Patents by Inventor Bulent M. Basol

Bulent M. Basol has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PRECURSOR CONTAINING COPPER INDIUM AND GALLIUM FOR SELENIDE (SULFIDE) COMPOUND FORMATION
    Publication number: 20090314649
    Abstract: The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.
    Type: Application
    Filed: August 31, 2009
    Publication date: December 24, 2009
    Applicant: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • Filling deep features with conductors in semiconductor manufacturing
    Patent number: 7625814
    Abstract: A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: December 1, 2009
    Assignee: ASM Nutool, Inc.
    Inventors: Ismail Emesh, Chantal J. Arena, Bulent M. Basol
  • ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF GROUP IIIB-GROUP VIA THIN FILMS
    Publication number: 20090283414
    Abstract: An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.
    Type: Application
    Filed: May 19, 2008
    Publication date: November 19, 2009
    Inventors: Jiaxiong Wang, Serdar Aksu, Bulent M. Basol
  • SELENIUM ELECTROPLATING CHEMISTRIES AND METHODS
    Publication number: 20090283411
    Abstract: An electroplating solution to electroplate a selenium containing film on a conductive surface is provided. The electroplating solution includes a solvent, a selenium source material that dissolves in the solvent; an anti-coagulation agent that inhibits Se particle growth and promotes Se particle dispersal. The pH value of the electroplating solution is in the range of 2-10.
    Type: Application
    Filed: May 15, 2008
    Publication date: November 19, 2009
    Inventors: Serdar Aksu, Yongbong Han, Bulent M. Basol
  • METHOD OF MAKING CONTACT TO A SOLAR CELL EMPLOYING A GROUP IBIIIAVIA COMPOUND ABSORBER LAYER
    Publication number: 20090283140
    Abstract: A solar cell manufacturing method which forms a Group IBIIAVIA absorber layer over a front side of a metallic substrate. The back side of the metallic substrate is coated with a conductive protection layer, such as a metal nitride material, that that does not form a high resistivity selenide or sulfide films when exposed to Se and S species at temperatures in the range of 400-600 C. Additionally, the protection material layer is stable in highly acidic and basic electroplating solutions that are employed to deposit layers or precursor layers comprising Cu and at least one of In, Ga, Se and S.
    Type: Application
    Filed: May 19, 2008
    Publication date: November 19, 2009
    Inventors: James Freitag, Mustafa Pinarbasi, Bulent M. Basol
  • ELECTROPLATING METHODS AND CHEMISTRIES FOR DEPOSITION OF COPPER-INDIUM-GALLIUM CONTAINING THIN FILMS
    Publication number: 20090283415
    Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.
    Type: Application
    Filed: February 13, 2009
    Publication date: November 19, 2009
    Inventors: Serdar Aksu, Jiaxiong Wang, Bulent M. Basol
  • METHOD AND APPARATUS FOR ACHIEVING LOW RESISTANCE CONTACT TO A METAL BASED THIN FILM SOLAR CELL
    Publication number: 20090269877
    Abstract: A system and method of forming a thin film solar cell with a metallic foil substrate are provided. After forming a semiconductor absorber film over the front surface of the metallic foil substrate a back surface of the metallic foil substrate is treated using a material removal process to form a treated back surface in a process chamber. In one embodiment, the material removal process is performed while depositing a transparent conductive layer over the semiconductor absorber film in the process chamber.
    Type: Application
    Filed: June 27, 2008
    Publication date: October 29, 2009
    Inventors: Mustafa Pinarbasi, Bulent M. Basol
  • METALLIC FOIL SUBSTRATE AND PACKAGING TECHNIQUE FOR THIN FILM SOLAR CELLS AND MODULES
    Publication number: 20090266399
    Abstract: Methods of forming thin film solar cells with a metallic substrate are described, as well as solar cells and solar cells strings. The front surface of the metallic substrate is polished to form a polished front surface so that the average roughness of the polished front surface is less than 50 nm. The back surface of the metallic substrate is roughened to form a rough back surface so that the average roughness of the conditioned back surface is more than 500 nm. A Group IBIIIAVIA compound absorber layer is formed over the polished front surface.
    Type: Application
    Filed: June 27, 2008
    Publication date: October 29, 2009
    Inventors: Bulent M. Basol, Mustafa Pinarbasi
  • Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells
    Publication number: 20090266398
    Abstract: An apparatus for and a method of interconnecting at least two solar cells using contact areas which are formed on the conductive substrates of the solar cells is described. The contact areas are formed by a material removal process which removes high resistance surface layers of the conductive substrates at the contact areas. A stringing process serially interconnects the solar cells by connecting each contact area that is cleared of high resistance surface layer to the terminal of one of the adjacent solar cells.
    Type: Application
    Filed: April 28, 2008
    Publication date: October 29, 2009
    Inventors: Burak Metin, Mukundan Narasimhan, Mustafa Pinarbasi, Bulent M. Basol
  • Apparatus for Simultaneous Roll-to-Roll Wet Processing of Two Workpieces Disposed Within a Single Chamber
    Publication number: 20090255461
    Abstract: A system is described to deposit a buffer layer onto exposed surfaces of two different solar cell absorber layers of two different flexible workpieces from a process solution including all chemical components of the buffer layer material. The buffer layer is deposited from the process or deposition solution while the flexible workpieces are simultaneously heated and processed within a chamber in a face to face manner as the process solution is flown through a process gap formed between the exposed surfaces of the two solar cell absorber layers.
    Type: Application
    Filed: June 4, 2009
    Publication date: October 15, 2009
    Applicant: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • ROLL-TO-ROLL PROCESSING METHOD AND TOOLS FOR ELECTROLESS DEPOSITION OF THIN LAYERS
    Publication number: 20090246908
    Abstract: A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is heated and elastically shaped by a heated shaping plate to retain the process solution on the solar cell absorber layer. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into a cavity area in the heated shaping plate using an attractive force.
    Type: Application
    Filed: May 12, 2009
    Publication date: October 1, 2009
    Applicant: SoloPower, Inc.
    Inventors: Bulent M. Basol, Serkan Erdemli, Jalal Ashjaee
  • APPARATUS FOR CONTINUOUS PROCESSING OF BUFFER LAYERS FOR GROUP IBIIIAVIA SOLAR CELLS
    Publication number: 20090223444
    Abstract: A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber.
    Type: Application
    Filed: May 8, 2009
    Publication date: September 10, 2009
    Applicant: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • METHOD FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYER WITH SHAPED GALLIUM PROFILE
    Publication number: 20090226717
    Abstract: Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.
    Type: Application
    Filed: March 30, 2009
    Publication date: September 10, 2009
    Applicant: SoloPower, Inc.
    Inventor: Bulent M. Basol
  • Method and apparatus to form thin layers of materials on a base
    Patent number: 7585547
    Abstract: The present invention relates to method and apparatus for preparing thin films of materials for various applications including electronic devices such as solar cells. In one aspect, each of the method and apparatus passing an electrical current through at least one of the base or sheet to provide controlled localized heat to the base or sheet, or to layers disposed above the base or sheet. In another aspect, the controlled localized heat is provided in combination with a process environment that can be a non-inert gas that contains an element that will become part of a compound on the base or sheet, or an inert gas that allows for the process environment to provide annealing.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: September 8, 2009
    Assignee: SoloPower, Inc.
    Inventors: Bulent M. Basol, Serkan Erdemli
  • Precursor containing copper indium and gallium for selenide (sulfide) compound formation
    Patent number: 7582506
    Abstract: The present invention relates to systems and methods for preparing metallic precursor thin films for the growth of semiconductor compounds to be used for radiation detector and solar cell fabrication. In one aspect, there is provided a method of efficiently using expensive materials necessary for the making of solar cells.
    Type: Grant
    Filed: January 8, 2007
    Date of Patent: September 1, 2009
    Assignee: Solopower, Inc.
    Inventor: Bulent M. Basol
  • Electropolishing system and process
    Patent number: 7578923
    Abstract: The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.
    Type: Grant
    Filed: March 18, 2003
    Date of Patent: August 25, 2009
    Assignee: Novellus Systems, Inc.
    Inventors: Bulent M. Basol, Homayoun Talieh
  • METHOD TO IMPROVE FLEXIBLE FOIL SUBSTRATE FOR THIN FILM SOLAR CELL APPLICATIONS
    Publication number: 20090203165
    Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.
    Type: Application
    Filed: September 18, 2008
    Publication date: August 13, 2009
    Inventors: Mustafa Pinarbasi, Serdar Aksu, Bulent M. Basol
  • METHOD FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYER WITH OPTIMIZED GALLIUM CONTENT AT ITS SURFACE
    Publication number: 20090199895
    Abstract: A method of forming a Group IBIIIAVIA solar cell absorber, which includes a top surface region of less than or equal to 300 nm depth. The Ga/(Ga+In) molar ratio within the top surface region is in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including at least Cu and In formed on a base, a separator layer including Se is formed on the metallic film, a metallic source layer substantially including Ga formed on the separator layer, and a cap layer substantially including Se formed on the source layer.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 13, 2009
    Inventor: Bulent M. Basol
  • INDIUM ELECTROPLATING BATHS FOR THIN LAYER DEPOSITION
    Publication number: 20090188808
    Abstract: Indium (In) electroplating solutions which are used to deposit compositionally pure, uniform, substantially defect free and smooth In films with near 100% plating efficiency and repeatability. In one embodiment the plating solution includes an In source, citric acid and its conjugate pair salt and a solvent. At a pH value of below 4.0, sub-micron thick In layers with close to 100% purity at close to 100% plating efficiency are produced. Such In layers are used in fabrication of electronic devices such as thin film solar cells.
    Type: Application
    Filed: January 29, 2008
    Publication date: July 30, 2009
    Inventors: Jiaxiong Wang, Serdar Aksu, Bulent M. Basol
  • REACTOR TO FORM SOLAR CELL ABSORBERS
    Publication number: 20090183675
    Abstract: A roll-to-roll or reel-to-reel RTP tool including a reactor having a continuous insert placed in a primary gap of the reactor is provided. The primary gap of the reactor is defined by peripheral reactor walls including a top reactor wall, a bottom reactor wall and side reactor walls. The continuous insert includes a continuous process gap through which a continuous workpiece travels between an entry opening and an exit opening of the insert. An inner space exists between at least one of the insert walls and at least a portion of the peripheral reactor walls that make up the primary gap. At least one gas inlet is connected to the inner space, and at least one exhaust opening connects the process gap as well as the inner space to outside the reactor and carries any gaseous products to outside the process gap and the primary gap of the reactor.
    Type: Application
    Filed: December 12, 2008
    Publication date: July 23, 2009
    Inventors: Mustafa Pinarbasi, Howard G. Zolla, Ying Yu, Gregory Norsworthy, Jalal Ashjaee, Bulent M. Basol