Patents by Inventor Beng S. Ong
Beng S. Ong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7795373Abstract: A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.Type: GrantFiled: April 6, 2006Date of Patent: September 14, 2010Assignee: Xerox CorporationInventors: Yuning Li, Beng S. Ong, Yiliang Wu
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Patent number: 7790498Abstract: A process including: (a) providing a gelable composition comprising a gelable semiconductor polymer and a liquid, wherein the polymer is at a low concentration in the liquid; (b) gelling the gelable composition to result in a gelled composition; (c) breaking the gelled composition to result in a flowable, broken gelled composition, wherein the viscosity of the flowable, broken gelled composition is at least about 10 times greater than the viscosity of the liquid; and (d) liquid depositing the flowable, broken gelled composition.Type: GrantFiled: April 19, 2006Date of Patent: September 7, 2010Assignee: Xerox CorporationInventors: Yiliang Wu, Beng S. Ong
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Publication number: 20100219409Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.Type: ApplicationFiled: May 20, 2010Publication date: September 2, 2010Applicant: XEROX CORPORATIONInventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
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Patent number: 7781564Abstract: A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.Type: GrantFiled: December 1, 2006Date of Patent: August 24, 2010Assignee: Xerox CorporationInventors: Beng S. Ong, Ping Liu, Yiliang Wu, Yu Qi
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Patent number: 7767999Abstract: An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.Type: GrantFiled: November 17, 2006Date of Patent: August 3, 2010Assignee: Xerox CorporationInventors: Beng S. Ong, Ping Liu, Lu Jiang, Yu Qi, Yiliang Wu
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Patent number: 7754510Abstract: A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.Type: GrantFiled: April 2, 2007Date of Patent: July 13, 2010Assignee: Xerox CorporationInventors: Yiliang Wu, Hadi K Mahabadi, Beng S Ong, Paul F Smith
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Patent number: 7755081Abstract: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.Type: GrantFiled: November 9, 2006Date of Patent: July 13, 2010Assignee: Xerox CorporationInventors: Yiliang Wu, Beng S. Ong, Ping Liu
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Patent number: 7736831Abstract: A process for preparing a toner includes mixing a polymeric resin emulsion, a colorant dispersion, and a wax to form a mixture; optionally adding a coagulant to the mixture; heating the mixture at a temperature below a glass transition temperature of the polymeric resin to aggregate the polymeric resin, colorant, and wax, to form aggregated particles; adding a coalescent agent to the aggregated particles; heating the aggregated particles and coalescent agent at a temperature above the glass transition temperature of the polymeric resin, to coalesce the aggregated particles to form toner particles, optionally cooling the mixture, and isolating the tone particles.Type: GrantFiled: September 8, 2006Date of Patent: June 15, 2010Assignee: Xerox CorporationInventors: Zhen Lai, Richard Fong, Yuhua Tong, Chieh-Min Cheng, Amy A. Grillo, Paul F. Smith, Paul J. Gerroir, Beng S. Ong
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Patent number: 7718998Abstract: An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) wherein each R? is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least one thiophene based conjugated segment.Type: GrantFiled: December 14, 2006Date of Patent: May 18, 2010Assignee: Xerox CorporationInventors: Ping Liu, Beng S. Ong, Yiliang Wu, Yuning Li, Hualong Pan
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Patent number: 7718999Abstract: An electronic device with a semiconductor layer of (I) wherein X is O or NR?; m represents the number of methylenes; M is a conjugated moiety; R and R? are selected from the group consisting of at least one of hydrogen, a suitable hydrocarbon, and a suitable hetero-containing group; a represents the number of 3-substituted thiophene units; b represents the number of conjugated moieties, and n represents the number of polymer repeating units.Type: GrantFiled: December 14, 2006Date of Patent: May 18, 2010Assignee: Xerox CorporationInventors: Yuning Li, Beng S. Ong
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Patent number: 7705111Abstract: A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.Type: GrantFiled: April 6, 2006Date of Patent: April 27, 2010Assignee: Xerox CorporationInventors: Beng S. Ong, Yuning Li, Yiliang Wu
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Patent number: 7705346Abstract: A novel barrier layer which protects electronic devices from adverse environmental effects such as exposure to light, oxygen and/or moisture is described. The barrier layer comprises a polymer, an antioxidant, and an inorganic particulate material.Type: GrantFiled: June 6, 2005Date of Patent: April 27, 2010Assignee: Xerox CorporationInventors: Mihaela Maria Birau, Yu Qi, Yiliang Wu, Beng S. Ong
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Patent number: 7700787Abstract: A small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3?-position of the other thiophene unit whereiType: GrantFiled: October 30, 2007Date of Patent: April 20, 2010Assignee: Xerox CorporationInventors: Beng S Ong, Ping Liu, Maria Birau, Yiliang Wu
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Patent number: 7651885Abstract: A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein the organic semiconductor exhibits a high oxygen sensitivity in a comparison solution without the stabilizer but a lower oxygen sensitivity in the liquid composition; (b) liquid depositing the liquid composition; and (c) drying the liquid composition to form a layer of the electronic device, wherein the layer comprises the organic semiconductor.Type: GrantFiled: December 16, 2005Date of Patent: January 26, 2010Assignee: Xerox CorporationInventors: Yuning Li, Beng S. Ong, Yiliang Wu
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Patent number: 7652339Abstract: An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.Type: GrantFiled: April 6, 2007Date of Patent: January 26, 2010Assignee: Xerox CorporationInventors: Yiliang Wu, Beng S. Ong, Alphonsus Hon-Chung Ng
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Patent number: 7632703Abstract: Methods are disclosed for improving organic thin-film transistor (OTFT) performance by acid doping of the semiconducting layer. The semiconducting polymer comprising the semiconductor layer is doped with an acid, especially a Lewis acid, either during or after polymerization of the polymer, but prior to application of the polymer onto the OTFT. Also disclosed are OTFTs having enhanced charge carrier mobility produced by these methods.Type: GrantFiled: December 22, 2005Date of Patent: December 15, 2009Assignee: Xerox CorporationInventors: Yiliang Wu, Beng S. Ong, Ping Liu
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Patent number: 7619055Abstract: An electronic device like a thin film transistor containing an arylamine polymer of the formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of repeating units.Type: GrantFiled: April 6, 2006Date of Patent: November 17, 2009Assignee: Xerox CorporationInventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
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Patent number: 7615607Abstract: A polymer comprising those selected from the group consisting of at least one of Formula (I), Formula (II), or mixtures thereof wherein each R1 to R10 is independently hydrogen, alkyl, aryl, alkoxy, halogen, arylalkyl, cyano, or nitro providing that R1 and R2 exclude halogen, nitro and cyano; a and b represent the number of rings; and n represents the number of repeating groups or moieties.Type: GrantFiled: April 6, 2006Date of Patent: November 10, 2009Assignee: Xerox CorporationInventors: Yiliang Wu, Ping Liu, Beng S. Ong
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Patent number: 7612374Abstract: A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer, and wherein at least one of the source electrode, the drain electrode, and the gate electrode comprise coalesced coinage metal containing nanoparticles and a residual amount of one or both of a stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles and a decomposed stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles.Type: GrantFiled: December 12, 2007Date of Patent: November 3, 2009Assignee: Xerox CorporationInventors: Yiliang Wu, Yuning Li, Beng S Ong
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Publication number: 20090234056Abstract: A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.Type: ApplicationFiled: May 7, 2009Publication date: September 17, 2009Applicant: XEROX CORPORATIONInventors: Yiliang Wu, Hadi K. Mahabadi, Beng S. Ong, Paul F. Smith