Abstract: There is provided a power factor correction device including: a main switching unit including a first main switch and a second main switch performing a switching operation with predetermined phase differences; an auxiliary switching unit including a first auxiliary switch and a second auxiliary switch forming a transmission path for surplus power existing before the first main switch and the second main switch are turned on, respectively; an inductor unit positioned between a power input unit to which AC power is applied and the main switching unit and accumulating or discharging energy according to a switching operation of the main switching unit; and an auxiliary inductor unit regulating an amount of current flowing in the auxiliary switching unit in the event of a switching operation of the auxiliary switching unit.

Abstract: Disclosed herein is a power module package including an external connection terminal, a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is formed to penetrate in a thickness direction thereof, and a semiconductor chip mounted on one surface of the substrate.

Abstract: There is provided a gate driving device, including: an inverter arm including a high-side switch and a low-side switch; a gate driving unit receiving an instruction signal to provide switching control to the inverter arm, outputting a control signal to control switching of the inverter arm, and including a plurality of gate drivers; and a balancing unit causing voltage applied to the plurality of gate drivers to be divided to be supplied to respective gate drivers among the plurality of gate drivers, according to the switching of the inverter arm based on the control signal.

Abstract: Disclosed herein is a semiconductor module package, including: a first module including a first heat radiation substrate and one or more first semiconductor elements and having a first N terminal and a first P terminal formed at one end thereof; a second module including a second heat radiation substrate and one or more second semiconductor elements, having a second N terminal and a second P terminal formed at one end thereof, and disposed so as to face the first module; and a first output terminal formed by electrically connecting the first module to the second module.

Abstract: Disclosed herein is a unit power module including: a first semiconductor chip having one surface on which a 1-1-th electrode and a 1-2-th electrode spaced apart from the 1-1-th electrode are formed and the other surface on which a 1-3-th electrode is formed, a second semiconductor chip having one surface on which a 2-1-th electrode is formed and the other surface on which a 2-2-th electrode is formed, a first metal plate contacting the 1-1-th electrode of the first semiconductor chip and the 2-1-th electrode of the second semiconductor chip, a second metal plate contacting the 1-2-th electrode of the first semiconductor chip and spaced apart from the first metal plate, a third metal plate contacting the 1-3-th electrode of the first semiconductor chip and the 2-2-th electrode of the second semiconductor chip, and a sealing member formed to surround the first metal plate, the second metal plate, and the third metal plate.

Abstract: Disclosed herein is a power module package including: a substrate including a metal layer, a first insulation layer formed on the metal layer, a first circuit pattern formed on the first insulation layer and including a first pad and a second pad spaced apart from the first pad, a second insulation layer formed on the first insulation layer to cover the first circuit pattern, and a second circuit pattern formed on the second insulation layer and including a third pad formed on a location corresponding to the first pad and a fourth pad spaced apart from the third pad; a semiconductor chip mounted on the second circuit pattern; one end being electrically connected to the semiconductor chip, and another end protruding from the outside, wherein the first pad and the third pad, and the second pad and the fourth pad have different polarities.

Abstract: A gate driver circuit applicable to an inductive load, an inverter module, and an inverter apparatus are provided. The gate driver circuit includes a high side driver having a first output side and a first control side and generating a high side gate signal; and a low side driver generating a low side gate signal, wherein the high side driver includes a first VS pad formed on the first output side; a first output pad formed on the first output side, a first VB pad formed on the first control side; and a second VB pad formed to be adjacent to the first VB pad on the first control side and electrically connected to the first VS pad; and a first circuit unit connected to the plurality of pads to provide the high side gate signal through the first output pad.

Abstract: Disclosed herein is a heat radiating substrate including: a heat radiating plate including a plurality of holes having a predetermined depth and formed in a lower portion of one side thereof; a conductor pattern layer formed on the heat radiating plate and including a mounting pad on which a control device and a power device are mounted and a circuit pattern; and an insulating layer formed between the heat radiating plate and the conductor pattern layer.

Abstract: There is provided a flyback converter, including: a power supply unit supplying input power; a transformer unit including first and second transformers converting first and second primary current from the power supply unit into first and second secondary current, respectively; a main switch unit including first and second main switches respectively intermitting the first and second primary current flowing in respective primary windings of the first and second transformers; an auxiliary switch unit including first and second auxiliary switches forming respective transfer paths for dump power present before the first and second main switches are switched on; and an auxiliary inductor unit including first and second auxiliary inductors respectively adjusting the amount of current flowing in the first and second auxiliary switches during the switching operation thereof, wherein the first and second main switches perform a switching operation while having a predetermined phase difference therebetween.

Abstract: Disclosed herein is a heat dissipation system for a power module, including: first cooling medium flow parts and second cooling medium flow parts allowing cooling media to flow in first and second directions, respectively.

Abstract: A power factor correction circuit may include a boost converter circuit in which a plurality of boost circuits including a boost inductor, a rectifying diode, and a boost switch are connected with each other; and a snubber circuit including a snubber inductor and a snubber switch so as to snubber the boost converter circuit. The snubber inductor may be controlled so as to be turned on before the boost inductor is turned on to apply zero voltage to the boost inductor. It is possible to reduce switching loss occurring when the boost switch is turned on and increase efficiency of an AC-DC power supply apparatus.

Abstract: There are provided a power factor correction circuit, and a power supply including the same, the power factor correction circuit including a main switch adjusting a phase difference between a current and a voltage of input power, a main inductor storing or discharging the power according to switching of the main switch, a snubber circuit unit including a snubber switch forming a transfer path for surplus power present before the main switch is turned on and a snubber inductor adjusting an amount of a current applied to the snubber switch, and a reduction circuit unit including an auxiliary inductor inductively coupled to the snubber inductor and an auxiliary resistor consuming power induced from the snubber inductor through the auxiliary inductor.

Abstract: There is provided a power factor correction circuit including: a main switching unit including a first main switch and a second main switch performing a switching operation to regulate a phase difference between a current and a voltage of input power, respectively; a main inductor unit including a first main inductor and a second main inductor accumulating or discharging energy according to a switching operation of each of the first main switch and the second main switch; a snubber switching unit including a first snubber switch and a second snubber switch providing zero-voltage turn-on conditions to the first main switch and the second main switch, respectively; and a controller controlling a switching operation of the main switching unit and the snubber switching unit.

Abstract: There are provided a housing capable of evenly distributing stress generated at the time of assembly thereof and a power module having the same. The housing for a power module according to an embodiment of the invention includes: a body part having a space formed therein, the space receiving a module substrate having electronic devices mounted thereon; a plurality of fastening parts protruded from sides of the body part; and a fastening member having a leaf spring form and having both ends coupled to two of the fastening parts, respectively, wherein the fastening member includes: a coupling portion coupled to a fixing member; and elastic portions extending from both edges of the coupling portion to be coupled to the fastening parts and elastically deformed when the coupling portion is fastened to a heat radiating substrate to provide elastic force to the fastening parts.

Abstract: There is provided a gate driving device, including: an inverter arm including a high-side switch and a low-side switch; a gate driving unit receiving an instruction signal to provide switching control to the inverter arm, outputting a control signal to control switching of the inverter arm, and including a plurality of gate drivers; and a balancing unit causing voltage applied to the plurality of gate drivers to be divided to be supplied to respective gate drivers among the plurality of gate drivers, according to the switching of the inverter arm based on the control signal.

Abstract: Disclosed herein is a power module package including an external connection terminal, a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is formed to penetrate in a thickness direction thereof, and a semiconductor chip mounted on one surface of the substrate.

Abstract: There is provided a driving apparatus for driving an interleaved power factor correction circuit including a first main switch and a second main switch performing a switching operation with a predetermined phase difference and a first auxiliary switch and a second auxiliary switch forming a transformation path for surplus power existing before an ON operation of the first main switch and a second main switch, respectively, including: an input unit obtaining an input signal; a current sensing unit obtaining information regarding a current of the interleaved power factor correction circuit; and an output unit outputting a first control signal with respect to the first main switch, a third control signal with respect to the second main switch, a second control signal with respect to the first auxiliary switch, and a fourth control signal with respect to the second auxiliary switch, based on the input signal and the current information.

Abstract: There is provided a power semiconductor module in which power semiconductor elements, integration of which may be difficult due to heating, are modularized. The power semiconductor module includes: a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, wherein the electronic elements have varying spaces therebetween.

Abstract: Disclosed herein is a semiconductor module package, including: a first module including a first heat radiation substrate and one or more first semiconductor elements and having a first N terminal and a first P terminal formed at one end thereof; a second module including a second heat radiation substrate and one or more second semiconductor elements, having a second N terminal and a second P terminal formed at one end thereof, and disposed so as to face the first module; and a first output terminal formed by electrically connecting the first module to the second module.