Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

Abstract: Memory devices and methods of manufacturing memory devices are provided. A plasma enhanced chemical vapor deposition (PECVD) method to form a memory cell film stack having more than 50 layers as an alternative for 3D-NAND cells is described. The memory stack comprises alternating layers of a first material layer and a second material layer.

Abstract: Exemplary methods of semiconductor processing may include providing a boron-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The carbon-containing precursor may be characterized by a carbon-carbon double bond or a carbon-carbon triple bond. The methods may include thermally reacting the boron-containing precursor and the carbon-containing precursor at a temperature below about 650° C. The methods may include forming a boron-and-carbon-containing layer on the substrate.

Abstract: Methods of forming carbon polymer films are disclosed. Some methods are advantageously performed at lower temperatures. The substrate is exposed to a first carbon precursor to form a substrate surface with terminations based on the reactive functional groups of the first carbon precursor and exposed to a second carbon precursor to react with the surface terminations and form a carbon polymer film. Processing tools and non-transitory memories to perform the process are also disclosed.

Abstract: Hydrogen free (low-H) silicon dioxide layers are disclosed. Some embodiments provide methods for forming low-H layers using hydrogen-free silicon precursors and hydrogen-free oxygen sources. Some embodiments provide methods for tuning the stress profile of low-H silicon dioxide films. Further, some embodiments of the disclosure provide oxide-nitride stacks which exhibit reduced stack bow after anneal.

Abstract: An exemplary method may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The method may also include forming a plasma within the processing region of the semiconductor processing chamber from the boron-containing precursor. The method may further include depositing a boron-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The boron-containing material may include greater than 50% of boron. In some embodiments, the boron-containing material may include substantially all boron. In some embodiments, the method may further include delivering at least one of a germanium-containing precursor, an oxygen-containing precursor, a silicon-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, and/or a nitrogen-containing precursor to the processing region of the semiconductor processing chamber.

Abstract: Methods of etching film stacks to form gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.

Abstract: Compiling source code objects to improve efficiency of compiling is described herein. The compiling includes determining, by a compiler, an object type of a to-be-compiled object in source code. A counter is set for the to-be-compiled object. When the object type of the to-be-compiled object is an object type that can be operated by only one thread at one moment, the compiler sets a counter counting rule for the counter of the to-be-compiled object.

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

Abstract: The present invention provides multispecific Fab fusion proteins (MSFP) that specifically bind to CD3 and EpCAM. The present invention further provides uses of the MSFPs for the preparation of pharmaceutical compositions, methods of treating cancer, and kits comprising the MSFPs. Also provided are anti-EpCAM antibodies or antigen-binding fragments thereof.

Abstract: Embodiments described herein generally relate to methods of processing a substrate comprising positioning a substrate in a processing volume of a processing chamber. The substrate includes a patterned surface having a plurality of features. Individual ones of the plurality of features are defined by one or more openings formed through a multi-layer stack, and the multi-layer stack includes a chalcogen containing material. The methods further include flowing pulses of a first processing gas into the processing volume. Herein, the first processing gas includes a silicon precursor and a nitrogen precursor. The methods further include igniting and maintaining a plasma of the first processing gas. The methods further include depositing a first silicon nitride layer onto the patterned surface of the substrate. Furthermore, the methods include depositing of a second silicon nitride layer on the first silicon nitride layer.

Abstract: Compiling source code objects to improve efficiency of compiling is described herein. The compiling includes determining, by a compiler, an object type of a to-be-compiled object in source code. A counter is set for the to-be-compiled object. When the object type of the to-be-compiled object is an object type that can be operated by only one thread at one moment, the compiler sets a counter counting rule for the counter of the to-be-compiled object.

Abstract: Methods of etching film stacks to from gaps of uniform width are described. A film stack is etched through a hardmask. A conformal liner is deposited in the gap. The bottom of the liner is removed. The film stack is selectively etched relative to the liner. The liner is removed. The method may be repeated to a predetermined depth.

Abstract: Methods of depositing a silicon nitride film at low temperatures are discussed. The silicon nitride films of some embodiments are highly conformal, have low etch rates, low atomic oxygen concentrations and/or good hermeticity. The films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize an ALD process comprising a nitrogen precursor, a silicon precursor and a plasma treatment in each cycle. Some embodiments perform the plasma treatment at a lower pressure than the precursor exposures.

Abstract: The present invention provides a method and an apparatus for compiling a source code object, and a computer, and the method includes: determining, by a compiler, an object type of a to-be-compiled object in source code, where a counter is set for the to-be-compiled object; and when the object type of the to-be-compiled object is a type that can be operated by only one thread at one moment, setting, by the compiler, a counter counting rule for the counter of the to-be-compiled object. Using the method, the apparatus and the computer of the present invention may improve efficiency for compiling an object in source code.

Abstract: The present invention provides multispecific Fab fusion proteins (MSFP) that specifically bind to CD3 and EpCAM. The present invention further provides uses of the MSFPs for the preparation of pharmaceutical compositions, methods of treating cancer, and kits comprising the MSFPs. Also provided are anti-EpCAM antibodies or antigen-binding fragments thereof.

Abstract: A method for stabilizing quantum dots is disclosed, wherein the method includes the introduction of a first monomer into a miniemulsion system. In certain embodiments, the first monomer is a crosslinking polymer. In certain embodiments, a second monomer is added to the system to stabilize the quantum dots. In addition, a method of increasing the brightness of the quantum dots by adding a redox initiator system at a low temperature to reduce fluorescence quenching is also disclosed.

Abstract: A method and device for playing audio are provided. The method for playing audio includes the following steps: acquiring audio playing information corresponding to an audio playing instruction when the audio playing instruction is received (S10); determining whether audio data obtained after an audio file corresponding to the audio playing information is decoded is stored in a preset storage location (S20); and if yes, invoking the audio data for audio playing (S30).

Abstract: An image capture device and an image compensating method are provided. The image compensating method is for the image capture device and includes following steps. An image is captured under a current light source. The current light source is detected and a white balance process is executed so as to obtain current gain information of the current light source. A modifying parameter is determined according to the current gain information and reference gain information. The reference gain information is corresponding to a plurality of predefined color temperatures which are different to each other. A first shading compensation table is modified by using the modifying parameter to obtain a second shading compensation table. The image is compensated by using the second shading compensation table so as to generate a compensated image.