Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Abstract: In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

Abstract: A leadless packaged semiconductor device includes a metal substrate having at least a first through-hole aperture having a first outer ring and a plurality of cuts through the metal substrate to define spaced apart metal pads on at least two sides of the first through-hole aperture. A semiconductor die that has a back side metal (BSM) layer on its bottom side and a top side with circuitry coupled to bond pads is mounted top side up on the first outer ring. A metal die attach layer is directly between the BSM layer and walls of the metal substrate bounding the first through-hole aperture that provides a die attachment that fills a bottom portion of the first through-hole aperture. Bond wires are between metal pads and the bond pads. A mold compound is also provided including between adjacent ones of the metal pads.

Abstract: A first conductive routing structure is electrically connected to a first electronic component. A second conductive routing structure is electrically connected to a second electronic component. An additive deposition process deposits a material over a surface of a processed wafer to form a conductive or resistive structure, which extends from a portion of the first conductive routing structure to a portion of the second conductive routing structure, to configure a circuit including the first and second electronic components.

Abstract: In described examples, an integrated circuit includes a leadframe structure, which includes electrical conductors. A first coil structure is electrically connected to a first pair of the electrical conductors of the leadframe structure. The first coil structure is partially formed on a semiconductor die structure. A second coil structure is electrically connected to a second pair of the electrical conductors of the leadframe structure. The second coil structure is partially formed on the semiconductor die structure. A molded package structure encloses portions of the leadframe structure. The molded package structure exposes portions of the first and second pairs of the electrical conductors to allow external connection to the first and second coil structures. The molded package structure includes a cavity to magnetically couple portions of the first and second coil structures.

Abstract: An apparatus includes a substrate containing a cavity and a dielectric structure covering at least a portion of the cavity. The cavity is hermetically sealed. The apparatus also may include a launch structure formed on the dielectric structure and outside the hermetically sealed cavity. The launch structure is configured to cause radio frequency (RF) energy flowing in a first direction to enter the hermetically sealed cavity through the dielectric structure in a direction orthogonal to the first direction.

Abstract: A composite material comprises a polymer matrix having microstructure filler materials that comprise a plurality of interconnected units wherein the units are formed of connected tubes. The tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, growing or depositing a material on the metal microlattice such as graphene, hexagonal boron nitride or other ceramic, and subsequently removing the metal microlattice.

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Abstract: In some examples, a system comprises a first component having a first surface, a first set of nanoparticles coupled to the first surface, and a first set of nanowires extending from the first set of nanoparticles. The system also comprises a second component having a second surface, a second set of nanoparticles coupled to the second surface, and a second set of nanowires extending from the second set of nanoparticles. The system further includes an adhesive positioned between the first and second surfaces. The first and second sets of nanowires are positioned within the adhesive.

Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.

Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Abstract: A removable module includes circuitry, a near field communication (NFC) coupler to provide a data signal to the circuitry, and a second NFC coupler to supply operating voltage to the circuitry.

Abstract: An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.

Abstract: A method for forming a semiconductor structure includes curing a shape memory polymer in a first shape. The shape memory polymer is coupled to a conductive layer. The method further includes folding the shape memory polymer from the first shape into a second shape. The method also includes bonding a semiconductor wafer to the conductive layer while the shape memory polymer is in the second shape. The semiconductor wafer has first and second dies. The semiconductor wafer is then singulated to separate the first die from the second die. The method further includes expanding the shape memory polymer to its first shape and singulating the shape memory polymer to separate the first and second dies.

Abstract: A differential nondispersive infrared (NDIR) sensor incorporates an infrared (IR) chopper and multiple multi-bit digital registers to store and compare parameter ratio values, as may be digitally calibrated to corresponding temperature values, from chopper clock cycle portions in which a plasmonic MEMS detector is irradiated by the IR chopper with such values from chopper clock cycle portions in which the IR detector is not irradiated by the IR chopper. The plasmonic MEMS detector is referenced to a reference MEMS device via a parameter-ratio engine. The reference device can include a broadband IR reflector or can have a lower-absorption metasurface pattern giving it a lower quality factor than the plasmonic detector. The resultant enhancements to accuracy and precision of the NDIR sensor enable it to be used as a sub-parts-per-million gas concentration sensor or gas detector having laboratory, commercial, in-home, and battlefield applications.

Abstract: In an integrated circuit (IC), a semiconductor substrate has a first side and an opposite second side. The second side has a trench. Circuitry is on the first side. An inductive structure is within the trench. The inductive structure is connected to the circuitry through vias in the semiconductor substrate. The semiconductor substrate is mounted on a package substrate. At least a portion of the inductive structure contacts the package substrate. The circuitry is coupled to the inductive structure through wires to the package substrate.

Abstract: A system is provided in which a first waveguide has a first resonator coupled to an end of the first waveguide. A second waveguide has a second resonator coupled to the second waveguide. The first resonator is spaced apart from the second resonator by a gap distance. Transmission of a signal propagated by the first waveguide across the gap to the second waveguide is enhanced by a confined near field mode magnetic field produced by the first resonator in response to the propagating wave that is coupled to the second resonator.

Abstract: A device includes a multilayer substrate having a first surface and a second surface opposite the first surface. An integrated circuit is mounted on the second surface of the multilayer substrate, the integrated circuit having transmission circuitry configured to process millimeter wave signals. A substrate waveguide having a substantially solid wall is formed within a portion of the multilayer substrate perpendicular to the first surface. The substrate waveguide has a first end with the wall having an edge exposed on the first surface of the multilayer substrate. A reflector is located in one of the layers of the substrate and is coupled to an edge of the wall on an opposite end of the substrate waveguide.

Abstract: A packaged electronic device includes an integrated circuit and an electrically non-conductive encapsulation material in contact with the integrated circuit. A thermal conduit extends from an exterior of the package, through the encapsulation material, to the integrated circuit. The thermal conduit has a thermal conductivity higher than the encapsulation material contacting the thermal conduit. The thermal conduit includes a cohered nanoparticle film. The cohered nanoparticle film is formed by a method which includes an additive process.

Abstract: Millimeter wave energy is provided to a spectroscopy cavity of a spectroscopy device that contains interrogation molecules. The microwave energy is received after it traverses the spectroscopy cavity. The amount of interrogation molecules in the spectroscopy cavity is adjusted by activating a precursor material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to increase the amount of interrogation molecules or by activating the getter material in one or more sub-cavities coupled to the spectroscopy cavity by a diffusion path to decrease the amount of interrogation molecules.