Abstract: In one example, an electroplating system comprises a bath reservoir, a holding device, an anode, a direct current power supply, and a controller. The bath reservoir contains an electrolyte solution. The holding device holds a wafer submerged in the electrolyte solution. The wafer comprises features covered by a cobalt layer. The anode is opposite to the wafer and submerged in the electrolyte solution. The direct current power supply generates a direct current between the holding device and the anode. A combination of forward and reverse pulses is applied between the holding device and the anode to electroplate a copper layer on the cobalt layer of the wafer.

Abstract: Electroplating results can be improved by dynamically controlling the pressure in different parts of an electroplating apparatus. For example, a number of plating problems can be avoided by ensuring that the pressure in an anode chamber always remains slightly above the pressure in an ionically resistive element manifold, both during electroplating and during non-electroplating operations. This pressure differential prevents the membrane from stretching downward into the anode chamber.

Abstract: An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, fluid enters the cross flow manifold through channels in the channeled plate, and through a cross flow inlet, then exits at the cross flow exit, positioned opposite the cross flow inlet. The apparatus may switch between a sealed state and an unsealed state during electroplating, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal.

Abstract: Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller. The process chamber includes a wafer holder configured to hold a wafer substrate, a vacuum port configured to allow formation of a subatmospheric pressure in the process chamber, and a fluid inlet coupled to the degasser and configured to deliver a degassed pre-wetting fluid onto the wafer substrate at a velocity of at least about 7 meters per second whereby particles on the wafer substrate are dislodged and at a flow rate whereby dislodged particles are removed from the wafer substrate. The controller includes program instructions for forming a wetting layer on the wafer substrate in the process chamber by contacting the wafer substrate with the degassed pre-wetting fluid admitted through the fluid inlet at a flow rate of at least about 0.4 liters per minute.

Abstract: A method of electroplating a metal into features of a partially fabricated electronic device on a substrate is provided. The method includes (a) electroplating the metal into the features, to partially fill the features by a bottom up fill mechanism, while contacting the features with a first electroplating bath having a first composition and comprising ions of the metal; (b) thereafter, electroplating more of the metal into the features, to further fill the features, while contacting the features with a second electroplating bath having a second composition, which is different than the first composition, and comprises the ions of the metal; and (c) removing the substrate from an electroplating tool where operation (b) was performed.

Abstract: Various embodiments herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. The apparatus includes an ionically resistive element that separates the plating chamber into a cross flow manifold (above the ionically resistive element) and an ionically resistive element manifold (below the ionically resistive element). Electrolyte is delivered to the cross flow manifold, where it shears over the surface of the substrate, and to the ionically resistive element manifold, where it passes through through-holes in the ionically resistive element to impinge upon the substrate as it enters the cross flow manifold. In certain embodiments, the flow of electrolyte into the cross flow manifold (e.g., through a side inlet) and the flow of electrolyte into the ionically resistive element manifold are actively controlled, e.g., using a three-way valve. In these or other cases, the ionically resistive element may include electrolyte jets.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: Various embodiments described herein relate to methods and apparatus for electroplating material onto a semiconductor substrate. In some cases, one or more membrane may be provided in contact with an ionically resistive element to minimize the degree to which electrolyte passes backwards from a cross flow manifold, through the ionically resistive element, and into an ionically resistive element manifold during electroplating. The membrane may be designed to route electrolyte in a desired manner in some embodiments. In these or other cases, one or more baffles may be provided in the ionically resistive element manifold to reduce the degree to which electrolyte is able to bypass the cross flow manifold by flowing back through the ionically resistive element and across the electroplating cell within the ionically resistive element manifold. These techniques can be used to improve the uniformity of electroplating results.

Abstract: Systems and methods for fabrication of a redistribution layer are described. There is no deposition of a seed layer, made from copper, on top of a substrate. The lack of the seed layer avoids a need for etching the seed layer. When the seed layer is not etched, the redistribution layer, also made from copper, is not etched.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

Abstract: Disclosed herein are electroplating systems for electroplating nickel onto a semiconductor substrate having an electroplating cell for holding an electrolyte solution during electroplating which includes a cathode chamber and an anode chamber configured to hold a nickel anode, and having an oxygen removal device arranged to reduce oxygen concentration in the electrolyte solution as it is flowed to the anode chamber during electroplating and during idle times when the system is not electroplating. Also disclosed herein are methods of electroplating nickel onto a substrate in an electroplating cell having anode and cathode chambers, which include reducing the oxygen concentration in an electrolyte solution, flowing the electrolyte solution into the anode chamber and contacting a nickel anode therein, and electroplating nickel from the electrolyte solution onto a substrate in the cathode chamber, wherein the electrolyte solution in the cathode chamber is maintained at a pH of between about 3.5 and 4.5.

Abstract: Disclosed are pre-wetting apparatus designs and methods for cleaning solid contaminants from substrates prior to through resist deposition of metal. In some embodiments, a pre-wetting apparatus includes a process chamber having a substrate holder, and at least one nozzle located directly above the wafer substrate and configured to deliver pre-wetting liquid (e.g., degassed deionized water) onto the substrate at a grazing angle of between about 5 and 45 degrees. In some embodiments the nozzle is a fan nozzle configured to deliver the liquid to the center of the substrate, such that the liquid first impacts the substrate in the vicinity of the center and then flows over the center of the substrate. In some embodiments the substrate is rotated unidirectionally or bidirectionally during pre-wetting with multiple accelerations and decelerations, which facilitate removal of contaminants.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. The shield is positioned in close proximity of the substrate (e.g., within a distance that is equal to 0.1 of the substrate's radius). The shield in some embodiments may be an ionically resistive ionically permeable element having an azimuthally asymmetric distribution of channels.

Abstract: Disclosed herein are methods of cleaning a lipseal and/or cup bottom of an electroplating device by removing metal deposits accumulated in prior electroplating operations. The methods may include orienting a nozzle such that it is pointed substantially at the inner circular edge of the lipseal and/or cup bottom, and dispensing a stream of cleaning solution from the nozzle such that the stream contacts the inner circular edge of the lipseal and/or cup bottom while they are being rotated, removing metal deposits. In some embodiments, the stream has a velocity component against the rotational direction of the lipseal and/or cup bottom. In some embodiments, the deposits may include a tin/silver alloy. Also disclosed herein are cleaning apparatuses for mounting in electroplating devices and for removing electroplated metal deposits from their lipseals and/or cup bottoms. In some embodiments, the cleaning apparatuses may include a jet nozzle.

Abstract: The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. Also typically present is an edge flow element configured to direct electrolyte into a corner formed between the substrate and substrate holder. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet.

Abstract: An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

Abstract: Methods and apparatus for electroplating substrates are described herein. In some cases, an ionically resistive element is positioned near the substrate, creating a cross flow manifold between the ionically resistive element and the substrate. During plating, fluid may enter the cross flow manifold upward through the channels in the ionically resistive element, and (optionally) laterally through a cross flow side inlet. The flow paths combine in the cross flow manifold and exit at the cross flow outlet, which may be positioned opposite the cross flow inlet. In some embodiments, the ionically resistive element may include two or more flow regions, where the flow through each flow region is independently controllable. In these or other embodiments, an electrolyte jet may be included to flow additional electrolyte toward the substrate at a particular radial location or locations during plating. In some embodiments, the ionically resistive element may be omitted.

Abstract: Methods of electroplating metal on a substrate while controlling azimuthal uniformity, include, in one aspect, providing the substrate to the electroplating apparatus configured for rotating the substrate during electroplating, and electroplating the metal on the substrate while rotating the substrate relative to a shield such that a selected portion of the substrate at a selected azimuthal position dwells in a shielded area for a different amount of time than a second portion of the substrate having the same average arc length and the same average radial position and residing at a different angular (azimuthal) position. For example, a semiconductor wafer substrate can be rotated during electroplating slower or faster, when the selected portion of the substrate passes through the shielded area.