Abstract: Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Abstract: Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

Abstract: An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiO2 layer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiO2 intermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.

Abstract: A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.

Abstract: An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiO2 layer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiO2 intermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.

Abstract: A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes upper and lower barrier layers with quantum well layers therebetween. The quantum well structure is then pre-annealed at a temperature and time that does not induce quantum well intermixing, but does diffuse the point defects closer to the quantum well layer. Finally, the structure is thermally annealed at a higher temperature to induce quantum well intermixing (QWI) in the quantum well structure, which shifts the bandgap energy of the quantum well layer.

Abstract: A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.

Abstract: A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes upper and lower barrier layers with quantum well layers therebetween. The quantum well structure is then pre-annealed at a temperature and time that does not induce quantum well intermixing, but does diffuse the point defects closer to the quantum well layer. Finally, the structure is thermally annealed at a higher temperature to induce quantum well intermixing (QWI) in the quantum well structure, which shifts the bandgap energy of the quantum well layer.

Abstract: The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

Abstract: A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200 ° C. to about 700 ° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.

Abstract: The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions followed by a one step IID (130) to achieve selective area intermixing. This novel, low cost, and simple technique can be applied for the fabrication of PICs in general, and WDM sources in particular. By applying a gray scale mask technique in IID in accordance with the present invention, the bandgap energy of a QW material can be tuned to different degrees across a wafer (14). This enables not only the integration of monolithic multiple-wavelength lasers but further extends to integrate with modulators and couplers on a single chip. This technique can also be applied to ease the fabrication and design process of superluminescent diodes (SLDs) by expanding the gain spectrum to a maximum after epitaxial growth.

Abstract: In a method of manufacturing a photonic integrated circuit having a compound semiconductor structure having a quantum well region, the structure is irradiated using a source of photons to generate defects, the photons having energy (E) at least that of the displacement energy (ED) of at least one element of the compound semiconductor. The structure is subsequently annealed to promote quantum well intermixing. The preferred radiation source is a plasma generated using an electron cyclotron resonance (ECR) system. The structure can be masked in a differential manner to selectively intermix the structure in a spatially controlled manner by controlling the exposure portions of the structure to the source of radiation.