Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

Abstract: Embodiments provided herein describe systems and method for processing substrates. A substrate is provided. A showerhead is positioned above the substrate. The showerhead includes a plurality of injection ports, at least one isolation channel, and at least one exhaust port on a bottom surface thereof. The at least one isolation channel separates the plurality of injection ports into two or more sections. The at least one exhaust port is positioned within the at least one isolation channel. The plurality of injection ports are not in fluid communication with the at least one exhaust port within the showerhead. At least one processing fluid is caused to be delivered from the plurality of injection ports onto the substrate. At least some of the at least one processing fluid is caused to be removed from the substrate through the at least one exhaust port.

Abstract: Embodiments provided herein provide systems and methods for wet processing substrates with a rotating splash shield. The systems include a fluid dispenser configured to dispense a processing fluid. A substrate support configured to support and rotate a substrate is also included. The substrate support is disposed such that the processing fluid dispensed by the fluid dispenser flows onto the substrate. A splash shield is positioned on at least one side of the substrate support and is configured to rotate. The splash shield has an upper portion extending above an upper surface of the substrate and a lower portion extending below a lower surface of the substrate.

Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.

Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.

Abstract: A substrate-handling robot which serves a processing tool such as a plating tool may be automatically controlled by a controller to perform a self-calibration procedure. As part of the procedure, an end effector of the robot is moved to interact with sensors provided on a calibration fixture that is positioned in a substrate placement location for which the calibration procedure is performed. The calibration fixture may have an opening formed therein to allow movement of the robot end effector within the calibration fixture. Sensor light beams generated by the sensors may interact with the end effector during the automatic calibration process so as to determine calibration data for the substrate placement location.

Abstract: A substrate-handling robot which serves a processing tool such as a plating tool may be automatically controlled by a controller to perform a self-calibration procedure. As part of the procedure, an end effector of the robot is moved to interact with sensors provided on a calibration fixture that is positioned in a substrate placement location for which the calibration procedure is performed. The calibration fixture may have an opening formed therein to allow movement of the robot end effector within the calibration fixture. Sensor light beams generated by the sensors may interact with the end effector during the automatic calibration process so as to determine calibration data for the substrate placement location.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.

Abstract: A substrate-handling robot which serves a processing tool such as a plating tool may be automatically controlled by a controller to perform a self-calibration procedure. As part of the procedure, an end effector of the robot is moved to interact with sensors provided on a calibration fixture that is positioned in a substrate placement location for which the calibration procedure is performed. The calibration fixture may have an opening formed therein to allow movement of the robot end effector within the calibration fixture. Sensor light beams generated by the sensors may interact with the end effector during the automatic calibration process so as to determine calibration data for the substrate placement location.

Abstract: Embodiments of the invention generally provide a substrate spin rinse dry cell that may be used in a semiconductor processing system. The cell generally includes a cell body defining an interior processing volume, and a rotatable substrate support member positioned in the processing volume. The rotatable substrate support member includes a rotatable hub assembly having a plurality of upstanding substrate engaging members extending therefrom, and a central member positioned radially inward of the plurality of upstanding substrate engaging members, the central member having a plurality of backside fluid dispensing nozzles and at least one backside gas dispensing nozzle positioned thereon.

Abstract: In a first aspect, a rotary vacuum-chuck is provided that may hold a substrate such as a silicon wafer for rotation. The vacuum-chuck includes a hollow rotary shaft and a chuck mounted on the hollow rotary shaft and having a surface adapted to support a substrate. The chuck has one or more openings in fluid communication with the hollow rotary shaft. A venturi is formed near an end of the hollow rotary shaft to apply vacuum to the hollow rotary shaft and the openings in the chuck surface. No seal is required between the end of the hollow rotary shaft and a surrounding stationary block.

Abstract: A method and an apparatus is provided that may fix a point at which an etchant or a fluid sprayed from a nozzle impacts a substrate. By fixing a first angle measured between the inventive nozzle and a substrate support and fixing a process height of a nozzle relative to a substrate support, a second angle, measured between a fluid sprayed from the nozzle and a line tangent to a substrate support, may vary without affecting the fluid impact point.

Abstract: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

Abstract: An integrated semiconductor substrate bevel cleaning system that enables transfer of substrates through the bevel cleaner either with or without substrate processing within the bevel cleaner. The invention provides an integrated bevel cleaning apparatus comprising a transfer position, a rinsing position and an etching position.

Abstract: An apparatus and associated method for securing a wafer to a SRD spider, the SRD spider has a plurality of spider arms. The apparatus includes a plurality of spaced surfaces disposed on a distal end of one of the spider arms, each of the surfaces being spaced perpendicularly from the longitudinal axis of the spider arm. In one aspect, the two surfaces are positioned to limit production of a wedging force between that spaced surface and the wafer. In one embodiment, a post at least partially defines each one of the plurality of spaced surfaces.

Abstract: In a first aspect, a rotary vacuum-chuck is provided that may hold a substrate such as a silicon wafer for rotation. The vacuum-chuck includes a hollow rotary shaft and a chuck mounted on the hollow rotary shaft and having a surface adapted to support a substrate. The chuck has one or more openings in fluid communication with the hollow rotary shaft. A venturi is formed near an end of the hollow rotary shaft to apply vacuum to the hollow rotary shaft and the openings in the chuck surface. No seal is required between the end of the hollow rotary shaft and a surrounding stationary block.

Abstract: A wafer chuck comprises a wafer chucking surface, a fixable rotary which allows the wafer chucking surface to rotate to adjust and fix pitch, and a planar joint which allows the wafer chucking surface to translate and fix position in order to center the wafer chucking surface with respect to another surface. An inventive assembly comprises a wafer chucking surface, and a wafer exchange surface, opposite the wafer chucking surface. The wafer exchange surface is mounted via a fixable rotary joint and a planar joint and allows the wafer exchange surface to rotate and to translate so as to fix the pitch and position of the wafer exchange surface to level and center the wafer exchange surface relative to the wafer chucking surface. Alternatively the fixable rotary and/or planar joints may be coupled to the wafer chucking surface. A calibration jig having rough and fine centering pins may be included.

Abstract: A wafer chuck is provided, having a wafer chucking surface, and a plunger consisting either of a body that extends at least partially along the outer perimeter of the wafer chucking surface, or a plurality of pins positioned outside the wafer chucking surface. The plunger may be normally biased to extend past the wafer chucking surface and/or may be adapted not to rotate with the wafer chucking surface. The plunger bias may be achieved via one or more vacuum bellows.

Abstract: In a first aspect, a system is provided that includes (1) a substrate support adapted to hold and rotate a substrate; (2) a source of fluid adapted to supply fluid to a surface of a substrate held by the substrate support; and (3) a shield positioned to capture fluid supplied by the source of fluid and displaced from a substrate held and rotated by the substrate support. The shield includes a radiused surface adapted to carry the captured fluid away from the substrate held by the substrate support. Apparatus and methods in accordance with this and other aspects also are provided.