Abstract: Described herein are photonic systems and devices including a optical interface unit disposed on a bottom side of a photonic integrated circuit (PIC) to receive light from an emitter of the PIC. A top side of the PIC includes a flip-chip interface for electrically coupling the PIC to an organic substrate via the top side. An alignment feature corresponding to the emitter is formed with the emitter to be offset by a predetermined distance value; because the emitter and the alignment feature are formed using a shared processing operation, the offset (i.e., predetermined distance value) may be precise and consistent across similarly produced PICs. The PIC comprises a processing feature to image the alignment feature from the bottom side (e.g., a hole). A heat spreader layer surrounds the optical interface unit and is disposed on the bottom side of the PIC to spread heat from the PIC.

Abstract: The wavelength response of an arrayed waveguide grating can be tuned, in accordance with various embodiments, using a beam sweeper including one or more heaters to shift a lateral position of light focused by the beam sweeper at an interface of the beam sweeper with an input free propagation region of the arrayed waveguide grating.

Abstract: Embodiments of the invention describe various configurations for a multi-wavelength laser cavity. A laser cavity may include a shared reflector and a plurality of reflectors. Each of the plurality of reflectors and the shared reflector together form one of the plurality of output wavelength channels. A shared filter is utilized to filter the optical signal of the laser cavity to comprise a subset of a plurality of cavity modes. A (de)multiplexer, comprising a plurality of filtering elements), receives the optical signal and further selects and separates the final lasing wavelengths from the selected subset of cavity modes, and each filtering element outputs an optical signal having a wavelength for one of the output wavelength channels.

Abstract: Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.

Abstract: Described herein are photonic systems and devices including a optical interface unit disposed on a bottom side of a photonic integrated circuit (PIC) to receive light from an emitter of the PIC. A top side of the PIC includes a flip-chip interface for electrically coupling the PIC to an organic substrate via the top side. An alignment feature corresponding to the emitter is formed with the emitter to be offset by a predetermined distance value; because the emitter and the alignment feature are formed using a shared processing operation, the offset (i.e., predetermined distance value) may be precise and consistent across similarly produced PICs. The PIC comprises a processing feature to image the alignment feature from the bottom side (e.g., a hole). A heat spreader layer surrounds the optical interface unit and is disposed on the bottom side of the PIC to spread heat from the PIC.

Abstract: Described herein are methods, systems, and apparatuses to utilize a laser device comprising a gain section, a wavelength filter, a first reflector, and a second reflector to form a laser cavity with the first reflector, the laser cavity to include the gain section and the wavelength filter. The wavelength filter is temperature stabilized to a predetermined temperature range and the remaining portions of the laser cavity are not temperature stabilized. The wavelength filter, when at the predetermined temperature range, comprises a plurality of adjacent longitudinal modes such that a difference in modal gain values associated with each of the adjacent longitudinal modes is within a predetermined delta. Thus, the cavity of the laser device is designed to experience some mode hops when the device temperature changes; however, because the wavelength filter is stabilized in temperature, the cavity drift due to these mode hops is within a limited range.

Abstract: Described herein are methods, systems, and apparatuses to utilize a laser device comprising a gain section, a wavelength filter, a first reflector, and a second reflector to form a laser cavity with the first reflector, the laser cavity to include the gain section and the wavelength filter. The wavelength filter is temperature stabilized to a predetermined temperature range and the remaining portions of the laser cavity are not temperature stabilized. The wavelength filter, when at the predetermined temperature range, comprises a plurality of adjacent longitudinal modes such that a difference in modal gain values associated with each of the adjacent longitudinal modes is within a predetermined delta. Thus, the cavity of the laser device is designed to experience some mode hops when the device temperature changes; however, because the wavelength filter is stabilized in temperature, the cavity drift due to these mode hops is within a limited range.

Abstract: Described herein are photonic systems and devices including a optical interface unit disposed on a bottom side of a photonic integrated circuit (PIC) to receive light from an emitter of the PIC. A top side of the PIC includes a flip-chip interface for electrically coupling the PIC to an organic substrate via the top side. An alignment feature corresponding to the emitter is formed with the emitter to be offset by a predetermined distance value; because the emitter and the alignment feature are formed using a shared processing operation, the offset (i.e., predetermined distance value) may be precise and consistent across similarly produced PICs. The PIC comprises a processing feature to image the alignment feature from the bottom side (e.g., a hole). A heat spreader layer surrounds the optical interface unit and is disposed on the bottom side of the PIC to spread heat from the PIC.

Abstract: Embodiments of the invention describe various configurations for a multi-wavelength laser cavity. A laser cavity may include a shared reflector and a plurality of reflectors. Each of the plurality of reflectors and the shared reflector together form one of the plurality of output wavelength channels. A shared filter is utilized to filter the optical signal of the laser cavity to comprise a subset of a plurality of cavity modes. A (de)multiplexer, comprising a plurality of filtering elements), receives the optical signal and further selects and separates the final lasing wavelengths from the selected subset of cavity modes, and each filtering element outputs an optical signal having a wavelength for one of the output wavelength channels.

Abstract: Embodiments of the invention describe integrating a phase shifting component into a cavity of a laser. Said phase shifter is capable of a continuous phase shift at a single wavelength over a large range (where the maximum energy consumption of the phase shifting component does not scale with the phase shifting range). In other words, said phase shifter is used to form a configurable optical cavity length for a laser. Embodiments of the invention thus utilize a plurality of optical cavity lengths—including one or more optical cavity lengths to potentially shift the phase of the output optical signal, to maintain a laser cavity's output wavelength and avoid spatial mode-hops in the presence of fluctuations such as temperature drift or changes to the drive current of the laser.

Abstract: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.

Abstract: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.

Abstract: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.

Abstract: A laser is placed inside the Mach-Zehnder interferometer and the output from opposite ends of the laser are fed directly into the opposite arms of the Mach-Zehnder interferometer. If the output from opposite sides of the laser are equal in amplitude and wavelength, then when the outputs are recombined at the output of the modulator the intensity is dependent on the relative phase of the light in the two arms of the Mach-Zehnder, just as in a normal Mach-Zehnder modulator. Thus by modulating the phase of one or both arms of the modulator, an intensity modulated source is created. This reduces the overall size of the device, and may ensure that all of the output power from the laser is utilized.

Abstract: A silicon vertical cavity laser with in-plane coupling comprises wafer bonding an active III-V semiconductor material above a grating coupler made on a silicon-on-insulator (SOI) wafer. This bonding does not require any alignment, since all silicon processing can be done before bonding, and all III-V processing can be done after bonding. The grating coupler acts to couple the vertically emitted light from the hybrid vertical cavity into a silicon waveguide formed on an SOI wafer.

Abstract: A laser is placed inside the Mach-Zehnder interferometer and the output from opposite ends of the laser are fed directly into the opposite arms of the Mach-Zehnder interferometer. If the output from opposite sides of the laser are equal in amplitude and wavelength, then when the outputs are recombined at the output of the modulator the intensity is dependent on the relative phase of the light in the two arms of the Mach-Zehnder, just as in a normal Mach-Zehnder modulator. Thus by modulating the phase of one or both arms of the modulator, an intensity modulated source is created. This reduces the overall size of the device, and may ensure that all of the output power from the laser is utilized.