrite layer advantageously mitigates the deleterious effect of metal objects in proximity to a reader and/or transponder magnetically coupled to the antenna.Type: ApplicationFiled: August 5, 2016Publication date: February 9, 2017Applicant: Thin Film Electronics ASAInventors: Mao TAKASHIMA, Aditi CHANDRA, Somnath MUKHERJEE, Gloria WONG, Khanh VAN TU, Joey LI, Anton POPIOLEK, Arvind KAMATH
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Publication number: 20170031353Abstract: Systems and methods for providing a dynamically synchronized instance to a network device. A repository database stores a process model instance having a layout defined by data elements. A design tool processor coupled to the repository database provides the instance to a user device and a network device. The user device modifies data elements of the instance to generate a first version instance, and the design tool processor generates a dynamically synchronized instance for storing and serving the dynamically synchronized instance to a network device.Type: ApplicationFiled: July 29, 2015Publication date: February 2, 2017Applicant: INVENSYS SYSTEMS, INC.Inventors: Iju V. Raj, Dirk K. Kozian, Thomas A. Troy, Prasanth Ittiera Eapen K, Elizabeth Geojy, Ajay Kumar Reddy Kopperla, Arvind Kamath
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Patent number: 9552924Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.Type: GrantFiled: February 3, 2015Date of Patent: January 24, 2017Assignee: Thin Film Electronics ASAInventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
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Patent number: 9359513Abstract: Printable dopant formulations, methods of making such dopant formulations, and methods of using such dopant formulations are disclosed. The dopant formulations provide a printable dopant ink with a viscosity sufficient to prevent ink spreading when deposited in a pattern on a substrate. Furthermore, an ion exchange purification process provides the dopant formulation with a reduced metal ion concentration, and thus a relatively high purity level. Consequently, the dopant residue remaining on the substrate after curing and/or dopant activation process is relatively uniform, and therefore can be easily removed.Type: GrantFiled: June 16, 2014Date of Patent: June 7, 2016Assignee: Thin Film Electronics ASAInventors: Mao Takashima, Inna Tregub, Wenzhuo Guo, Brian Bedwell, Klaus Kunze, Aditi Chandra, Arvind Kamath, Jun Li, Li Li, Junfeng Mei
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Patent number: 9299845Abstract: Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon.Type: GrantFiled: May 28, 2010Date of Patent: March 29, 2016Assignee: Thin Film Electronics ASAInventors: Arvind Kamath, Michael Kocsis, Kevin McCarthy, Gloria Man Ting Wong
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Publication number: 20160035762Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g.Type: ApplicationFiled: September 8, 2015Publication date: February 4, 2016Applicant: THIN FILM ELECTRONICS, ASAInventors: James Montague CLEEVES, J. Devin MACKENZIE, Arvind KAMATH
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Patent number: 9196641Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.Type: GrantFiled: October 2, 2012Date of Patent: November 24, 2015Assignee: Thin Film Electronics ASAInventors: Arvind Kamath, James Montague Cleeves, Joerg Rockenberger, Patrick Smith, Fabio Zurcher
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Patent number: 9183973Abstract: Devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The devices include a metal substrate, a diffusion barrier layer on the metal substrate, one or more insulator layers on the diffusion barrier layer, and an antenna and/or inductor on the one or more insulator layer(s). The method includes forming a diffusion barrier layer on the metal substrate, forming one or more insulator layers on the diffusion barrier layer; and forming an antenna and/or inductor on an uppermost one of the insulator layer(s). The antenna and/or inductor is electrically connected to at least one of the diffusion barrier layer and/or the metal substrate. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into device layers formed thereon.Type: GrantFiled: April 29, 2013Date of Patent: November 10, 2015Assignee: Thin Film Electronics ASAInventors: Arvind Kamath, Michael Kocsis, Kevin McCarthy, Gloria Wong, Jiang Li
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Patent number: 9165238Abstract: Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g.Type: GrantFiled: January 19, 2010Date of Patent: October 20, 2015Assignee: Thin Film Electronics ASAInventors: James Montague Cleeves, J. Devin MacKenzie, Arvind Kamath
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Patent number: 9045653Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.Type: GrantFiled: August 23, 2013Date of Patent: June 2, 2015Assignee: Thin Film Electronics ASAInventors: Erik Scher, Steven Molesa, Joerg Rockenberger, Arvind Kamath, Ikuo Mori, Wenzhuo Guo, Dmitry Karshtedt, Vladimir K. Dioumaev
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Publication number: 20150146345Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition. The method generally comprises the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. Embodiments provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.Type: ApplicationFiled: February 3, 2015Publication date: May 28, 2015Applicant: Thin Film Electronics ASAInventors: Arvind KAMATH, Criswell CHOI, Patrick SMITH, Erik SCHER, Jiang LI
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Patent number: 8973231Abstract: High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition are disclosed. The method generally includes the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. The methods provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.Type: GrantFiled: April 23, 2013Date of Patent: March 10, 2015Assignee: Thin Film Electronics ASAInventors: Arvind Kamath, Criswell Choi, Patrick Smith, Erik Scher, Jiang Li
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Patent number: 8933806Abstract: The present invention relates to methods of making capacitors for use in surveillance/identification tags or devices, and methods of using such surveillance/identification devices. The capacitors manufactured according to the methods of the present invention and used in the surveillance/identification devices described herein comprise printed conductive and dielectric layers. The methods and devices of the present invention improve the manufacturing tolerances associated with conventional metal-plastic-metal capacitor, as well as the deactivation reliability of the capacitor used in a surveillance/identification tag or device.Type: GrantFiled: August 20, 2012Date of Patent: January 13, 2015Assignee: Thin Film Electronics ASAInventors: Vivek Subramanian, Patrick Smith, Vikram Pavate, Arvind Kamath, Criswell Choi, Aditi Chandra, James Montague Cleeves
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Patent number: 8912890Abstract: The disclosure relates to surveillance and/or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.Type: GrantFiled: October 1, 2012Date of Patent: December 16, 2014Assignee: Thin Film Electronics ASAInventors: Patrick Smith, Criswell Choi, James Montague Cleeves, Vivek Subramanian, Arvind Kamath, Steven Molesa
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Publication number: 20140299883Abstract: A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.Type: ApplicationFiled: June 20, 2014Publication date: October 9, 2014Inventors: Joerg ROCKENBERGER, James Montague Cleeves, Arvind Kamath