Abstract: Disclosed are an arc discharge detection method and device for a battery system, and a battery energy storage system. The arc discharge detection method for a battery system comprises: sampling a terminal voltage and a charging and discharging current of a battery system, sampling the terminal voltage of the battery system twice and calculating a first voltage difference value, and sampling the terminal voltage of the battery system and a terminal voltage of an electricity load and calculating a second voltage difference value; performing time domain and frequency domain analysis on the sampled data to obtain corresponding time domain and frequency domain feature values; and on the basis of the time domain and frequency domain feature values and the first and second voltage difference values, determining whether arc discharge features are met, so as to determine whether an arc discharge fault occurs in the battery system.

Abstract: Provided are a non-aqueous electrolyte and a preparation method thereof, and a secondary battery and an electric apparatus containing the same. The non-aqueous electrolyte contains a non-aqueous solvent and lithium ions, first cations, and first anions dissolved therein, where the first cation is a metal cation Men+ other than the lithium ion, n representing a chemical valence of the metal cation; the first anion is a difluoroxalate borate anion DFOB?; mass concentration of the first cations in the non-aqueous electrolyte is D1 ppm, and mass concentration of the first anions in the non-aqueous electrolyte is D2 ppm, both based on total mass of the non-aqueous electrolyte; and the non-aqueous electrolyte satisfies that D1 is 0.5 to 870 and that D1/D2 is 0.02 to 2. The non-aqueous electrolyte in this application enables the secondary battery to have good cycling performance, safety performance, and kinetic performance.

Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: A semiconductor device includes a fin structure disposed over a substrate. The semiconductor device includes a first interfacial layer straddling the fin structure. The semiconductor device includes a gate dielectric layer extending along sidewalls of the fin structure. The semiconductor device includes a second interfacial layer overlaying a top surface of the fin structure. The semiconductor device includes a gate structure straddling the fin structure. The first interfacial layer and the gate dielectric layer are disposed between the sidewalls of the fin structure and the gate structure.

Abstract: Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a first gate structure and a second gate structure formed on a substrate, wherein the first gate structure includes a first work function metal having a first material, and the second gate structure includes a second work function metal having a second material, the first material being different from the second material, wherein the first gate structure further includes a gate dielectric layer, a self-protective layer having metal phosphate, and the first work function metal on the self-protective layer.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: A lamp controller, comprising a circuit board, a main housing, a plug-in socket and an output plug-in component, wherein the main housing consists of an upper housing and a lower housing, the upper housing and/or the lower housing are provided with cavities, after the upper housing and the lower housing are combined, an accommodating cavity for assembling the circuit board is formed between the upper housing and the lower housing, the axial direction of the plug-in socket is not parallel to the longitudinal direction of the main housing, and the output plug-in component is fixed with the plug-in socket, wherein the controller further comprises an output connecting terminal, the output connecting terminal is fixed on the circuit board, the circuit board is provided with a yielding opening, a part of the output plug-in component is located in the cavity of the upper housing or the lower housing.

Abstract: An interconnect structure, which may be used for example in a semiconductor device, is disclosed. The interconnect structure includes a contact layer made of a metal; one or more dielectric layers on the contact layer, and a deposited layer made of an insulating material. The interconnect structure further includes a trench through the one or more dielectric layers so that a sidewall surface of the trench is formed by the one or more dielectric layers and a bottom surface of the trench is formed by a portion of the contact layer. The deposited layer is in the trench and a thickness of the insulating material on the sidewall surface of the trench is at least 2.1 times greater than a thickness of the insulating material on the bottom surface of the trench.

Abstract: Provided are a lane line recognition method, an electronic device and a storage medium, relating to a technical field of artificial intelligence, in particular to technical fields of intelligent transportation, automatic driving and deep learning. The lane line recognition method includes: extracting a basic feature of an original image; recognizing at least one lane line node in the original image by using the basic feature of the original image; extracting a local feature from the basic feature of the original image by using the at least one lane line node; fusing the basic feature and the local feature; and recognizing a lane line in the original image based on a fused result.

Abstract: An alumina-based ceramic tool material with low thermal expansion and a preparation process thereof, accordingly, the ceramic tool material may have both the high hardness of alumina ceramics after the hot pressing sintering, and reduces the thermal expansion coefficient of the overall ceramic material by adding the Sc2W3O12 as the negative thermal expansion phase, which improves the thermal shock resistance of ceramic tools in high-speed cutting engineering and meets the requirements of large temperature range during the machining of nickel-based superalloys. Moreover, the composite material does not use metal binder and has strong thermal stability even in the high-speed machining under extreme heat-force-chemistry coupling, so it has a high machining compatibility for nickel-based superalloys.

Abstract: A low-oxygen heating-type cigarette assembly, comprising a low-oxygen heating-type smoking set (B) and a low-oxygen heating-type cigarette (A). The low-oxygen heating-type smoking set (B) comprises a heating section (4) and a smoke extracting member (2) detachably arranged with the heating section (4), wherein the heating section (4) is provided with a cigarette receiving chamber (4-1), and the smoke extracting member (2) comprises a hollow smoke extracting cone (2-1) and a smoke transmission tube (2-2).

Abstract: The present disclosure relates to an electronic device and its execution method and a computer-readable medium. An electronic device, comprising: a memory having instructions stored thereon; a processor configured to execute instructions stored on the memory to cause the electronic device to perform the following operations: analyzing an original video stream being played to determine start time and duration of a first video stream part to be replaced in the original video stream; retrieving a second video stream part with the same duration; playing the second video stream part in a front end at the determined start time to play the original video stream in a backend; and playing the original video stream in the front end after finishing playing the second video stream part.

Abstract: Herein is described a liquid electrophotographic a printing apparatus comprising: a photoconductor; a liquid electrophotographic ink developer unit for applying liquid electrophotographic ink to the photoconductor; a cleaner roller contactable with the photoconductor, the cleaner roller comprising an open-celled foam material having thereon a coating comprising abrasive particles and a binder. Also described herein is a cleaner roller for cleaning a liquid electrophotographic printing apparatus' photoconductor and a method of operating a liquid electrophotographic printing apparatus using a cleaner roller described herein.

Abstract: Described here are delivery devices for delivering one or more implants to the body, and methods of using. The delivery devices may deliver implants to a variety of locations within the body, for a number of different uses. In some variations, the delivery devices have a cannula with one or more curved sections. In some variations, a pusher may be used to release one or more implants from the cannula. In some variations, one or more of the released implants may be a self-expanding device. Methods of delivering implants to one or more sinus cavities are also described here.

Abstract: The present disclosure provides the use of acetyltanshinone IIA in the preparation of medicament for treating lung cancer and medicament for treating lung cancer, which falls within the technical field of medicine. This protocol proposes the use of acetyltanshinone IIA in treating lung cancer, especially non-small cell lung cancer (NSCLC), which can antagonize primary and acquired drug resistance of NSCLC cells to epidermal growth factor receptor, tyrosine kinase inhibitor (EGFR TKIs), by using small molecule compound acetyltanshinone IIA. The present disclosure further identifies the molecular target of ATA and elucidates its mechanism of inhibiting the growth of drug-resistant NSCLC cells and tumors. The medicament containing acetyltanshinone IIA is expected to become a multi-target anticancer agent for treating TKI drug-resistant NSCLC.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughness. Consequently, current flow within the channel regions of fins and nanostructured channel structures can be improved, enhancing device performance.

Abstract: An optical calibration tool includes a first body, a light emitter, a light receiver, a second body, and a light reflecting member. The first body has a first engaging port and a second engaging port. The light emitter and the light receiver are disposed in the first body. The second body has a third engaging port and a channel communicated with each other. The third engaging port is configured to selectively engage one of the first engaging port and the second engaging port. When the third engaging port is engaged with the first engaging port, the light emitter is optically coupled to the light reflecting member. When the third engaging port is engaged with the second engaging port, the light receiver is optically coupled to the light reflecting member.

Abstract: An electrical connector includes an insulating housing, a number of terminals and a lossy member. The terminals include a number of ground terminals and a number of signal terminals. The ground terminals and the signal terminals are set adjacently to each other but do not contact each other. The ground terminals do not directly contact the lossy member. As a result, installation consistency of the ground terminals can be achieved, thereby improving the electrical performance of the electrical connector.

Abstract: An interface connector, comprising a housing, a first heat dissipating member, and a second heat dissipating member. A first accommodating space and a second accommodating space are disposed in the housing. The first accommodating space is adjacent to the second accommodating space. The first accommodating space accommodates a first mating connector. The second accommodating space accommodates a second mating connector. The first heat dissipating member is disposed at the outside of the housing and passes through the housing. The first heat dissipating member extends into the first accommodating space to be connected to the first mating connector. The second heat dissipating member is disposed in the housing. The second heat dissipating member extends into the second accommodating space to be connected to the second mating connector.