Abstract: A collision energy absorbing device of a railcar includes: at least one outside plate constituting an outer tube having an axis extending in a car longitudinal direction; and at least one partition plate extending in the car longitudinal direction in an internal space surrounded by the at least one outside plate, the at least one partition plate fixed to the at least one outside plate and dividing the internal space. An end portion of the partition plate which portion is located at an end in a direction perpendicular to the axis is sandwiched by the at least one outside plate and constitutes a part of the outer tube.

Abstract: A carbody of a railcar includes: an underframe; a first member provided at one of vertical sides of a vertical center of the underframe, supported by the underframe, and absorbing collision energy; a second member provided at the other vertical side of the vertical center of the underframe, supported by the underframe, and contacting an obstacle when the first member is compressed by collision with the obstacle. In a case where the second member receives a reaction force from the obstacle when the first member is compressed by the collision with the obstacle, the second member transfers to the underframe a moment load that is opposite in a rotational direction to a moment load transferred to the underframe by the first member.

Abstract: An axial-flow compressor with variable stator vanes located at a single stage can be modified by adding variable stator vanes to the axial-flow compressor so that the variable stator vanes are located at a plurality of stages. The axial-flow compressor includes stator vane rows located at the plurality of stages and include the variable stator vanes extending in a radial direction of the axial-flow compressor and rotating around rotary shafts of the variable stator vanes so as to adjust angles of the variable stator vanes; a plurality of rings are connected to the stator vane rows and drive and rotate the variable stator vanes of the stator vane rows that correspond to respective rings; a plurality of levers that correspond to the plurality of rings; a rotary shaft that holds the plurality of levers so as to enable the levers to pivot.

Abstract: Provided are a negative electrode active material for a lithium ion secondary battery, which has sufficiently high discharge capacity at a high rate. The negative electrode active material containing silicon and silicon oxide includes primary particles having two phases of different compositions therein. One of the two phases has a higher silicon element concentration than the other phase, and is a fibrous phase forming a network structure in a cross section of the primary particle. Use of the negative electrode active material enables a sufficient increase in discharge capacity at a high rate.

Abstract: An object of the present invention is to provide a negative electrode for a lithium ion secondary battery with the excellent high-temperature cycle characteristic, and a lithium ion secondary battery including the same. In the negative electrode active material for a lithium ion secondary battery according to the present invention, a surface of a negative electrode active material including silicon or silicon oxide is coated with a polymer compound, and the polymer compound includes a polyacrylic acid derivative whose carboxyl groups at ends of side chains are cross-linked with a divalent metal cation (Mg2+, Ca2+, Sr2+, Ba2+, Co2+, Ni2+, Cu2+, or Zn2+).

Abstract: A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing the three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed.

Abstract: A positive electrode active material contains a compound represented by a chemical formula LiVOPO4. A crystal system of the compound is an orthorhombic system, and the amount of tetravalent V of the compound is 27.7 mass % or more and 28.2 mass % or less.

Abstract: A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.

Abstract: Disclosed is a gas turbine and a gas turbine power facility which flexibly accommodate changes in layout of devices and in user's needs. This invention includes an air compressor 1; a turbine 2 coaxially coupled to the compressor 1; a turbine casing 4 accommodating the compressor 1 and the turbine 2; a compressor output shaft 23 for coupling rotary devices including a power generator 200, the compressor output shaft 22 protruding from the turbine casing 4 towards the compressor 1; and a turbine output shaft 23 for coupling the rotary devices, the turbine output shaft 23 protruding from the turbine casing 4 towards the turbine 2.

Abstract: A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen element and an organic source containing the specific element and the halogen element; (b) supplying a second source to the substrate, the second source including at least one of amine, organic hydrazine, and hydrogen nitride; and (c) supplying a third source to the substrate, the third source including at least one of amine, organic hydrazine, hydrogen nitride, and organic borane.

Abstract: A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.

Abstract: A method of manufacturing a semiconductor device, including forming a laminated film on a substrate by performing a cycle a first predetermined number of times. The cycle includes forming a first film which contains a predetermined element, boron, and nitrogen, and forming a second film which contains boron and nitrogen. A composition ratio of boron to nitrogen in the second film is different from that in the first film. The first film and the second film are laminated to form the laminated film.

Abstract: A lithium ion secondary battery includes: a positive electrode including a positive electrode active material layer; a negative electrode; and an electrolyte. The positive electrode active material layer contains Lia(M)b(PO4)c (M=VO or V, 0.9?a?3.3, 0.9?b?2.2, 0.9?c?3.3) as a first positive electrode active material, and additionally contains a fluorine compound of 1 to 300 ppm in terms of fluorine with respect to a weight of the positive electrode active material layer.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate; and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer.

Abstract: According to the present disclosure, a film containing carbon added at a high concentration is formed with high controllability. A method of manufacturing a semiconductor device includes forming a film containing silicon, carbon and a predetermined element on a substrate by performing a cycle a predetermined number of times. The predetermined element is one of nitrogen and oxygen. The cycle includes supplying a precursor gas containing at least two silicon atoms per one molecule, carbon and a halogen element and having an Si—C bonding to the substrate, and supplying a modifying gas containing the predetermined element to the substrate.

Abstract: A negative electrode active material for a lithium ion secondary battery includes a network structure formed by at least some of iron oxide particles being linked to each other.

Abstract: A railcar includes: an underframe including an end beam at its railcar-longitudinal-direction end portion; side bodyshells; a roof bodyshell; side outside plates respectively arranged at both railcar-width-direction end portions of the railcar and constituting the side bodyshells; corner posts extending from the end beam toward the roof bodyshell; and intermediate coupling members each configured to couple the side outside plate and the corner post, the stiffness of the intermediate coupling member in a railcar longitudinal direction being lower than the stiffness of the intermediate coupling member in a vertical direction.

Abstract: The present invention increases controllability of a composition ratio of a multi-element film that contains a predetermined element and at least one element selected from the group consisting of boron, oxygen, carbon and nitrogen. There is provided a method of manufacturing a semiconductor device, including: forming a laminated film where a first film and a second film are laminated on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming the first film being free of borazine ring structure and including a predetermined element and at least one element selected from the group consisting of oxygen, carbon and nitrogen; and (b) forming the second film having a borazine ring structure and including at least boron and nitrogen.

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a film containing a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first process gas containing the predetermined element and a halogen element to the substrate; supplying a second process gas containing carbon and nitrogen to the substrate; supplying a third process gas containing carbon to the substrate; and supplying a fourth process gas to the substrate, the fourth process gas being different from each of the first to the third process gases.

Abstract: Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion unit; a process gas supply hole installed in a ceiling portion of the buffer chamber; an inert gas supply hole installed in the ceiling portion; a gas guide disposed in a gap between the dispersion unit and the ceiling portion, the gas guide including a base end portion disposed at a side of the process gas supply hole, a leading end portion disposed closer to the inert gas supply hole than to the process gas supply hole, and a plate portion connecting the base end portion and the leading end portion; a process chamber exhaust unit; and a control unit.