Abstract: An electronic device adapted to executing at least one application, includes an access control, wherein a number of authentication means implemented by the access control is settable according to a security level assigned to the application.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: An image acquisition device includes a single sensor having organic photodetectors, an angular filter, and a color filter. The color filter has one or a plurality of first portions adapted to give way to at least one wavelength in the visible range, and one or a plurality of second portions filtering wavelengths outside of red and/or near infrared. The second portion has a surface area approximately equal to a surface area of one of the photodetectors or a surface area greater than or equal to the surface area of four of the photodetectors.

Abstract: An angular filter includes an array of microlenses, a first array of openings in a layer of a first resin and a second array of openings in a layer of a second resin. The first resin blocks at least a first radiation and the second resin blocks a second radiation, different from the first radiation.

Abstract: An angular filter for an image acquisition device including a stack includes: a layer with mediums having different refraction indexes and transparent to the radiation, the layer only letting through rays of the radiation having incidences smaller than a first maximum incidence; and an array of openings delimited by walls opaque to a visible and/or infrared radiation and an array of microlenses. The assembly formed by the array of openings and the array of microlenses only lets through rays having incidences smaller than a second maximum incidence smaller than the first maximum incidence.

Abstract: An angular filter for an image acquisition device including a stack, includes: a first array of first openings delimited by first walls opaque to a visible and/or infrared radiation; an array of microlenses; and a second array of second openings delimited by second walls opaque to the visible and/or infrared radiation.

Abstract: An image acquisition system includes a single organic image sensor, a waveguide layer covering the image sensor, and an image processing unit adapted to extract information relative to fingerprints and to veins of a hand imaged by the sensor. The waveguide layer is illuminated in a plane by a first source adapted to emit a first radiation having at least one wavelength in a range from 400 nm to 600 nm, and a second source adapted to emit a second radiation having its wavelength(s) in a range from 600 nm to 1,100 nm.

Abstract: An image sensor includes organic photodetectors and an angular filter less than 20 ?m away from the photodetectors. Further, a method of manufacturing an image sensor includes the forming of organic photodetectors and of an angular filter less than 20 ?m away from the photodetectors.

Abstract: A device includes a display screen and an image sensor. A first electromagnetic shielding layer permeable to light is arranged between active portions of the display screen and active portions of the image sensor.

Abstract: An image acquisition device includes a single sensor having organic photodetectors, an angular filter, and a color filter. The color filter has one or a plurality of first portions adapted to give way to at least one wavelength in the visible range, and one or a plurality of second portions filtering wavelengths outside of red and/or near infrared. The second portion has a surface area approximately equal to a surface area of one of the photodetectors or a surface area greater than or equal to the surface area of four of the photodetectors.

Abstract: A device includes an at least partially transparent screen and, between the screen and an optical sensor, a layer having at least one optically clear portion with a refraction index smaller by at least 0.1 than the refraction index of an optical material of the optical sensor.

Abstract: A device having a stack includes an image sensor in MOS technology adapted to detect a radiation; a first lens array; a structure formed of at least a first matrix of openings delimited by walls opaque to the radiation; and a second lens array.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.

Abstract: An image sensor includes first pixels and second pixels. The second pixels of the image sensor are distinct from the first pixels of the image sensor.

Abstract: An angular filter includes a first and a second array of plano-convex lenses and an array of openings. The planar surfaces of the lenses of the first array and of the second array face one another.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 8 mg/mL to 12 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 18 mg/mL to 22 mg/mL per milliliter of solvent.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.