Patents by Inventor Bruce K. Furman

Bruce K. Furman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6255450
    Abstract: Deaggregated substituted and unsubstituted polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyaccetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: January 12, 1999
    Date of Patent: July 3, 2001
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 6087472
    Abstract: Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polysclenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: July 11, 2000
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 6005070
    Abstract: Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: January 16, 1997
    Date of Patent: December 21, 1999
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 5990249
    Abstract: Deaggregated substituted and unsubstituted polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: August 28, 1997
    Date of Patent: November 23, 1999
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 5981970
    Abstract: A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure.Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: November 9, 1999
    Assignee: International Business Machines Corporation
    Inventors: Christos Dimitrios Dimitrakopoulos, Peter Richard Duncombe, Bruce K. Furman, Robert B. Laibowitz, Deborah Ann Neumayer, Sampath Purushothaman
  • Patent number: 5962632
    Abstract: Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polysclenopliene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: August 14, 1997
    Date of Patent: October 5, 1999
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 5946551
    Abstract: A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. A fabrication process for the same, especially a process for deposition of the gate insulator using chemical solutions. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: August 31, 1999
    Inventors: Christos Dimitrios Dimitrakopoulos, Peter Richard Duncombe, Bruce K. Furman, Robert B. Laibowitz, Deborah Ann Neumayer, Sampath Purushothaman
  • Patent number: 5804100
    Abstract: Deaggregated substituted and unsubstituted polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: January 9, 1995
    Date of Patent: September 8, 1998
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 5736623
    Abstract: Deaggregated substituted and unsubstitued polyparaphenylenes, polyparaphenylevevinyles, polyanilines, polyazines, polythiophenes, poly-p-phenylene sulfides, polyfuranes, polypyrroles, polyselenophene, polyacetylenes formed from soluble precursors and combinations thereof and copolymers thereof and methods of fabrication are described. The deaggregated polymer molecules when subsequently doped show higher electrical conductivity. Agents such as lithium chloride, m-cresol and nonylphenol are used to deaggregate the polymer molecules. The deaggregating agents can be added prior to or during doping the molecules.
    Type: Grant
    Filed: May 30, 1995
    Date of Patent: April 7, 1998
    Assignee: International Business Machines Corporation
    Inventors: Marie Angelopoulos, Bruce K. Furman
  • Patent number: 5534094
    Abstract: A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.
    Type: Grant
    Filed: September 29, 1994
    Date of Patent: July 9, 1996
    Assignee: IBM Corporation
    Inventors: Gnanalingam Arjavalingam, Alina Deutsch, Fuad E. Doany, Bruce K. Furman, Donald J. Hunt, Chandrasekhar Narayan, Modest M. Oprysko, Sampath Purushothaman, Vincent Ranieri, Stephen Renick, Jane M. Shaw, Janusz S. Wilczynski, David F. Witman
  • Patent number: 5258236
    Abstract: A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.
    Type: Grant
    Filed: May 3, 1991
    Date of Patent: November 2, 1993
    Assignee: IBM Corporation
    Inventors: Gnanalingam Arjavalingam, Alina Deutsch, Fuad E. Doany, Bruce K. Furman, Donald J. Hunt, Chandrasekhar Narayan, Modest M. Oprysko, Sampath Purushothaman, Vincent Ranieri, Stephen Renick, Jane M. Shaw, Janusz S. Wilczynski, David F. Witman