Abstract: The subject matter of this specification can be embodied in, among other things, a method that includes separating, from a few mode optical fiber, a collection of backscattered Rayleigh signals based on a vibration of the few mode optical fiber at a vibration frequency at a first location along the few mode optical fiber, separating, from the few mode optical fiber, a collection of backscattered Stokes Raman signals and Anti-Stokes Raman signals based on a temperature of the few mode optical fiber at a second location along the few mode optical fiber, detecting the separated Rayleigh signals and Raman signals, determining, based on detecting the collection of backscattered Rayleigh traces, at least one of the first location, the vibration frequency, and an amplitude of the vibration, and determining, based on the detecting the collection of backscattered Raman signals, the temperature at the second location.

Abstract: Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

Abstract: An illuminating and wireless communication device includes a base; a shell attached to the base and forming a closed chamber; a laser diode located inside the closed chamber and configured to generate visible light; and a photodetector located inside the closed chamber and configured to detect incoming light. A parameter of the generated visible light is modulated to encode information.

Abstract: An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

Abstract: Systems and methods include a method for overcoming optical time domain reflectometry (OTDR) dead zone limitations by using a few-mode fiber (FMF). Optical pulses are transmitted by a transmitter of an OTDR system through a mode MUX/DEMUX into an FMF. Light signals directed by the FMF in a backward direction through the mode MUX/DEMUX are received by the OTDR system through N single-mode fiber (SMF) ports corresponding to N modes in the FMF. Light signals from N?1 dead-zone-free SMF ports are collected by the OTDR system. Losses are measured and faults are located in the FMF based at least on the light signals.

Abstract: A method for measuring thermal diffusivity/conductivity of a microscale sample includes placing a metallic disk atop the sample, and disposing a nanomembrane over the sample and over the metallic disk so that the nanomembrane, so that the metallic disk, the nanomembrane and the sample are in thermal equilibrium with one another. A laser beam is directed to fall onto the nanomembrane over the sample, while a radiation sensor is operated to detect photoluminescent radiation emitted by the nanomembrane in response to the laser beam. A spectral shift in the detected photoluminescent radiation emitted by the nanomembrane is determined, and thermal diffusivity/conductivity is calculated from the determined spectral shift of the photoluminescence.

Abstract: An optical fiber distributed acoustic sensor (DAS) system for detecting a red palm weevil and/or its larvae inside a tree. The system includes an optical fiber that is configured to be placed next to a tree; and a DAS box optically connected to the optical fiber and configured to receive a reflected light from the optical fiber. The DAS box includes electronics that extracts from the reflected light a frequency in a range of [400 Hz, 4 kHz], and sends a message indicating a presence of the red palm weevil and/or its larvae inside the tree.

Abstract: Systems and methods include a number of optical pulses are transmitted by transmitting, by a distributed acoustic sensor (DAS), where the optical pulses are transmitted at an input port associated with a multimode fibers (MMF) used by the DAS, and where the fundamental mode of the MMF is excited. A number of backscattered Rayleigh signals are collected by the DAS. The Rayleigh signals are recorded as an output intensity profile. A position along the MMF that is subject to vibrations and corresponding vibration parameters are determined by analyzing the recorded output intensity profile.

Abstract: Methods, systems, and apparatuses for simultaneous distributed temperature and vibration sensing using a multimode optical fiber (MMF) is disclosed. The distributed temperature and vibration sensing may include a single mode optical fiber (SMF) coupled to an MMF via a connection in which a central axis of the SMF is aligned with a central axis of the MMF. The connections provides of excitation of the fundamental mode within the MMF by light passing from the SMF into the MMF through the connection.

Abstract: Methods of direct growth of high quality group III-V and group III-N based materials and semiconductor device structures in the form of nanowires, planar thin film, and nanowires-based devices on metal substrates are presented. The present compound semiconductor all-metal scheme greatly simplifies the fabrication process of high power light emitters overcoming limited thermal and electrical conductivity of nanowires grown on silicon substrates and metal thin film in prior art. In an embodiment the methods include: (i) providing a metal substrate; (ii) forming a transition metal dichalcogenide (TMDC) layer on a surface of the metal substrate; and (iii) growing a semiconductor epilayer on the transition metal dichalcogenide layer using a semiconductor epitaxy growth system. In an embodiment, the semiconductor device structures can be compound semiconductors in contact with a layer of metal dichalcogenide, wherein the layer of metal dichalcogenide is in contact with a metal substrate.

Abstract: An integrated semiconductor optical amplifier-laser diode (SOA-LD) device includes a laser diode (LD) section fabricated on a substrate, a semiconductor optical amplifier (SOA) section fabricated on the substrate adjacent to the LD section; and a trench formed at least partially between the LD section and SOA section to electrically isolate the LD section and the SOA section while maintaining optical coupling between the LD section and the SOA section.

Abstract: The subject matter of this specification can be embodied in, among other things, a method for removing intermodal distortion that includes receiving a collection of distorted backscattered Rayleigh signals from a collection of modes of an optical fiber, where the collection of distorted backscattered Rayleigh signals are distorted by an intermodal coupling among the collection of modes, receiving a collection of distortion parameters that are descriptive of distortion effects of the intermodal coupling, and determining an undistorted backscattered Rayleigh signal based on the collection of distorted backscattered Rayleigh signals and the collection of distortion parameters.

Abstract: Systems and methods include a number of optical pulses are transmitted by transmitting, by a distributed acoustic sensor (DAS), where the optical pulses are transmitted at an input port associated with a multimode fibers (MMF) used by the DAS, and where the fundamental mode of the MMF is excited. A number of backscattered Rayleigh signals are collected by the DAS. The Rayleigh signals are recorded as an output intensity profile. A position along the MMF that is subject to vibrations and corresponding vibration parameters are determined by analyzing the recorded output intensity profile.

Abstract: The subject matter of this specification can be embodied in, among other things, a method that includes separating, from a few mode optical fiber, a collection of backscattered Rayleigh signals based on a vibration of the few mode optical fiber at a vibration frequency at a first location along the few mode optical fiber, separating, from the few mode optical fiber, a collection of backscattered Stokes Raman signals and Anti-Stokes Raman signals based on a temperature of the few mode optical fiber at a second location along the few mode optical fiber, detecting the separated Rayleigh signals and Raman signals, determining, based on detecting the collection of backscattered Rayleigh traces, at least one of the first location, the vibration frequency, and an amplitude of the vibration, and determining, based on the detecting the collection of backscattered Raman signals, the temperature at the second location.

Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.

Abstract: The subject matter of this specification can be embodied in, among other things, a method for remotely sensing vibration includes transmitting a collection of optical pulses through an optical fiber at a predetermined frequency, detecting a collection of backscattered Rayleigh traces from the optical fiber based on a vibration of the optical fiber at a vibration frequency at a location along the optical fiber, determining a normalized differential trace based on the collection of Rayleigh traces, determining, based on the normalized differential trace, the location in the optical fiber of the vibration, and determining, based on the raw Rayleigh traces, the vibration frequency.

Abstract: The subject matter of this specification can be embodied in, among other things, a method that includes separating, from a few mode optical fiber, a collection of backscattered Rayleigh signals based on a vibration of the few mode optical fiber at a vibration frequency at a first location along the few mode optical fiber, separating, from the few mode optical fiber, a collection of backscattered Stokes Raman signals and Anti-Stokes Raman signals based on a temperature of the few mode optical fiber at a second location along the few mode optical fiber, detecting the separated Rayleigh signals and Raman signals, determining, based on detecting the collection of backscattered Rayleigh traces, at least one of the first location, the vibration frequency, and an amplitude of the vibration, and determining, based on the detecting the collection of backscattered Raman signals, the temperature at the second location.

Abstract: A method for measuring thermal diffusivity/conductivity of a microscale sample includes placing a metallic disk atop the sample, and disposing a nanomembrane over the sample and over the metallic disk so that the nanomembrane, so that the metallic disk, the nanomembrane and the sample are in thermal equilibrium with one another. A laser beam is directed to fall onto the nanomembrane over the sample, while a radiation sensor is operated to detect photoluminescent radiation emitted by the nanomembrane in response to the laser beam. A spectral shift in the detected photoluminescent radiation emitted by the nanomembrane is determined, and thermal diffusivity/conductivity is calculated from the determined spectral shift of the photoluminescence.

Abstract: Example apparatuses are provided for simultaneous generation of high intensity light and modulated light signals at low modulation bias operating characteristics. An example apparatus includes a semipolar or nonpolar GaN-based substrate, a reverse-biased waveguide modulator section, and a forward-biased gain section based on InGaN/GaN quantum-well active regions, wherein the forward-biased gain section is grown on the semipolar or nonpolar GaN-based substrate. Methods of manufacturing the apparatuses described herein are also contemplated and described herein.

Abstract: Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all-metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.