Patents by Inventor Byung-Jun Park

Byung-Jun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing image sensor having backside illumination structure
    Patent number: 8691617
    Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.
    Type: Grant
    Filed: May 22, 2012
    Date of Patent: April 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon Kim, Byung-jun Park, Hee-chul An
  • SELF-PIERCING RIVET
    Publication number: 20130322987
    Abstract: A self-piercing rivet is disclosed. The self-piercing rivet integrally joins an upper plate member and a lower plate member overlapping each other. The self-piercing rivet includes a head portion, a shank portion integrally connected with the head portion, a plurality of ribs formed to an external circumferential surface of the shank portion along a length direction of the shank portion in a spiral form, and at least one stopper protrusion protruded from a lower portion of the head portion.
    Type: Application
    Filed: September 28, 2012
    Publication date: December 5, 2013
    Applicant: Sungwoo Hitech Co., Ltd.
    Inventors: Mun Yong LEE, Byung-Jun Park
  • SELF-PIERCING RIVET
    Publication number: 20130322986
    Abstract: A self-piercing rivet is disclosed. The self-piercing rivet integrally joins an upper plate member and a lower plate member overlapping each other. The self-piercing rivet includes a head portion, a shank portion integrally connected with the head portion and a plurality of ribs formed to an external circumferential surface of the shank portion along a length direction of the shank portion in a spiral form, wherein a drive slot is formed to upper portion of the head portion.
    Type: Application
    Filed: September 28, 2012
    Publication date: December 5, 2013
    Applicant: Sungwoo Hitech Co., Ltd.
    Inventors: Mun Yong LEE, Byung-Jun Park
  • Methods of forming a through via structure
    Publication number: 20130323875
    Abstract: Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench through a substrate to form an inner substrate, which is enclosed by the isolation trench and forming an insulating layer in the isolation trench and on a surface of the substrate. The methods may also include forming a hole, which is spaced apart from the isolation trench and passes through a portion of the insulating layer formed on the surface of the substrate and the inner substrate and forming a conductive layer in the hole and on the insulating layer formed on the surface of the substrate. The methods may be used to manufacture image sensors.
    Type: Application
    Filed: March 14, 2013
    Publication date: December 5, 2013
    Inventors: Byung-Jun Park, Seung-Hun Shin
  • SELF-PIERCING RIVET
    Publication number: 20130315690
    Abstract: A self-piercing rivet is disclosed. The self-piercing rivet integrally joins an upper plate member and a lower plate member overlapping each other. The self-piercing rivet includes a head portion, a shank portion integrally connected with the head portion, and a plurality of ribs formed to an external circumferential surface of the shank portion along a length direction of the shank portion in a spiral form.
    Type: Application
    Filed: September 28, 2012
    Publication date: November 28, 2013
    Applicant: SUNGWOO HITECH CO., LTD.
    Inventors: Mun Yong LEE, Byung-Jun Park
  • Methods of Fabricating CMOS Image Sensors
    Publication number: 20130280850
    Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Application
    Filed: June 14, 2013
    Publication date: October 24, 2013
    Inventor: Byung-Jun Park
  • IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20130203209
    Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
    Type: Application
    Filed: March 15, 2013
    Publication date: August 8, 2013
    Inventors: Byung Jun PARK, Yong Woo LEE, Chang Rok MOON
  • Image sensor devices including electrically conductive reflectors
    Patent number: 8471300
    Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: June 25, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-Jun Park
  • Image sensor and method of fabricating the same
    Patent number: 8426938
    Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.
    Type: Grant
    Filed: February 15, 2010
    Date of Patent: April 23, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung Jun Park, Yong Woo Lee, Chang Rok Moon
  • SELF-PIERCING RIVET
    Publication number: 20130094924
    Abstract: A self-piercing rivet is disclosed. The self-piercing rivet integrally joins an upper plate member and a lower plate member overlapped with each other. The self-piercing rivet includes: a head portion; and a shank portion integrally connected to the head portion and provided with more than two slits.
    Type: Application
    Filed: December 14, 2011
    Publication date: April 18, 2013
    Applicant: SUNGWOO HITECH CO., LTD.
    Inventors: Mun-Yong Lee, Byung-Jun Park
  • METHOD OF MANUFACTURING IMAGE SENSOR HAVING BACKSIDE ILLUMINATION STRUCTURE
    Publication number: 20130017646
    Abstract: A method of manufacturing an image sensor having a backside illumination (BSI) structure includes forming a wiring unit on a front side of a semiconductor substrate, forming an anti-reflective layer in an active pixel sensor (APS) region on a back side of the semiconductor substrate, a photodiode being between the back and front sides of the semiconductor substrate, forming an etch stopping layer on the anti-reflective layer, forming an interlayer insulating layer on the etch stopping layer, the interlayer insulating layer having an etch selectivity with respect to the etch stopping layer, and etching the interlayer insulating layer in the APS region using the etch stopping layer as an etch stopping point.
    Type: Application
    Filed: May 22, 2012
    Publication date: January 17, 2013
    Inventors: Sang-hoon KIM, Byung-jun PARK, Hee-chul AN
  • DIFFUSER STRUCTURE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130008005
    Abstract: A diffuser structure and a manufacturing method thereof are disclosed. The diffuser structure includes a substrate, a plurality of throughholes, and a glue layer. The throughholes are perpendicularly formed in the substrate. Each throughhole includes a gas-in part, a gas-out part, and a connecting part for connecting the gas-in part to the gas-out part. The glue layer is formed on a side wall of each gas-out part, and a thickness of the glue layer is between 1 ?m and 11 ?m. The present invention can solve a problem that particles are periodically generated after a periodic self-cleaning function is implemented in a plasma-enhanced chemical vapor deposition system.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 10, 2013
    Applicant: Global Material Science Co., LTD.
    Inventors: Byung-jun Park, Jin-jong Su, Fang-yu Liu
  • IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
    Publication number: 20120238051
    Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
    Type: Application
    Filed: June 4, 2012
    Publication date: September 20, 2012
    Applicant: Samsung Electronics Co., Ltd.
    Inventor: Byung Jun PARK
  • CMOS IMAGE SENSORS AND RELATED DEVICES AND FABRICATION METHODS
    Publication number: 20120175720
    Abstract: An image sensor device includes a substrate including a light sensing region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Application
    Filed: March 9, 2012
    Publication date: July 12, 2012
    Inventor: Byung-Jun PARK
  • Image sensor and method of fabricating the same
    Patent number: 8217484
    Abstract: The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: July 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung Jun Park
  • Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods
    Patent number: 8207590
    Abstract: A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.
    Type: Grant
    Filed: June 29, 2009
    Date of Patent: June 26, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byung-Jun Park, Sang-Hee Kim
  • Apparatus and method of setting multi-channels in network system
    Patent number: 8170568
    Abstract: An apparatus of setting multi-channels in a network system includes a mobile station transmitting at least one piece of channel information on a request message, wherein the request message requests to set a connection identifier for a communication service; and a control station calculating a bandwidth according to number of channels using the request message received from the mobile station and setting the calculated bandwidth as a service bandwidth of the connection identifier. The control station such as an ACR supports multi-channels through one frame structure (i.e., a communication structure of a connection identifier) and thus radio resources (e.g., bandwidth) to be provided to the mobile station are reduced.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: May 1, 2012
    Assignee: Samsung Electronics co., Ltd.
    Inventor: Byung-Jun Park
  • Semiconductor Devices Having Backside Illuminated Image Sensors
    Publication number: 20120091515
    Abstract: A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
    Type: Application
    Filed: July 12, 2011
    Publication date: April 19, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Gil-Sang Yoo, Chang-Rok Moon, Byung-Jun Park, Sang-Hoon Kim, Seung-Hun Shin
  • CMOS image sensors and related devices and fabrication methods
    Patent number: 8154062
    Abstract: An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.
    Type: Grant
    Filed: October 16, 2009
    Date of Patent: April 10, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Byung-Jun Park
  • Large capacity hollow-type flywheel energy storage device
    Patent number: 8134264
    Abstract: Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability.
    Type: Grant
    Filed: September 15, 2009
    Date of Patent: March 13, 2012
    Assignee: Korea Electric Power Corporation
    Inventors: Young Hee Han, Se Yong Jung, Jeong Phil Lee, Byung Jun Park, Byeong Cheol Park, Nyeon Ho Jeong, Tae Hyun Sung