Patents by Inventor Byeoung Ju Ha
Byeoung Ju Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9054673Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.Type: GrantFiled: November 1, 2013Date of Patent: June 9, 2015Assignees: Samsung Electronics Co., Ltd., Korea University Industrial and Academic Collaboration FoundationInventors: Yun-kwon Park, Byeoung-ju Ha, Byeong-Kwon Ju, Jae-sung Rieh, In-sang Song, Jin-woo Lee, Jea-shik Shin, Young-min Park
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Patent number: 8720023Abstract: A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.Type: GrantFiled: December 24, 2009Date of Patent: May 13, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-kwon Park, In-sang Song, Seok-chul Yun, Seog-woo Hong, Byeoung-ju Ha, Dong-ha Shim, Hae-seok Park, Kuang-woo Nam, Duck-hwan Kim
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Publication number: 20140077897Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.Type: ApplicationFiled: November 1, 2013Publication date: March 20, 2014Applicants: KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-kwon PARK, Byeoung-ju HA, Byeong-Kwon Ju, Jae-sung RIEH, In-sang SONG, Jin-woo LEE, Jea-shik SHIN, Young-min PARK
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Patent number: 8659098Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.Type: GrantFiled: February 18, 2009Date of Patent: February 25, 2014Assignees: Samsung Electronics Co., Ltd., Korea University Industrial and Academic Collaboration FoundationInventors: Yun-Kwon Park, Byeoung-Ju Ha, Byeong-Kwon Ju, Jae-Sung Rieh, In-Sang Song, Jin-Woo Lee, Jea-Shik Shin, Young-Min Park
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Patent number: 8418331Abstract: Provided is a method for fabricating a duplexer. The method includes fabricating an embedded PCB having an isolation part built therein and forming pads on certain areas of an upper side of the embedded PCB to connect with an external terminal. Further, a first filter and a second filter are separately fabricated, each having at least one film bulk acoustic resonator which is fabricated by depositing a lower electrode, a piezoelectric layer, and an upper electrode in this respective order. Thereafter, the first and second filters are bonded onto the pads formed on the embedded PCB. The entire surface of the embedded PCD is packaged at a predetermined distance from the first and second filters.Type: GrantFiled: January 13, 2011Date of Patent: April 16, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-sik Hwang, Yun-kwon Park, Il-jong Song, Byeoung-ju Ha
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Patent number: 8410871Abstract: A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.Type: GrantFiled: March 11, 2008Date of Patent: April 2, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Chul-soo Kim, Sang-won Yun, Young-ho Cho, In-sang Song, Byeoung-ju Ha, Duck-hwan Kim
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Patent number: 8120015Abstract: A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.Type: GrantFiled: January 22, 2009Date of Patent: February 21, 2012Assignees: Samsung Electronics Co., Ltd., Korea University Industrial and Academic Collaboration FoundationInventors: Yun-Kwon Park, Sung-Woo Hwang, Jea-Shik Shin, Byeoung-Ju Ha, Jae-Sung Rieh, In-Sang Song, Yong-Kyu Kim, Byeong-Kwon Ju, Hee-Tae Kim
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Publication number: 20110107570Abstract: A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.Type: ApplicationFiled: January 13, 2011Publication date: May 12, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jun-sik HWANG, Yun-kwon Park, Il-jong Song, Byeoung-ju Ha
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Patent number: 7893792Abstract: A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.Type: GrantFiled: August 23, 2004Date of Patent: February 22, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jun-sik Hwang, Yun-kwon Park, Il-jong Song, Byeoung-ju Ha
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Patent number: 7793395Abstract: A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.Type: GrantFiled: March 19, 2007Date of Patent: September 14, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Byeoung-ju Ha, Yun-kwon Park, In-sang Song, Il-jong Song, Jong-seok Kim, Duck-hwan Kim, Jun-sik Hwang
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Publication number: 20100107387Abstract: A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.Type: ApplicationFiled: October 23, 2009Publication date: May 6, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: In-sang Song, Byeoung-ju Ha, Duck-hwan Kim, Yun-kwon Park
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Publication number: 20100095497Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.Type: ApplicationFiled: December 24, 2009Publication date: April 22, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yun-kwon PARK, In-sang SONG, Seok-chul YUN, Seog-woo HONG, Byeoung-ju HA, Dong-ha SHIM, Hae-seok PARK, Kuang-woo NAM, Duck-hwan KIM
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Patent number: 7663450Abstract: A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.Type: GrantFiled: November 1, 2005Date of Patent: February 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-kwon Park, In-sang Song, Seok-chul Yun, Seog-woo Hong, Byeoung-ju Ha, Dong-ha Shim, Hae-seok Park, Kuang-woo Nam, Duck-hwan Kim
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Patent number: 7622846Abstract: A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.Type: GrantFiled: April 5, 2005Date of Patent: November 24, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: In-sang Song, Byeoung-ju Ha, Duck-hwan Kim, Yun-kwon Park
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Patent number: 7619492Abstract: A film bulk acoustic resonator (FBAR) including a substrate having an etched air gap therethrough; a resonance part having a first electrode, a piezoelectric film and a second electrode which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part.Type: GrantFiled: January 4, 2006Date of Patent: November 17, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Byeoung-ju Ha, Seog-woo Hong, In-sang Song, Hyung Choi
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Patent number: 7615842Abstract: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.Type: GrantFiled: June 23, 2006Date of Patent: November 10, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-ho Lee, Hae-seok Park, Byeoung-ju Ha, Seog-woo Hong, Hyung Choi, In-sang Song
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Publication number: 20090267706Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.Type: ApplicationFiled: February 18, 2009Publication date: October 29, 2009Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATIONInventors: Yun-kwon PARK, Byeoung-Ju Ha, Byeong-Kwon Ku, Jae-Sung Rieh, In-Sang Song, Jin-Woo Lee, Jea-shik Shin, Young-Min Park
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Publication number: 20090184783Abstract: A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.Type: ApplicationFiled: January 22, 2009Publication date: July 23, 2009Applicants: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATIONInventors: Yun-kwon Park, Sung-Woo Hwang, Jea-Shik Shin, Byeoung-Ju Ha, Jae-Sung Rieh, In-Sang Song, Yong-Kyu Kim, Byeong-Kwon Ju, Hee-Tae Kim
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Patent number: 7548139Abstract: A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.Type: GrantFiled: June 19, 2006Date of Patent: June 16, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Hao-seok Park, Joo-ho Lee, Byeoung-ju Ha, Seog-woo Hong, Hyung Choi, In-sang Song
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Patent number: 7535322Abstract: A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.Type: GrantFiled: November 9, 2005Date of Patent: May 19, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-kwon Park, Duck-hwan Kim, Kuang-woo Nam, In-sang Song, Seok-chul Yun, Byeoung-ju Ha, Jong-seok Kim