Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl compound, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material having fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 12 mg/mL to 17 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 24 mg/mL to 28 mg/mL per milliliter of solvent.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor polymer including a conjugated aryl polymer, a conjugated heteroaryl compound, or a mixture of at least two of these compounds; an n-type semiconductor material including fullerene, substituted fullerene, or a mixture of at least two of these compounds; and a non-aqueous solvent. The concentration of the p-type organic semiconductor polymer is in the range from 4 mg/mL to 8 mg/mL per milliliter of solvent and the concentration of the p-type organic semiconductor material is in the range from 10 mg/mL to 14 mg/mL per milliliter of solvent.

Abstract: A pixel includes at least one organic light-emitting component including a first hole injection layer; and at least one organic photodetector, including a second hole injection layer. The first and second hole injection layers are made of a same material.

Abstract: An angular filter for an image sensor includes opaque resin patterns at least partially covered with a first humidity-tight layer.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A pixel includes a CMOS support and at least two organic photodetectors. A same lens is vertically in line with the organic photodetectors.

Abstract: A method of manufacturing an optoelectronic device that includes an optical sensor with organic photodiodes capable of capturing a radiation, the optical sensor covering an electronic circuit with MOS transistors. The method includes forming, on the optical sensor, on the side of the optical sensor opposite to the electronic device, a first layer transparent to the radiation, the first layer having a planar surface on the side opposite to the optical sensor; and forming a second layer on the surface, the second layer being oxygen- and water-tight.

Abstract: A formulation for preparing organic electronic devices, has: a p-type organic semiconductor material, an n-type semiconductor material, and a non-aqueous solvent. The concentration of the p-type organic semiconductor material is in the range from 4 mg/mL to 25 mg/mL per milliliter of solvent and the proportion between the p-type organic semiconductor material and the n-type organic semiconductor material varies from 1:1 to 1:2 by weight.

Abstract: An ink includes a first non-aqueous solvent and a polymer selected from among a polyethylenimine, an ethoxylated polyethylenimine, a perfluoroanthracene, and one or a plurality of conjugated thiols.

Abstract: A method of manufacturing an optoelectronic device includes the successive steps of forming on a support first and second electrically-conductive pads; depositing an active organic layer covering the first and second electrically-conductive pads; depositing a first interface layer on the active organic layer in contact with the active organic layer; forming a first opening in the first interface layer and a second opening in the active organic layer in line with the first opening, to expose the second electrically-conductive pad; and forming a second interface layer at least partly extending in the first and second openings. The second interface layer is in contact with the first interface layer and with the second electrically-conductive pad.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Abstract: A device includes an at least partially transparent screen and, between the screen and an optical sensor, a layer having at least one optically clear portion with a refraction index smaller by at least 0.1 than the refraction index of an optical material of the optical sensor.

Abstract: A device includes an at least partially transparent screen, an optical sensor and, between the sensor and the screen, a non-peripheral portion. The non-peripheral portion includes one or a plurality of rigid elements.

Abstract: An image sensor includes organic photodetectors and an angular filter less than 20 ?m away from the photodetectors. Further, a method of manufacturing an image sensor includes the forming of organic photodetectors and of an angular filter less than 20 ?m away from the photodetectors.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

Abstract: An image sensor includes an array of readout circuits in non-organic technology and photodiodes made of organic materials.

Abstract: A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, separate photosensitive blocks covering the substrate, and color filters covering the substrate, the image sensor further including first and second electrodes on either side of each photosensitive block and delimiting a second photodiode in each photosensitive block. The first photodiodes are configured to absorb the electromagnetic waves of the visible spectrum and each photosensitive block is configured to absorb the electromagnetic waves of the visible spectrum of a first portion of the infrared spectrum.

Abstract: A device for detecting an electromagnetic radiation has at least one photodetector including an organic diode and an organic photodiode formed in a same stack of semiconductor layers, the organic photodiode receiving the radiation. The photodetector further includes at least one screen which is opaque to the radiation and screens the portion of the stack corresponding to the diode.

Abstract: A method of manufacturing an optical system including a layer having through or partially through holes and covered with an array of micrometer-range optical elements, the optical system including a surface intended to receive a first radiation, the method including exposing a film, made of the same material as the layer or of a material different from that of the layer, to a second radiation through the array of micrometer-range optical elements, the material being photosensitive to the second radiation or machinable by the second radiation, and removing the portions of the film exposed or non-exposed to the second radiation to delimit the holes totally or partially crossing said layer.