Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: The present invention provides methods of electroplating a film or films onto a top surface of a continuously moving roll-to-roll sheet. In one aspect, the invention includes continuously electroplating a film onto a conductive surface using an electroplating unit as the roll-to-roll sheet moves therethrough, detecting a thickness of the film electroplated onto a portion of the roll-to-roll sheet and generating a thickness signal corresponding thereto. In this aspect, when continuously electroplating, the thickness of the film is adjusted toward a predetermined thickness value using the thickness signal for a subsequent portion of the roll-to-roll sheet that follows the portion of the roll-to-roll sheet.

Abstract: Consistent excess conductive material is provided for plated conductors in integrated circuit metallization, regardless of the size and depth of trenches/vias into which the conductive material is deposited. Accordingly, subsequent processing (e.g., material removal) can be consistent and efficient for wafers with different feature sizes (particularly different depths), and for wafers at different metallization levels.

Abstract: A method of removing material from a conductive surface of a workpiece while the conductive surface and an electrode are wetted by a process solution. The method comprises the steps of applying power between the conductive surface and the electrode, rendering the conductive surface anodic. The method includes the step of allowing a passivation layer to build up on the conductive surface/The method includes the step of applying an external influence to the conductive surface to periodically reduce the passivation layer thickness. Advantages of the invention include an efficient technique for electropolishing a workpiece.

Abstract: The methods and systems described provide for radiation assisted material deposition, removal, and planarization at a surface, edge, and/or bevel of a workpiece such as a semiconductor wafer. Exemplary processes performed on a workpiece surface having topographical features include radiation assisted electrochemical material deposition, which produces an adsorbate layer outside of the features to suppress deposition outside of the features and to encourage, through charge conservation, deposition into the features to achieve, for example, a planar surface profile. A further exemplary process is radiation assisted electrochemical removal of material, which produces an adsorbate layer in the features to suppress removal of material from the features and to encourage, through charge conservation, removal of material outside of the features so that, for example, a planar surface profile is achieved.

Abstract: The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module. After the deposition, the wafer is moved to the second module of the system and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules can be positioned in a cluster tool. The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: The present invention relates to semiconductor integrated circuit technology and discloses an electrochemical mechanical processing system for uniformly distributing an applied force to a workpiece surface. The system includes a workpiece carrier for positioning or holding the workpiece surface and a workpiece-surface-influencing-device (WSID). The WSID is used to uniformly distribute the applied force to the workpiece surface and includes various layers that are used to process and apply a uniform and global force to the workpiece surface.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: Systems and methods to provide electrical contacts to a workpiece to facilitate electrotreating processes, including electroplating and electroetching processes are presented.

Abstract: A system for processing a conductive surface on a front surface of a wafer to form a metallic interconnect structure is disclosed. The system for processing comprises an electrochemical mechanical processing (ECMPR) module configured to form a substantially planarized conductive layer on the front surface of the wafer, a chamber within the ECMPR module configured to remove conductive material from an edge region of the wafer, a CMP module configured to receive the wafer from the ECMPR module and polish the planarized conductive layer on the surface of the wafer to form the metallic interconnect structure, and a robot configured to transfer the wafer from the ECMPR module to the chemical mechanical polish (CMP) module. In one aspect of the invention, the ECMPR module deposits conductive material on the front surface of the wafer. The ECMPR module removes at least a portion of the conductive layer from the front surface of the wafer.

Abstract: The present invention is directed to a top surface of a workpiece surface influencing device and a method of using the same. The top surface of the workpiece surface influencing device is adapted for use in an electrochemical mechanical processing apparatus in which a solution becomes disposed onto a conductive surface of a workpiece and electrochemical mechanical processing of the conductive surface is performed while relative movement and physical contact exists between the top surface and the conductive surface. The top surface comprises a ceramic material that presents a substantially planar contact area to the conductive surface, the ceramic material having a hardness greater than that of the conductive surface. A plurality of channels are formed through the top surface.

Abstract: The present invention provides a method for forming a conductive film with uniform properties on a wafer surface that has features or cavities. During the process, the workpiece is rotated and laterally moved while an electrodeposition solution is delivered onto the wafer surface at a predetermined flow rate, and a potential difference is applied between the workpiece surface and the electrode. The workpiece is rotated about an axis at predetermined revolutions per minute so that an edge region of the workpiece has a first predetermined linear velocity due to the rotation. The workpiece has a second predetermined linear velocity due to the lateral motion. The second predetermined velocity may be larger than the first predetermined velocity. Further, the wafer may not be rotated.

Abstract: The present invention includes a mask plate design that includes at least one or a plurality of channels portions on a surface of the mask plate, into which electrolyte solution will accumulate when the mask plate surface is disposed on a surface of wafer, and out of which the electrolyte solution will freely flow. There are also at least one or a plurality of polish portions on the mask plate surface that allow for polishing of the wafer when the mask plate surface is disposed on a surface of wafer.

Abstract: A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.

Abstract: The present invention provides a novel system, apparatus, and method to deposit conductive films on a workpiece. A system for electroplating a surface of a workpiece using a process solution is disclosed. The system comprises a solution housing configured to house an electrode and to contain the process solution, a filter element disposed in the solution housing configured to partition the solution housing into a lower chamber and an upper chamber, and an upper inlet port coupled to the solution housing configured to deliver the process solution to the upper chamber of the solution housing to fill the upper chamber and the lower chamber immersing the electrode in the lower chamber.

Abstract: The present invention provides a method and apparatus for wet processing of a conductive layer using a degassed process solution such as a degassed electrochemical deposition solution, a degassed electrochemical polishing solution, a degassed electroless deposition solution, and a degassed cleaning solution. The technique includes degassing the process solution before delivering the degassed process solution to a processing unit or degassing the process solution in-situ, within the processing unit.

Abstract: A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.