Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An electronic package structure and a method for manufacturing the same are provided. The electronic package structure includes a first electronic component, a second electronic component, an interconnection element, an insulation layer, and an encapsulant. The second electronic component is disposed adjacent to the first electronic component. The interconnection element is disposed between the first electronic component and the second electronic component. The insulation layer is disposed between the first electronic component and the second electronic component and has a side surface and a top surface connecting to the side surface. The encapsulant surrounds the interconnection element and at least partially covers the top surface of the insulation layer and has an extended portion in contact with the side surface of the insulation layer.

Abstract: An optical structure film and a light source module are provided. The optical structure film includes multiple optical unit microstructures. Each of the optical unit microstructures has four side surfaces and an inwardly concave beam splitting surface. The beam splitting surface is respectively connected to the side surfaces, and the beam splitting surface has four endpoints when viewed from a front viewing angle. Connection lines of the four endpoints form a rectangle. The beam splitting surface includes at least one beam splitting curved surface. A junction of the at least one beam splitting curved surface and one of the four side surfaces is a first line segment. A projection of a midpoint of an edge of the rectangle on the beam splitting surface overlaps with a relative extreme point of the first line segment.

Abstract: A power converter includes a primary-side rectifying/filtering circuit, an AC-DC converter, a DC/DC converter, a primary-side controller, a secondary-side rectifying controller, and a secondary-side feedback controller. The primary-side rectifying/filtering circuit receives an input voltage, and rectifies and filters the input voltage into an adjusted input voltage. The AC-DC converter receives the adjusted input voltage. The primary-side controller provides a first control signal to control the AC-DC converter to convert the adjusted input voltage into a DC input voltage, and provides a second control signal to control the DC-DC converter. The secondary-side rectifying controller provides a third control signal to control the DC-DC converter to convert the DC input voltage into a conversion voltage to supply power to a load according to a gain condition.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.

Abstract: The present invention describes 2-methyl-quinazoline compounds of general formula (I), methods of preparing said compounds, intermediate compounds useful for preparing said compounds, pharmaceutical compositions and combinations comprising said compounds, and the use of said compounds for manufacturing pharmaceutical compositions. The 2-methyl substituted quinazoline compounds of general formula (I) effectively and selectively inhibit the Ras-Sos interaction without significantly targeting the EGFR receptor. They are therefore useful for the treatment or prophylaxis of diseases, in particular of hyperproliferative disorders, such as cancer as a sole agent or in combination with other active ingredients.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: The present invention relates to the treatment of herpes simplex virus (HSV) infection using an anti-HSV antibody. In particular, the anti-HSV antibody specifically binds to the glycoprotein D (gD) of herpes simplex virus-1 (HSV-1) and herpes simplex virus-2 (HSV-2). The treatment of the present invention is effective against drug-resistant and/or recurrent HSV infection.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a first movable portion, a fixed portion, a first driving assembly, and a first guiding assembly. The first movable portion is used for connecting to a first optical element driving mechanism. The first optical element driving mechanism has a main axis that extends in a first direction. The first movable portion is movable relative to the fixed portion. The first driving assembly is used for driving the first movable portion to move relative to the fixed portion. The first guiding assembly is used for guiding the movement of the fixed portion relative to the fixed portion.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: A packaging substrate assembly for fabricating a packaged module can include a packaging substrate having a surface, and an array of conductive pads implemented on the surface. The assembly can further include a conductive post formed over each conductive pad, with the conductive post including a first portion having a lateral dimension formed over the conductive pad and a second portion having a lateral dimension formed over the first portion. In some embodiments, the lateral dimension of the first portion is less than the lateral dimension of the second portion. In some embodiments, a dielectric layer can be implemented over the surface to cover the conductive pads and surround the first portion of each conductive post.

Abstract: A device is disclosed. The device includes a source contact and a drain contact, a first dielectric between the source contact and the drain contact, a channel under the source contact and the drain contact, and a gate electrode below the channel, the gate electrode in an area under the first dielectric that does not laterally extend under the source contact or the drain contact. A second dielectric is above the gate electrode and underneath the channel.

Abstract: A conductive via layer is deposited on a bottom electrode, then patterned and trimmed to form a sub 20 nm conductive via on the bottom electrode. The conductive via is encapsulated with a first dielectric layer, which is planarized to expose a top surface of the conductive via. A MTJ stack is deposited on the encapsulated conductive via wherein the MTJ stack comprises at least a pinned layer, a barrier layer, and a free layer. A top electrode layer is deposited on the MTJ stack and patterned and trimmed to form a sub 30 nm hard mask. The MTJ stack is etched using the hard mask to form an MTJ device and over etched into the encapsulation layer but not into the bottom electrode wherein metal re-deposition material is formed on sidewalls of the encapsulation layer underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.

Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.

Abstract: An electronic device includes a chip and a circuit structure layer overlapped with the chip. The circuit structure layer includes a redistribution structure layer and an element structure layer, and the redistribution structure layer and the element structure layer are electrically connected to the chip. At least one of the redistribution structure layer and the element structure layer includes at least one opening, and in a normal direction of the electronic device, the at least one opening is overlapped with aside of the chip.

Abstract: A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include air gaps formed in one or both sidewall spacers adjacent to the gate and/or above the source or drain regions of the device. The formation of the air gaps may reduce unwanted parasitic and/or fringing capacitance.

Abstract: The present disclosure relates to a chimeric influenza virus hemagglutinin (HA) polypeptide, comprising one or more stem domain sequence, each having at least 60% homology with a stem domain consensus sequence of H1 subtype HA (H1 HA) and/or H5 subtype HA (H5 HA), fused with one or more globular head domain sequence, each having at least 60% homology with a globular head domain consensus sequence of H1 subtype HA (H1 HA) or H5 subtype HA (H5 HA).

Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.

Abstract: A physiological signal measurement device is disclosed. In some implementations, the physiological signal measurement device includes a fixing element, a rack, a first sensor, and a second sensor. The fixing element is configured to be fixed on a limb of a user. The rack is configured to engage the fixing element and includes a first end and a second end distal to the first end. The first sensor is disposed on the first end of the rack. The sensor is disposed on the second end of the rack. The first end of the rack has a first stiffness, the second end of the rack has a second stiffness, and the first stiffness is higher than the second stiffness.