Abstract: A display device includes a substrate and a display element layer disposed on the substrate and emitting light. The display element layer includes a first electrode electrically connected to a portion of a first light emitting element, a second electrode electrically connected to another portion of the first light emitting element, and at least one insulating structure disposed on the substrate and having a convex shape protruding from the substrate. The first light emitting element is disposed in a space of the at least one insulating structure. A method of manufacturing the display device is also disclosed.

Abstract: A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

Abstract: Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

Abstract: A light source member including a substrate, and a plurality of unit light source cells disposed on the substrate and arranged in a matrix, each of the unit light source cells including a light source driving electrode disposed on the substrate, a light source disposed on the substrate and electrically connected to the light source driving electrode, an organic layer disposed on the substrate and exposing the light source and at least a part of the light source driving electrode, the organic layer having an upper surface including a concavo-convex pattern, and a heat dissipation layer disposed on the organic layer and contacting the light source driving electrode.

Abstract: A backlight unit includes a first substrate, a plurality of LED chips on one surface of the first substrate and configured to emit light of a first color, a second substrate located opposite to the one surface of the first substrate, and a plurality of light modulation patterns on one surface of the second substrate facing the one surface of the first substrate so as to overlap the plurality of LED chips, respectively. Each of the plurality of light modulation patterns includes a first wavelength conversion pattern that converts the light of the first color into light of a second color. The first wavelength conversion pattern includes a first wavelength conversion layer on the one surface of the second substrate, a first organic encapsulation layer on the first wavelength conversion layer, and a barrier structure covering the first wavelength conversion layer and the first organic encapsulation layer.

Abstract: Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Abstract: Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

Abstract: A plasma processing chamber includes a chamber body and a lid assembly coupled to the chamber body to define a processing volume. The lid assembly includes a backing plate coupled to the chamber body, a diffuser with a plurality of openings formed therethrough, and a heat conductive spacer disposed between and coupled to the backing plate and the diffuser to transfer heat from the diffuser to the backing plate. The plasma processing chamber further includes a substrate support disposed within the processing volume.

Abstract: A method and apparatus for obtaining at least one normalized baseline spectrum for a processing volume of a processing chamber; calculating a distribution value of the normalized baseline spectrum; obtaining a plurality of normalized cleaning process spectrums; calculating a distribution function of the plurality of normalized cleaning process spectrums; comparing the distribution value to the distribution function; and determining an end point by identifying when the distribution function approaches the distribution value.

Abstract: The present disclosure generally relates to a substrate support for use in a substrate processing chamber. A roughened substrate support reduces arcing within the chamber and also contributes to uniform deposition on the substrate. A substrate support may have a substrate support body having a surface roughness of between about 707 micro-inches and about 834 micro-inches. The substrate support may have an anodized coating on the substrate support.

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process.

Abstract: The present invention generally relates to a substrate support for use in a processing chamber. The substrate support has a rectangular body. The rectangular body has a first quadrant, a second quadrant, a third quadrant and a fourth quadrant. A first heating element is disposed in the first quadrant and extending from a center area of the rectangular body. The first heating element has a first segment having a first length and extending from the center area, a second segment having a second length, the second segment extending from the first segment and coupled thereto, a third segment having a third length extending from the second segment and coupled thereto, and a fourth segment having a fourth length coupled to and extending from the third segment to the center area. A second heating element is enclosed by the first heating element and the center area.

Abstract: A method and apparatus for equalized plasma coupling is provided herein. Discontinuity marks, also known as golf tee mura, are eliminated or minimized by biasing or grounding lift pins disposed in openings towards the center of a substrate support. To prevent shorting between a biased or grounded lift pin and the substrate support, lift pins are electrically isolated from the substrate support. The electrical isolation of the lift pin includes coating the lift pins with an electrically insulating material or lining a respective substrate support opening with an electrically insulating material.

Abstract: The present disclosure generally relates to capacitors having a multilayer dielectric material between two electrodes. The multilayer dielectric material can have a small thickness with little to no breakdown strength reduction. By utilizing a multilayer dielectric structure in a capacitor, not only can the breakdown strength remain at an acceptable level, but the collective thickness of the capacitor may be reduced to accommodate the higher density pixels for display devices or any device that utilizes a capacitor.

Abstract: A display device is provided. The display device includes a base; a gate conductor disposed directly on the base and including a gate line and a gate electrode; a gate insulating layer disposed on the gate conductor and including an overlap portion, which overlaps with the gate conductor, and a non-overlap portion, which is connected to the overlap portion, does not overlap with the gate conductor, and is spaced apart from the base; and a semiconductor pattern disposed on the gate insulating layer and overlapping with the gate electrode, wherein edges of the gate insulating layer project further than edges of the gate conductor and edges of the semiconductor pattern.

Abstract: Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.

Abstract: The present disclosure generally relates to a gas distribution plate for ensuring deposition uniformity. The gas distribution plate has multiple concave portions on the downstream side to ensure uniform deposition in corner regions of the processing chamber.

Abstract: Embodiments of the present invention provide an apparatus and methods for detecting an endpoint for a cleaning process. In one example, a method of determining a cleaning endpoint includes performing a cleaning process in a plasma processing chamber, directing an optical signal to a surface of a shadow frame during the cleaning process, collecting a return reflected optical signal reflected from the surface of the shadow frame, determining a change of reflectance intensity of the return reflected optical signal as collected, and determining an endpoint of the cleaning process based on the change of the reflected intensity. In another example, an apparatus for performing a plasma process and a cleaning process after the plasma process includes an optical monitoring system coupled to a processing chamber, the optical monitoring system configured to direct an optical beam light to a surface of a shadow frame disposed in the processing chamber.