Abstract: [Object] To make it possible to acquire a plurality of physical features for use in biometric authentication with a compact housing. [Solution] Provided is an imaging device including: a light source configured to radiate light in at least two different wavelength bands; and an imaging element configured to acquire signals individually from the light in two different wavelength bands. The two different wavelength bands include a first wavelength band from 400 to 580 nm for use in dermatoglyphic pattern authentication, and a second wavelength band of 650 nm or more mainly including near-infrared rays for use in vein authentication.

Abstract: There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

Abstract: In a state that a first voltage is applied to a charging member so as to form a surface potential on a region of an image bearing member and a second voltage the same in polarity as the first voltage is applied to a transfer member, a detection unit detects a transfer current in the region of the image bearing member during one rotation of the image hearing member after the region passes through a charging portion, when an absolute value of the surface potential formed on the region immediately before entry into the charging portion is larger than an absolute value of the surface potential formed on the region when it is positioned upstream of a transfer portion and downstream of the charging portion in a rotational direction of the image bearing member.

Abstract: There is provided a resonator structure that obtains a highly accurate optical spectrum. The resonator structure includes a stacked structure that includes a semiconductor layer, a first resonator, a first reflection layer, a second resonator, a second reflection layer stacked in this order, allows light of a specific wavelength band to be transmitted therethrough, the semiconductor layer having a first average refractive index, the first resonator having a second average refractive index lower than the first average refractive index, and the first reflection layer having a third average refractive index higher than the second average refractive index.

Abstract: A solid-state imaging device includes a substrate and a photoelectric conversion region. The substrate has a charge accumulation region. The photoelectric conversion region is provided on the substrate. The photoelectric conversion region is configured to generate signal charges to be accumulated in the charge accumulation region. The photoelectric conversion region comprises a material that is not transparent.

Abstract: A developing apparatus, includes: a developer bearing member that encloses a magnet roller having a plurality of magnetic poles and is rotatable; a wall that forms a developer storing chamber for storing a magnetic developer therein; a restricting member configured to restrict a layer thickness of the magnetic developer carried by the developer bearing member; and a moving member configured to move the magnetic developer carried by the developer bearing member before the magnetic developer is restricted by the restricting member, the moving member being brought into contact with a surface of the developer bearing member, the moved developer being on the developer veering member after the moving member moved the developer on the developer bearing member, wherein the moving member is disposed at a position opposed to any of the magnetic pole positions of the plurality of magnetic poles.

Abstract: A ripple is suppressed in a solid-state imaging element that obtains a spectral spectrum. The solid-state imaging element includes a surface layer, a filter layer, and a photoelectric conversion layer. In the solid-state imaging element, the surface layer has a thickness exceeding a half of a coherence length of incident light. Furthermore, in the solid-state imaging element, the filter layer transmits predetermined target light of the incident light transmitted through the surface layer and reflects a rest of the incident light transmitted through the surface layer to the surface layer. Furthermore, in the solid-state imaging element, the photoelectric conversion layer photoelectrically converts the predetermined target light transmitted through the filter layer.

Abstract: A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric co

Abstract: The present disclosure relates to a solid-state imaging device, a driving method for the same, and an electronic appliance, and an object is to provide a solid-state imaging device that can achieve the pixel miniaturization and the global shutter function with higher sensitivity and saturated charge amount. Another object is to provide an electronic appliance including the solid-state imaging device. In a solid-state imaging device 1 having the global shutter function, a first charge accumulation unit 18 and a second charge accumulation unit 25 are stacked in the depth direction of a substrate 12, and the transfer of the signal charges from the first charge accumulation unit 12 to the second charge accumulation unit 25 is conducted by a vertical first transfer transistor Tr1. Thus, the pixel miniaturization can be achieved.

Abstract: The present disclosure relates to a sensor device and an electronic device capable of providing a better spectral characteristic. A sensor device is provided with a semiconductor substrate on which a photodiode is formed, a filter included in a multilayer structure stacked on a light-receiving surface side of the semiconductor substrate, and a moth-eye structure arranged on an outermost surface above the filter. Then, a surface plasmon resonance filter or a Fabry-Perot resonator filter is used as the filter. The present technology may be applied to, for example, a spectral device which performs multi-spectroscopy or hyperspectral spectroscopy.

Abstract: To provide a sensor that can improve reliability and image quality. Provided is a sensor including: at least one variable wavelength device including an optical element including at least two optical interference filters, the at least two optical interference filters arranged to face each other, the optical element having a gap between the at least two optical interference filters arranged to face each other, and a variable distance apparatus that changes a distance of the gap; and at least one photoelectric conversion element. The distance of the gap is changed to acquire continuous optical spectra.

Abstract: A solid-state imaging apparatus includes a pixel array part having a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of light in an infrared region absorbed in the other photoelectric conve

Abstract: In a state that a first voltage is applied to a charging member so as to form a surface potential on a region of an image bearing member and a second voltage the same in polarity as the first voltage is applied to a transfer ember, a detection unit detects a transfer current in the region of the image bearing member during one rotation of the image hearing member after the region passes through a charging portion, when an absolute value of the surface potential formed on the region immediately before entry into the charging portion is larger than an absolute value of the surface potential formed on the region when it is positioned upstream of a transfer portion and downstream of the charging portion in a rotational direction of the image bearing member.

Abstract: Provided is a solid-state image pickup device and a method of manufacture, and an electronic device capable of suppressing occurrence of a transmission wavelength shift with a simpler design. The solid-state image pickup device includes a multilayer film filter having a laminated structure in which a transmission wavelength adjustment layer is sandwiched between a first multilayer film layer and a second multilayer film layer. The transmission wavelength adjustment layer is formed such that at least two types of dielectrics having different refractive indexes mixedly exist, and an effective refractive index is determined according to a ratio of the mixture. The effective refractive index of the transmission wavelength adjustment layer gradually increases from a chip central portion in which an incident angle of light emitted onto the multilayer film filter is small toward a chip end portion in which the incident angle of light is large.

Abstract: A method of manufacturing a developer container including a frame configured to define a developer containing portion, a first electrode, and a second electrode arranged on a surface of the frame and having a surface opposed to the first electrode, a developer amount in the developer containing portion being detected based on a capacitance between the first electrode and the second electrode, the method including: holding a conductive resin member constituting the second electrode on a mold configured to mold the frame, a surface of the conductive resin member being in contact with a surface of the mold configured to mold a surface of the frame on a side of the developer containing portion; injecting a resin to be formed into the frame, into the mold on which the conductive resin member is held; and curing the resin to form the frame to which the second electrode is fixed.

Abstract: To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.

Abstract: A developing apparatus, includes: a developer bearing member that is rotatable; an moving member configured to move the magnetic developer carried on the developer bearing member before the magnetic developer is restricted by a restricting member, the moving member being rotatable and brought into contact with a surface of the developer bearing member; and a control portion, wherein, at a contact position between the developer bearing member and the moving member, assuming that a moving speed vector of a surface of the developer bearing member is taken as R and a moving speed vector of a surface of the moving member is taken as r, the control portion controls rotational operation of the developer bearing member and the moving member such that a direction of a vector R?r during image formation and a direction of a vector R?r during non-image formation be opposite to each other.

Abstract: There is provided an imaging device, an electronic apparatus including an imaging device, and an automotive vehicle including an electronic apparatus including an imaging device, including: a first substrate including a first set of photoelectric conversion units; a second substrate including a second set of photoelectric conversion units; and an insulating layer between the first substrate and the second substrate; where the insulating layer has a capability to reflect a first wavelength range of light and transmit a second wavelength range of light that is longer than the first wavelength range of light.

Abstract: The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are ?2 times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

Abstract: To improve detection efficiency in a solid-state imaging element including a SPAD in which an electrode and wiring are placed in a central portion. A solid-state imaging element includes a photodiode and a light collecting section. The photodiode includes a light receiving surface and an electrode placed on the light receiving surface, and that outputs an electrical signal in accordance with light incident on the light receiving surface in a state where a voltage exceeding a breakdown voltage is applied to the electrode. The light collecting section causes light from a subject to be collected in the light receiving surface other than a region where the electrode is placed.