Abstract: An optical projection unit comprising a first optical element module and at least one second optical element module is provided. The first optical element module comprises a first housing unit and at least a first optical element, the first optical element being received within the first housing unit and having an optically used first region defining a first optical axis. The at least one second optical element module is located adjacent to the first optical element module and comprises at least one second optical element, the second optical element defining a second optical axis of the optical projection unit. The first housing unit has a central first housing axis and an outer wall extending in a circumferential direction about the first housing axis. The first optical axis is at least one of laterally offset and inclined with respect to the first housing axis. Furthermore, the first housing axis is substantially collinear with the second optical axis.

Abstract: An optical arrangement for immersion lithography, having at least one component (1) to which a hydrophobic coating (6, 7) is applied, the hydrophobic coating (6, 7) being exposed to UV radiation during operation of a projection lens, and the at least one component (1) being wetted at least in part by an immersion fluid during operation of the projection lens. The hydrophobic coating (6, 7) includes at least one UV-resistant layer (6) that absorbs and/or reflects UV radiation at a wavelength of less than 260 nm.

Abstract: An optical arrangement includes a multiplicity of optical elements and a carrier structure which carries the optical elements. The carrier structure is composed of at least two releasably interconnected modules. Each module is composed of at least one carrier structure subelement. A subhousing is produced by a multiplicity of carrier structure subelements and/or modules. The subhousing has a geometry that varies, at least in regions, in correspondence to a usable beam path in the projection exposure apparatus, the usable beam path being defined as an envelope of all light bundles which can propagate from all field points in a field plane to an image plane of the projection exposure apparatus. A projection exposure apparatus for EUV lithography includes such an optical arrangement.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: There is provided an optical imaging device, in particular for microlithography, comprising at least one optical element and at least one holding device associated to the optical element (109), wherein the holding device holds the optical element and a first part (109.1) of the optical element contacts a first atmosphere and a second part (109.2) of the optical element at least temporarily contacts a second atmosphere. There is provided a reduction device at least reducing dynamic fluctuations in the pressure difference between the first atmosphere and the second atmosphere.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: A lithographic apparatus includes a projection system configured to project a patterned beam of radiation onto a target portion of a substrate. The projection system includes a first gas-conditioned sub-environment and a second gas-conditioned sub-environment. The apparatus includes a gas control unit configured to control the feeding of conditioned gas into the first sub-environment and into the second sub-environment via the first sub-environment so as to prevent contamination from the second sub-environment to the first sub-environment. The apparatus includes a gate configured to leak the conditioned gas at a rate from the second sub-environment to ambient atmosphere, and a detector configured to detect at least one property of the second gas-conditioned environment.

Abstract: Replacement devices for at least one replaceable optical element mounted at least indirectly in a lithographic projection exposure apparatus are disclosed. Lithography objectives and illumination systems are also disclosed. Methods for positioning a replaceable optical element within a lithographic projection exposure apparatus of this type, and methods for replacing a replaceable optical element within a lithographic projection exposure apparatus via a replacement device are also disclosed.

Abstract: There is provided an optical imaging device, in particular for microlithography, comprising at least one optical element and at least one holding device associated to the optical element (109), wherein the holding device holds the optical element and a first part (109.1) of the optical element contacts a first atmosphere and a second part (109.2) of the optical element at least temporarily contacts a second atmosphere. There is provided a reduction device at least reducing dynamic fluctuations in the pressure difference between the first atmosphere and the second atmosphere.

Abstract: An optical imaging device (PL), in particular an objective for semiconductor lithography, is provided with at least one system diaphragm. The system diaphragm comprises a multiplicity of mobile plates, which are rotatably mounted. The plates have a spherical curvature.

Abstract: There is provided an optical element module comprising a first optical element and an optical element holder. The first optical element has a first coefficient of thermal expansion. The optical element holder holds the first optical element and has a second coefficient of thermal expansion, the second coefficient of thermal expansion being adapted to the first coefficient of thermal expansion. The optical element is directly contacting the optical element holder in a wide contact area. The contact area is defined by a first contact surface of the first optical element and a second contact surface of the optical element holder, wherein the second contact surface matches the first contact surface. Thus, favorable rigidity and deformation behavior is provided.

Abstract: An optical system (10), in particular a projection objective (12), for microlithography, has an optical axis and at least one optical correction arrangement (44), which has a first optical correction element (48) and at least one second optical correction element, wherein the first correction element is provided with a first aspherical surface contour, and wherein the second correction element is provided with a second aspherical surface contour, wherein the first surface contour and the second surface contour add up at least approximately to zero, wherein the correction arrangement (44) has at least one drive for movement of at least one of the two correction elements. In this case, at least one of the two correction elements can rotate about a rotation axis which is at least approximately parallel to the optical axis, and the at least one drive is a rotary drive for rotation of one or both of the correction elements about the rotation axis.

Abstract: There is provided an optical element comprising an optical element body, a reflecting area and an optical passageway. The optical element body defines an axis of rotational symmetry. The reflecting area is disposed on the optical element body and adapted to be optically used in an exposure process. The optical passageway is arranged within the optical element body and allows light to pass the optical element body, the optical passageway being arranged eccentrically with respect to the axis of rotational symmetry.

Abstract: A arrangement serves for the adjustment of an optical element (1), in particular of a lens in an optical system, in particular in a projection lens system for semiconductor lithography. The optical element (1) is mounted in a mount (3) by means of a number of bearing feet (2) distributed over the circumference of the optical element (1) and is selectively deformable by actuators (5). At least some of the bearing feet (2) are engaged by the actuators (5) in a region of the respective bearing foot (2) in such a way that the respective bearing foot (2) can be displaced in the direction of the optical axis (7).

Abstract: An immersion lithography objective has a housing in which at least one first optical element is arranged, a second optical element, which follows the first optical element in the direction of the optical axis of the objective, an immersion medium that adjoins the second optical element being located downstream of the latter in the direction of the optical axis, and a retaining structure for the second optical element. The retaining structure has a greater stiffness in the direction of the optical axis than in a direction perpendicular to the optical axis.

Abstract: The disclosure relates to an optical system, such as a projection exposure apparatus for semiconductor lithography, including a manipulable correction arrangement for reducing image aberrations. In some embodiments, the system includes at least one manipulator configured to reduce image aberrations. The manipulator can include at least one optical element which can be manipulated by at least one actuator. The manipulator can be formed in changeable fashion together with an actuator.

Abstract: An optical arrangement for immersion lithography, having at least one component (1) to which a hydrophobic coating (6, 7) is applied, the hydrophobic coating (6, 7) being exposed to UV radiation during operation of a projection lens, and the at least one component (1) being wetted at least in part by an immersion fluid during operation of the projection lens. The hydrophobic coating (6, 7) includes at least one UV-resistant layer (6) that absorbs and/or reflects UV radiation at a wavelength of less than 260 nm.

Abstract: Liquid is supplied to a space between the projection system of a lithographic apparatus and a substrate. A flow of gas towards a vacuum inlet prevents the humid gas from escaping to other parts of the lithographic apparatus. This may help to protect intricate parts of the lithographic apparatus from being damaged by the presence of humid gas.

Abstract: A microlithographic projection exposure apparatus contains an illumination system for generating projection light and a projection lens with which a reticle that is capable of being arranged in an object plane of the projection lens can be imaged onto a light-sensitive layer that is capable of being arranged in an image plane of the projection lens. The projection lens is designed for immersion mode, in which a final lens element of the projection lens on the image side is immersed in an immersion liquid. A terminating element that is transparent in respect of the projection is fastened between the final lens element on the image side and the light-sensitive layer.

Abstract: An optical projection unit comprising a first optical element module and at least one second optical element module is provided. The first optical element module comprises a first housing unit and at least a first optical element, the first optical element being received within the first housing unit and having an optically used first region defining a first optical axis. The at least one second optical element module is located adjacent to the first optical element module and comprises at least one second optical element, the second optical element defining a second optical axis of the optical projection unit. The first housing unit has a central first housing axis and an outer wall extending in a circumferential direction about the first housing axis. The first optical axis is at least one of laterally offset and inclined with respect to the first housing axis. Furthermore, the first housing axis is substantially collinear with the second optical axis.