Abstract: An amusement ride system includes: a shooting device adapted to shoot a projectile; an aiming facility operable by a user to aim the shooting device; and a triggering device operable by the user to fire the shooting device. The user rides the vehicle, aims the shooting device, and fires the device to shoot the projectile. A method for a ride includes: providing a shooting device; providing a plurality of projectiles; and aiming and shooting the projectiles utilizing the shooting device.

Abstract: A NOR emulating device using a controller and NAND memories can be used in a computer system in placed of the main memory or in place of the BIOS NOR memory. Thus, the emulating device can function as a bootable memory. In addition, the device can act as a cache to the hard disk drive. Further, with the addition of an MP3 player controller into the device, the device can function as a stand alone audio playback device, even while the PC is turned off or is in a hibernating mode. Finally with the MP3 player controller, the device can access additional audio data stored on the hard drive, again with the PC in an off mode or a hibernating mode. Finally, the device can function to operate the disk drive, even while the PC is off or is in a hibernating mode, and control USB ports attached thereto.

Abstract: A NOR emulating device using a controller and NAND memories can be used in a computer system in placed of the main memory or in place of the BIOS NOR memory. Thus, the emulating device can function as a bootable memory. In addition, the device can act as a cache to the hard disk drive. Further, with the addition of an MP3 player controller into the device, the device can function as a stand alone audio playback device, even while the PC is turned off or is in a hibernating mode. Finally with the MP3 player controller, the device can access additional audio data stored on the hard drive, again with the PC in an off mode or a hibernating mode. Finally, the device can function to operate the disk drive, even while the PC is off or is in a hibernating mode, and control USB ports attached thereto.

Abstract: A removable card for use with a mobile wireless communication device has a processor and a non-volatile memory, connected to the processor. The memory has programming code stored configured to be executed by the processor and is operable in one of two modes. In a first mode the card is connected to the device with the card storing information received wirelessly by the device from the Internet. In a second mode the card is connected to a network portal device, which is connected to the Internet, with the card storing information received through the network portal device from the Internet. In another embodiment, the removable card has electrical connections for connecting to a mobile wireless communicating device for use by a user to connect to the Internet. The memory has two portions: a first portion and a second portion with the partitioning being alterable. The processor restricts access to the first portion by the user, while grants access to the second portion to the user.

Abstract: The present invention relates to a media processing system that comprises a bus for communicating digital signals thereon with a media processor connected to the bus, for processing signals supplied thereon. The system further has a display device connected to the bus for displaying digitized images thereon, received from the bus. The system has an audio transmitter connected to the bus, for wirelessly transmitting audio digital signals from the bus. The system further has a connectable memory for connecting to the bus and for supplying signals representing digitized images and audio digital signals to the bus. Finally the system has a receiver to receive encoded digitized images or audio digital signals for supplying the received signals to the bus for storage in the memory.

Abstract: A NOR emulating device using a controller and NAND memories can be used in a computer system in placed of the main memory or in place of the BIOS NOR memory. Thus, the emulating device can function as a bootable memory. In addition, the device can act as a cache to the hard disk drive. Further, with the addition of an MP3 player controller into the device, the device can function as a stand alone audio playback device, even while the PC is turned off or is in a hibernating mode. Finally with the MP3 player controller, the device can access additional audio data stored on the hard drive, again with the PC in an off mode or a hibernating mode. Finally, the device can function to operate the disk drive, even while the PC is off or is in a hibernating mode, and control USB ports attached thereto.

Abstract: A memory device has a controller. The controller has a first address bus for receiving a RAM address signals, a first data bus for receiving RAM data signals, and a first control bus for receiving RAM control signals. The controller further has a second address bus for interfacing with a volatile RAM memory, a second data bus for interfacing with the volatile RAM memory, and a second control bus for interfacing with the volatile RAM memory. The controller further has a third address/data bus for interfacing with a non-volatile NAND memory, and a third control bus for interfacing with non-volatile NAND memory. The memory device further having a RAM memory connected to said second address bus, said second data bus, and said second control bus. The memory device further having a non-volatile NAND memory connected to the third address/data bus and to the third control bus.

Abstract: A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.

Abstract: A method of forming a memory device (and the resulting device) by forming an electron trapping dielectric material over a substrate, forming conductive material over the dielectric material, forming a spacer of material over the conductive material, removing portions of the dielectric material and the conductive material to form segments thereof disposed underneath the spacer of material, forming first and second spaced-apart regions in the substrate having a second conductivity type different from that of the substrate, with a channel region extending between the first and second regions, with the segments of the dielectric and first conductive materials being disposed over a first portion of the channel region for controlling a conductivity thereof, and forming a second conductive material over and insulated from a second portion of the channel region for controlling a conductivity thereof.

Abstract: A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region.

Abstract: A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region. A method of programming the cell comprises the steps of creating an inversion layer in the second portion of the channel.

Abstract: A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.

Abstract: A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region.

Abstract: A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.

Abstract: A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.

Abstract: A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region.

Abstract: A non-volatile memory cell has a single crystalline semiconductive material, such as single crystalline silicon, of a first conductivity type. A first and a second region each of a second conductivity type, different from the first conductivity type, spaced apart from one another is formed in the semiconductive material. A channel region, having a first portion, and a second portion, connects the first and second regions for the conduction of charges. A dielectric is on the channel region. A floating gate, which can be conductive or non-conductive, is on the dielectric, spaced apart from the first portion of the channel region. The first portion of the channel region is adjacent to the first region, with the first floating gate having generally a triangular shape. The floating gate is formed in a cavity. A gate electrode is capacitively coupled to the first floating gate, and is spaced apart from the second portion of the channel region.

Abstract: A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region. A method of programming the cell comprises the steps of creating an inversion layer in the second portion of the channel.

Abstract: A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.

Abstract: A self aligned method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The drain region is formed underneath the trench. An electrically conductive floating gate is formed over and insulated from a portion of the channel region, with a horizontally oriented edge extending therefrom. An electrically conductive control gate is formed having a first portion disposed in the trench and a second portion disposed adjacent to and insulated from the floating gate edge.