Abstract: The present invention relates to a dispersant composition for carbon nanotubes, containing: a copolymer that includes a structural unit A represented by the following general formula (1) and a structural unit B represented by the following general formula (2); and a solvent, wherein the content of the structural unit B in all structural units of the copolymer is 20 mass % or more. In the following formulae, R1, R2, R3, R5, R6, and R7 are the same or different from each other and are each a hydrogen atom, a methyl group, or an ethyl group, R4 is a hydrocarbon group having 16 to 30 carbon atoms, R8 is a linear or branched alkylene group having 2 to 3 carbon atoms, X1 is on oxygen atom or NH, X2 is an oxygen atom, p is the number of 1 to 8, and R9 is a hydrogen atom, a methyl group, or an ethyl group.

Abstract: The present invention relates to a dispersant for a positive electrode of a power storage device. The dispersant is a copolymer that contains a constitutional unit A represented by the following general formula (1) and at least one constitutional unit B selected from the group consisting of a constitutional unit B1 represented by the following general formula (2) and a constitutional unit B2 represented by the following general formula (3). The total content of the constitutional unit A and the constitutional unit B in the copolymer is 80% by mass or more. The content of the constitutional unit A in all constitutional units of the copolymer is 35% by mass or more.

Abstract: A negative electrode constituting a non-aqueous electrolyte secondary battery, which is an example of an embodiment, comprises a negative-electrode mixture layer including a negative-electrode active material and a binder agent. The negative electrode includes, as the binder agent, at least a polymer constituted by a constituent unit A represented by formula (1), a constituent unit B represented by formula (2), and a constituent unit C represented by formula (3). The molar ratio (l/m) of the constituent unit A to the constituent unit B is from 0.2 to 1.8.

Abstract: A method for producing a semiconducting SWCNT dispersion of the present invention comprises: a step A of preparing a to-be-separated SWCNT dispersion that includes a SWCNT mixture, an aqueous medium, and a polymer including a structural unit A derived from a monomer represented by Formula (1), and a step B of centrifuging the to-be-separated SWCNT dispersion and subsequently collecting a supernatant including the semiconducting SWCNT from the centrifuged to-be-separated SWCNT dispersion. The weight-average molecular weight of the polymer is 1,000 or more and 100,000 or less.

Abstract: In one aspect, provided is a method for producing a semiconducting single-walled carbon nanotube dispersion. This method allows semiconducting single-walled carbon nanotubes to be separated from a single-walled carbon nanotube mixture containing semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes in an aqueous medium, and yet requires only an easily available separation agent and a simple operation. One aspect of the present disclosure relates to a method for producing a semiconducting single-walled carbon nanotube dispersion.

Abstract: In one aspect, provided is a method for producing a semiconducting single-walled carbon nanotube dispersion. This method allows semiconducting single-walled carbon nanotubes to be separated from a single-walled carbon nanotube mixture containing semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes in an aqueous medium, and yet requires only an easily available separation agent and a simple operation. One aspect of the present disclosure relates to a method for producing a semiconducting single-walled carbon nanotube dispersion.

Abstract: The present invention relates to a dispersant for a positive electrode of a power storage device. The dispersant is a copolymer that contains a constitutional unit A represented by the following general formula (1) and at least one constitutional unit B selected from the group consisting of a constitutional unit B1 represented by the following general formula (2) and a constitutional unit B2 represented by the following general formula (3). The total content of the constitutional unit A and the constitutional unit B in the copolymer is 80% by mass or more. The content of the constitutional unit A in all constitutional units of the copolymer is 35% by mass or more.

Abstract: The present invention relates to a dispersant composition for carbon nanotubes, containing: a copolymer that includes a structural unit A represented by the following general formula (1) and a structural unit B represented by the following general formula (2); and a solvent, wherein the content of the structural unit B in all structural units of the copolymer is 20 mass % or more. In the following formulae, R1, R2, R3, R5, R6, and R7 are the same or different from each other and are each a hydrogen atom, a methyl group, or an ethyl group, R4 is a hydrocarbon group having 16 to 30 carbon atoms, R8 is a linear or branched alkylene group having 2 to 3 carbon atoms, X1 is on oxygen atom or NH, X2 is an oxygen atom, p is the number of 1 to 8, and R9 is a hydrogen atom, a methyl group, or an ethyl group.

Abstract: One aspect provides a resin composition that is used for an electrode of a power storage device and that has excellent ion permeability while ensuring good binding properties with an electrode. One aspect of the present disclosure relates to a resin composition for an electrode of a power storage device. The resin composition contains polymer particles. The polymer particles have ion permeability. A rate of change in elasticity of the polymer particles before and after treatment with an electrolyte solution [(modulus of elasticity after treatment)/(modulus of elasticity before treatment)] is 30% or less.

Abstract: A method for producing a semiconducting SWCNT dispersion of the present invention comprises: a step A of preparing a to-be-separated SWCNT dispersion that includes a SWCNT mixture, an aqueous medium, and a polymer including a structural unit A derived from a monomer represented by Formula (1), and a step B of centrifuging the to-be-separated SWCNT dispersion and subsequently collecting a supernatant including the semiconducting SWCNT from the centrifuged to-be-separated SWCNT dispersion. The weight-average molecular weight of the polymer is 1,000 or more and 100,000 or less.

Abstract: One aspect provides a resin composition that is used for an electrode of a power storage device and that has excellent ion permeability while ensuring good binding properties with an electrode. One aspect of the present disclosure relates to a resin composition for an electrode of a power storage device. The resin composition contains polymer particles. The polymer particles have ion permeability. A rate of change in elasticity of the polymer particles before and after treatment with an electrolyte solution [(modulus of elasticity after treatment)/(modulus of elasticity before treatment)] is 30% or less.

Abstract: A negative electrode constituting a non-aqueous electrolyte secondary battery, which is an example of an embodiment, comprises a negative-electrode mixture layer including a negative-electrode active material and a binder agent. The negative electrode includes, as the binder agent, at least a polymer constituted by a constituent unit A represented by formula (1), a constituent unit B represented by formula (2), and a constituent unit C represented by formula (3). The molar ratio (l/m) of the constituent unit A to the constituent unit B is from 0.2 to 1.8.

Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes a signal receiver that receives information signal: a control circuit that provides a plurality of control signals; and a signal receiver replica circuit that receives a first reference signal. The signal receiver replica circuit includes a plurality of receivers. Each receiver of the plurality of receivers receives the first reference signal and a corresponding control signal of the plurality of control signals, and further provides an output signal.

Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes a signal receiver that receives information signal: a control circuit that provides a plurality of control signals; and a signal receiver replica circuit that receives a first reference signal. The signal receiver replica circuit includes a plurality of receivers. Each receiver of the plurality of receivers receives the first reference signal and a corresponding control signal of the plurality of control signals, and further provides an output signal.

Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes a signal receiver that receives information signal; a control circuit that provides a plurality of control signals; and a signal receiver replica circuit that receives a first reference signal. The signal receiver replica circuit includes a plurality of receivers. Each receiver of the plurality of receivers receives the first reference signal and a corresponding control signal of the plurality of control signals, and further provides an output signal.

Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes a signal receiver that receives information signal; a control circuit that provides a plurality of control signals; and a signal receiver replica circuit that receives a first reference signal. The signal receiver replica circuit includes a plurality of receivers. Each receiver of the plurality of receivers receives the first reference signal and a corresponding control signal of the plurality of control signals, and further provides an output signal.

Abstract: Apparatuses are presented for a semiconductor device utilizing dual I/O line pairs. The apparatus includes a first I/O line pair coupled to a first local I/O line pair. A second I/O line pair may be provided coupled to a second local I/O line pair. The apparatus may further include a first bit line including at least a first memory cell and a second memory cell, and a second bit line including at least a third memory cell and a fourth memory cell may be provided. The first local I/O line pair may be coupled to at least one of the first and second bit lines, and the second local I/O line pair is coupled to at least one of the first and second bit lines.

Abstract: Apparatuses are presented for a semiconductor device utilizing dual I/O line pairs. The apparatus includes a first I/O line pair coupled to a first local I/O line pair. A second I/O line pair may be provided coupled to a second local I/O line pair. The apparatus may further include a first bit line including at least a first memory cell and a second memory cell, and a second bit line including at least a third memory cell and a fourth memory cell may be provided. The first local I/O line pair may be coupled to at least one of the first and second bit lines, and the second local I/O line pair is coupled to at least one of the first and second bit lines.

Abstract: Apparatuses for receiving an input signal in a semiconductor device are described. An example apparatus includes a signal receiver that receives information signal; a control circuit that provides a plurality of control signals; and a signal receiver replica circuit that receives a first reference signal. The signal receiver replica circuit includes a plurality of receivers. Each receiver of the plurality of receivers receives the first reference signal and a corresponding control signal of the plurality of control signals, and further provides an output signal.

Abstract: A semiconductor device includes a plurality of memory cells, an access circuit configured to perform a data read operation, a data write operation and a data refresh operation on the memory cells, the access circuit to operate in a selected one of a first mode that is ready to perform and a second mode that is not ready to perform, and a judgment circuit configured to respond to first command information, to cause, when the access circuit is in the first mode, the access circuit to perform the data refresh operation, and to cause, when the access circuit is in the second mode, the access circuit to exit from the second mode and then to perform the refresh operation.