Abstract: Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

Abstract: A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

Abstract: In some embodiments, a system is provided that includes (1) a loading position; (2) a drying position; (3) a movable tank configured to (a) hold at least one substrate; (b) hold a cleaning chemistry so as to expose a substrate within the movable tank to the cleaning chemistry; and (c) translate between the loading position and the drying position; and (4) a drying station located at the drying position and configured to rinse and dry a substrate as the substrate is unloaded from the movable tank when the movable tank is at the drying position. Numerous other aspects are provided.

Abstract: A method and system for polishing a plurality of workpieces is disclosed. The method and system comprises providing a polishing tool with multiple polishing heads; and providing a substrate tray that can hold the plurality of work pieces in a fixed position on a tray underneath the polishing heads. The system and method includes moving the tray within the polisher. Finally, the method and system includes configuring the multiple polishing heads with the appropriate pad/slurry combinations to polish the workpieces and to create a finished polished surface on the plurality of work pieces.

Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad, and a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner.

Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.

Abstract: Embodiments of the invention include systems, methods and apparatus for pre-cleaning a substrate after chemical mechanical planarization processing. Embodiments provide a housing; a chuck assembly configured to securely hold a substrate within the housing; and a buffing pad assembly configured to rotate against the substrate while supported within the housing. The buffing pad assembly includes a buff pad, a compressible sub-pad coupled to the buff pad, and a pad holder coupled to the compressible sub-pad and a buffing motor configured to rotate the buffing pad assembly. Numerous additional aspects are disclosed.

Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.

Abstract: Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.

Abstract: Among other things, a method comprises polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad. The surface of the polishing pad defines one or more grooves separated by one or more partition regions. The one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves. The method also comprises removing material below an initial bottom of the one or more grooves such that a distance between an outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.

Abstract: In some embodiments, a system is provided that includes (1) a loading position; (2) a drying position; (3) a movable tank configured to (a) hold at least one substrate; (b) hold a cleaning chemistry so as to expose a substrate within the movable tank to the cleaning chemistry; and (c) translate between the loading position and the drying position; and (4) a drying station located at the drying position and configured to rinse and dry a substrate as the substrate is unloaded from the movable tank when the movable tank is at the drying position. Numerous other aspects are provided.

Abstract: An example waterfall apparatus includes (1) a first portion of a first width having (a) a first plenum, a second plenum, and a restricted fluid path therebetween; (b) a first coupling surface; and (c) an inlet opening that creates a fluid path between the first coupling surface and the first plenum; and (2) a second portion of a second width larger than the first width and having (a) a second coupling surface; and (b) an inlet aligned with the first portion inlet opening. The first and second coupling surfaces form a slot that extends along at least a portion of a length of the waterfall apparatus and that connects to the second plenum. Fluid introduced into the second portion inlet fills the first plenum, travels through the restricted fluid path to the second plenum, and exits the slot between the first and second portions to form a rinsing fluid waterfall.

Abstract: Embodiments of the present apparatus and methods for post CMP clean. More particularly, embodiments provide apparatus and methods for removing nano sized particles. One embodiment provides a method for cleaning a substrate. The method includes exposing the substrate to a viscoelastic fluid to remove small particles from the substrate. The viscoelastic fluid comprising a viscosity adjustor and an aqueous base.

Abstract: Among other things, a method comprises polishing a surface of a substrate by applying a pressure between the surface of a substrate and a surface of a polishing pad. The surface of the polishing pad defines one or more grooves separated by one or more partition regions. The one or more grooves have an initial depth before the polishing starts and extend from an initial outer surface of the one or more partition regions to an initial bottom of the one or more grooves. The method also comprises removing material below an initial bottom of the one or more grooves such that a distance between an outer surface of the one or more partition regions and a bottom of the one or more grooves remain substantially the same as the initial depth.

Abstract: Embodiments of the invention include systems, methods and apparatus for pre-cleaning a substrate after chemical mechanical planarization processing. Embodiments provide a housing; a chuck assembly configured to securely hold a substrate within the housing; and a buffing pad assembly configured to rotate against the substrate while supported within the housing. The buffing pad assembly includes a buff pad, a compressible sub-pad coupled to the buff pad, and a pad holder coupled to the compressible sub-pad and a buffing motor configured to rotate the buffing pad assembly. Numerous additional aspects are disclosed.

Abstract: In some embodiments, a module is provided that is configured to clean, rinse and dry a substrate. The module includes (1) a tank having an upper tank region positioned above a lower tank region, the upper tank region having (a) an opening through which a substrate is removed from the tank; (b) a first fluid supply configured to supply a first fluid to a surface of a substrate being removed from the tank; and (c) a first suction mechanism, positioned below the first fluid supply, wherein the first suction mechanism is configured to suction fluid supplied from the first fluid supply so as to deter the suctioned fluid from reaching the lower tank region; and (2) a drying vapor supply positioned above the first fluid supply and configured to supply a drying vapor to a surface of a substrate being removed from the tank. Numerous other aspects are provided.

Abstract: A radially expandable stent comprising a plurality of spaced band-like elements and intersecting links is disclosed. The band-like elements have a generally serpentine configuration to provide continuous waves of generally sinusoidal character to each band-like element. The waves are characterized by a plurality of peaks and troughs taking a generally longitudinal direction along the cylinder such that the waves in the band-like elements open as the stent is expanded from a first diameter to a second diameter. The intersecting links are substantially U-shaped and terminate in first and second shanks. The first shank of a link emanates from a region between a peak and trough on a band-like element and the second shank of the link emanates from a region between a peak and trough on an adjacent band-like element.

Abstract: A buff module and method for using the same are provided. In one embodiment, a buff module includes housing having an interior volume, a plurality of drive rollers and a pair of buff heads. The drive rollers are arranged to rotate a substrate within the interior volume on a substantially horizontal axis. The buff heads are disposed in the housing, each buff head rotatable on an axis substantially aligned with the horizontal axis and movable to a position substantially parallel with the horizontal axis.

Abstract: An apparatus for drying of wet substrates in a post CMP cleaning apparatus is provided. The apparatus provides a waterfall or shallow reservoir of rinsing solution, such as DIW, through which a substrate may be lifted. A solvent vapor may be provided at the rinsing solution interface on the substrate, such as in a Marangoni process. In certain embodiments, the volume of solution through which the substrate is lifted is reduced, which may provide for reduced or eliminated particle reattachment to the substrate.