Patents by Inventor Beom Soo Park
Beom Soo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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PROCESS GAS FLOW GUIDES FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS AND METHODS
Publication number: 20140030056Abstract: The present invention provides methods and apparatus for a gas diffusion assembly in a deposition processing chamber. The invention includes a backing plate having an inlet for providing a process gas to a process chamber, a diffusion plate including a plurality of apertures for allowing the process gas to flow into the process chamber, a blocking plate disposed between the backing plate and the diffusion plate and including a plurality of apertures, and at least one gas flow guide disposed between the blocking plate and the backing plate and adapted to direct process gas flow laterally. Numerous additional features are disclosed.Type: ApplicationFiled: July 23, 2013Publication date: January 30, 2014Inventors: Dongsuh Lee, Beom Soo Park, Yi Cui, William N. Sterling -
Publication number: 20140024180Abstract: Embodiments of the invention provide methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.Type: ApplicationFiled: July 20, 2013Publication date: January 23, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Young Jin CHOI, Jrjyan Jerry CHEN, Beom Soo PARK, Soo Young CHOI
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Publication number: 20130302999Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.Type: ApplicationFiled: May 2, 2013Publication date: November 14, 2013Inventors: Tae Kyung WON, Seon-Mee CHO, Soo Young CHOI, Beom Soo PARK, Dong-Kil YIM, John M. WHITE, Jozef KUDELA
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Publication number: 20130263782Abstract: Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.Type: ApplicationFiled: August 7, 2012Publication date: October 10, 2013Applicant: Applied Materials, Inc.Inventors: QUNHUA WANG, Soo Young Choi, Robin L. Tiner, John M. White, Gaku Furuta, Beom Soo Park
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Publication number: 20130210199Abstract: A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.Type: ApplicationFiled: February 15, 2013Publication date: August 15, 2013Inventors: Jrjyan Jerry CHEN, Tae K. WON, Beom Soo PARK, Young Jin CHOI, Soo Young CHOI
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Publication number: 20130140009Abstract: The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.Type: ApplicationFiled: December 20, 2012Publication date: June 6, 2013Inventors: John M. White, Soo Young Choi, Beom Soo Park, Gaku Furuta, Young Jin Choi, Robin L. Tiner
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Patent number: 8430961Abstract: The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.Type: GrantFiled: September 5, 2008Date of Patent: April 30, 2013Assignee: Applied Materials, Inc.Inventors: Beom Soo Park, Young Jin Choi, Robin L. Tiner, Sam H. Kim, Soo Young Choi, John M. White, Dong-Kil Yim
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Publication number: 20130087783Abstract: Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.Type: ApplicationFiled: September 28, 2012Publication date: April 11, 2013Applicant: Applied Materials, Inc.Inventors: Qunhua Wang, Weijie Wang, Young Jin Choi, Seon-Mee Cho, Yi Cui, Beom Soo Park, Soo Young Choi
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Publication number: 20130068161Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.Type: ApplicationFiled: June 29, 2012Publication date: March 21, 2013Applicant: Applied Materials, Inc.Inventors: John M. White, Suhail Anwar, Jozef Kudela, Carl A. Sorensen, Tae K. Won, Seon-Mee Cho, Soo Young Choi, Beom Soo Park, Benjamin M. Johnston
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Publication number: 20130071581Abstract: The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.Type: ApplicationFiled: September 19, 2012Publication date: March 21, 2013Inventors: Jonghoon Baek, Sam H. Kim, Beom Soo Park, John M. White, Shinichi Kunita, Hsiao-Lin Yang
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Patent number: 8381677Abstract: A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.Type: GrantFiled: December 13, 2007Date of Patent: February 26, 2013Assignee: Applied Materials, Inc.Inventors: Beom Soo Park, Robin L. Tiner, Soo Young Choi, John M. White
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Patent number: 8372205Abstract: A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.Type: GrantFiled: July 15, 2005Date of Patent: February 12, 2013Assignee: Applied Materials, Inc.Inventors: Soo Young Choi, Beom Soo Park, Quanyuan Shang, John M. White, Dong-Kil Yim, Chung-Hee Park
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Patent number: 8361549Abstract: A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.Type: GrantFiled: December 9, 2011Date of Patent: January 29, 2013Assignee: Applied Materials, Inc.Inventors: Dong-Kil Yim, John M. White, Soo Young Choi, Han Byoul Kim, Jin Man Ha, Beom Soo Park
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Publication number: 20120279943Abstract: A method and apparatus for processing a substrate is provided. In one embodiment, the apparatus is in the form of a processing chamber that includes a chamber body having a processing volume defined therein. A substrate support, a gas delivery tube assembly and a plasma line source are disposed in the processing volume. The gas delivery tube assembly includes an inner tube is disposed in an outer tube. The inner tube has a passage for flowing a cooling fluid therein. The outer tube has a plurality of gas distribution apertures for providing processing gas into the processing volume.Type: ApplicationFiled: May 3, 2012Publication date: November 8, 2012Applicant: Applied Materials, Inc.Inventors: Helinda Nominanda, Tae Kyung Won, Seon-Mee Cho, Beom Soo Park, Soo Young Choi
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Publication number: 20120171391Abstract: Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.Type: ApplicationFiled: December 20, 2011Publication date: July 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Tae Kyung WON, Helinda NOMINANDA, Seon-Mee CHO, Soo Young CHOI, Beom Soo PARK, John M. WHITE, Suhail ANWAR, Jozef KUDELA
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Publication number: 20120149194Abstract: Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.Type: ApplicationFiled: February 21, 2012Publication date: June 14, 2012Applicant: APPLIED MATERIALS, INC.Inventors: SAM H. KIM, John M. White, Soo Young Choi, Carl A. Sorensen, Robin L. Tiner, Beom Soo Park
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Patent number: 8173228Abstract: A method of reducing the amount of particulates generated from the surface of a processing component used during plasma enhanced chemical vapor deposition of thin films. The body of the processing component comprises an aluminum alloy, and an exterior surface of said processing component is texturized to increase the amount of surface area present on the exterior surface. The texturizing process includes at least one step in which the surface to be texturized is bead blasted or chemically grained, so that the surface roughness of the texturized surface ranges from about 50 ?-inch Ra to about 1,000 ?-inch Ra.Type: GrantFiled: August 2, 2006Date of Patent: May 8, 2012Assignee: Applied Materials, Inc.Inventors: Soo Young Choi, John M. White, Beom Soo Park, Dong Kil Yim
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Patent number: 8174400Abstract: Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.Type: GrantFiled: March 7, 2011Date of Patent: May 8, 2012Assignee: Applied Materials, Inc.Inventors: Beom Soo Park, Soo Young Choi, John M. White, Hong Soon Kim, James Hoffman
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Publication number: 20120082802Abstract: A method for preventing particle contamination within a processing chamber is disclosed. Preheating the substrate within the processing chamber may cause a thermophoresis effect so that particles within the chamber that are not adhered to a surface may not come to rest on the substrate. One method to increase the substrate temperature is to plasma load the substrate. Plasma loading comprises providing an inert gas plasma to the substrate to heat the substrate. Another method to increase the substrate temperature is high pressure loading the substrate. High pressure loading comprises heating the substrate while increasing the chamber pressure to between about 1 Torr and about 10 Torr. By rapidly increasing the substrate temperature within the processing chamber prior to substrate processing, particle contamination is less likely to occur.Type: ApplicationFiled: December 9, 2011Publication date: April 5, 2012Inventors: Dong-Kil YIM, John M. WHITE, Soo Young CHOI, Beom Soo PArk, Han Byoul KIM, Jin Man HA
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Patent number: 8147614Abstract: Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.Type: GrantFiled: June 6, 2010Date of Patent: April 3, 2012Assignee: Applied Materials, Inc.Inventors: John M. White, Carl Sorensen, Robin Tiner, Beom Soo Park, Soo Young Choi