Abstract: A semiconductor die includes: a semiconductor substrate; a first contact pad structure above the semiconductor substrate, the first contact pad structure including a metal contact pad configured for electrical contact and a metal layer adjoining an underside of the metal contact pad and jutting out beyond an edge of the metal contact pad; and a first optical detection marker in a periphery of the first contact pad structure and having a different contrast than the metal contact pad. The first optical detection marker includes a region of the metal layer that is adjacent to the edge of the metal contact pad and unobstructed by the metal contact pad so as to be optically visible in a plan view of the semiconductor die. A method of producing the semiconductor die is also described.

Abstract: A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Abstract: An optoelectronic assembly includes: a plurality of semiconductor light sources, each one of the semiconductor light sources including a plurality of pads; and a driver device configured to drive each one of the semiconductor light sources. For each pad of each semiconductor light source, the driver device has a corresponding pad facing the pad of the semiconductor light source to form a pair of connectable pads. For each pair of connectable pads, a first pad of the pair of connectable pads has a first shape and a second pad of the pair of connectable pads has a second shape complementary to the first shape such that the first pad and the second pad form a mated connection when brought into contact with one another. Corresponding driver device and semiconductor light sources are also described.

Abstract: A method of forming an aluminum oxide layer is provided. The method includes providing a metal surface including at least one metal of a group of metals, the group of metals consisting of copper, aluminum, palladium, nickel, silver, and alloys thereof. The method further includes depositing an aluminum oxide layer on the metal surface by atomic layer deposition, wherein a maximum processing temperature during the depositing is 280° C., such that the aluminum oxide layer is formed with a surface having a liquid solder contact angle of less than 40°.

Abstract: A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Abstract: A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Abstract: Various embodiments provide a semiconductor chip, wherein the semiconductor chip comprises a first contact area and a second contact area both formed at a frontside of the semiconductor chip; a passivation layer arranged at the frontside between the first contact area and the second contact area; and a contact stack formed over the frontside of the semiconductor chip and comprising a plurality of layers, wherein at least one layer of the plurality of layers is removed from the passivation layer and boundary regions of the contact areas being adjacent to the passivation layer and wherein at least one another layer of the plurality of different layer is present in the boundary region of the contact areas adjoining the passivation layer.

Abstract: A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

Abstract: A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Abstract: A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor substrate that has a conductive structure, and forming a precursor auxiliary layer stack on a first section of the conductive structure. The precursor auxiliary layer stack has a precursor adhesion layer and a precursor barrier layer between the precursor adhesion layer and the conductive structure. The precursor adhesion layer contains a second metal. The method further includes forming, on the precursor auxiliary layer stack, a metal structure containing a first metal and forming, from portions of the precursor auxiliary layer stack an adhesive layer containing the first and second metals.

Abstract: An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided.

Abstract: A semiconductor device includes a structured interlayer on a substrate, a structured power metallization on the structured interlayer, and a barrier on the structured power metallization. The barrier is configured to prevent diffusion of at least one of water, water ions, sodium ions, potassium ions, chloride ions, fluoride ions, and sulphur ions towards the structured power metallization. A first defined edge of the structured interlayer faces the same direction as a first defined edge of the structured power metallization and extends beyond the first defined edge of the structured power metallization by at least 0.5 microns. The structured interlayer has a compressive residual stress at room temperature and the structured power metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer. The first defined edge of the structured power metallization has a sidewall which slopes inward.

Abstract: A semiconductor device and method is disclosed. In one embodiment, the semiconductor device comprises a semiconductor die comprising a first surface and a second surface opposite to the first surface, a first metallization layer disposed on the first surface of the semiconductor die, a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb, and a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer.

Abstract: A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. An isolation region separates the contact pads disposed at the major surface. Adjacent contact pads are electrically isolated from one another by a portion of the isolation region. Reflective structures are disposed between the upper metal level and the contact pads, where each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pad.

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having a defined edge, and a structured metallization on the structured interlayer and also having a defined edge. The defined edge of the structured interlayer faces the same direction as the defined edge of the structured metallization. The defined edge of the structured interlayer extends beyond the defined edge of the structured metallization by at least 0.5 microns so that the defined edge of the structured metallization terminates before reaching the defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature and the structured metallization generates a tensile stress at room temperature that is at least partly counteracted by the compressive residual stress of the structured interlayer.

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having defined edges, and a structured metallization on the structured interlayer and also having defined edges. Each defined edge of the structured interlayer neighbors one of the defined edges of the structured metallization and runs in the same direction as the neighboring defined edge of the structured metallization. Each defined edge of the structured interlayer extends beyond the neighboring defined edge of the structured metallization by at least 0.5 microns so that each defined edge of the structured metallization terminates before reaching the neighboring defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature.

Abstract: A semiconductor device includes a substrate, a structured interlayer on the substrate and having defined edges, and a structured metallization on the structured interlayer and also having defined edges. Each defined edge of the structured interlayer neighbors one of the defined edges of the structured metallization and runs in the same direction as the neighboring defined edge of the structured metallization. Each defined edge of the structured interlayer extends beyond the neighboring defined edge of the structured metallization by at least 0.5 microns so that each defined edge of the structured metallization terminates before reaching the neighboring defined edge of the structured interlayer. The structured interlayer has a compressive residual stress at room temperature.