Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: Memory systems may include a memory storage including at least a first stripe and a second stripe, the first stripe including data pages corresponding to the first stripe and a first parity page suitable for storing a first XOR parity, and the second stripe including data pages corresponding to the second stripe and a second parity page suitable for storing a second XOR parity, the data pages and parity pages being stored over a plurality of memory dies, wherein each memory die includes a number of planes; and a controller suitable for cyclically interleaving the data pages corresponding to the first stripe and the data pages corresponding to the second stripe.

Abstract: Memory systems may include a memory storage including at least a first stripe and a second stripe, the first stripe including data pages corresponding to the first stripe and a first parity page suitable for storing a first XOR parity, and the second stripe including data pages corresponding to the second stripe and a second parity page suitable for storing a second XOR parity, the data pages and parity pages being stored over a plurality of memory dies, wherein each memory die includes a number of planes; and a controller suitable for cyclically interleaving the data pages corresponding to the first stripe and the data pages corresponding to the second stripe.

Abstract: A digital signal processing (DSP) system includes an analog to digital converter, program random access memory (PRAM), N switching devices, and a control module. The analog to digital converter is configured to convert samples of an analog signal into digital samples. The PRAM includes: N PRAM blocks, where N is an integer greater than one; and code for M digital signal processing functions stored in the N PRAM blocks, where M is an integer greater than one. The N switching devices are configured to connect and disconnect the N PRAM blocks, respectively, to and from a power source. The control module is configured to: control the N switching devices; and execute selected ones of the M digital signal processing functions on the digital samples to produce an output.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A digital signal processing (DSP) system includes an analog to digital converter, program random access memory (PRAM), N switching devices, and a control module. The analog to digital converter is configured to convert samples of an analog signal into digital samples. The PRAM includes: N PRAM blocks, where N is an integer greater than one; and code for M digital signal processing functions stored in the N PRAM blocks, where M is an integer greater than one. The N switching devices are configured to connect and disconnect the N PRAM blocks, respectively, to and from a power source. The control module is configured to: control the N switching devices; and execute selected ones of the M digital signal processing functions on the digital samples to produce an output.

Abstract: A method is provided for depositing a whisker resistant tin-based coating layer on a surface of a copper substrate. The method is useful for preparing an article comprising a copper substrate having a surface; and a tin-based coating layer on the surface of the substrate, wherein the tin-based coating layer has a thickness between 0.5 micrometers and 1.5 micrometers and has a resistance to formation of copper-tin intermetallics, wherein said resistance to formation of copper-tin intermetallics is characterized in that, upon exposure of the article to at least seven heating and cooling cycles in which each cycle comprises subjecting the article to a temperature of at least 217° C. followed by cooling to a temperature between about 20° C. and about 28° C., there remains a region of the tin coating layer that is free of copper that is at least 0.25 micrometers thick.

Abstract: A method and composition for enhancing corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and at least one metal-based layer on a surface of the substrate. The composition comprises a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, a phosphoric acid, a phosphate salt, a phosphate ester, and mixtures thereof; an organic compound comprising a nitrogen-containing functional group; and a solvent having a surface tension less than about 50 dynes/cm as measured at 25° C.

Abstract: A system and method are set forth for remotely controlling a presentation in a loop mode to allow the presentation to continue in the absence of a communication channel between the portable electronic device and remote presentation device. In particular, the portable electronic device can issue a command to the remote presentation device to present the presentation in loop mode so that a user of the portable electronic device can leave the vicinity of the remote presentation device (e.g. out of communication range) while the presentation plays in loop mode.

Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.

Abstract: A biological control is disclosed for termites, including subterranean termites such as C. formosanus, comprising a mixture of a chitin synthesis inhibitor such as lufenuron with a pathogen or opportunistic pathogen. The combination greatly enhances the effectiveness above that of the individual components. For example, P. aeruginosa is commonly found in association with termites, but it is not normally harmful to termites. However, in the presence of lufenuron, P. aeruginosa becomes an opportunistic pathogen that kills termites. As another example, B. thuringiensis, which otherwise has shown only limited effectiveness against termites, has greatly enhanced lethality in combination with lufenuron. In another aspect a termite toxicant is administered to termites in a clay-based bait. Clay acts as an attractant for subterranean termites such as C. formosanus, and a clay bait can increase a colony's consumption of a toxicant.

Abstract: A system and method are set forth for remotely controlling a presentation from a portable electronic device so as to freeze a slide on a remote projector to permit searching for a desired slide on the portable electronic device and then continuing the presentation when searching is complete. In one embodiment, a switch is provided in a communication layer of a presentation application such that when the switch is turned off, communication is suspended between the portable electronic device and the projector, thereby permitting browsing on the portable electronic device without interrupting the presentation. When the switch is turned on the current slide information is transmitted from the portable electronic device to the projector.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.

Abstract: According to embodiments described in the specification, a method, system and apparatus for managing attachments are provided. The method comprises: receiving a request for a slideshow attachment, the slideshow attachment maintained in a memory; distilling at least one content layer from the slideshow attachment; generating a slide list from the slideshow attachment; converting the slide list and at least a portion of the at least one content layer into a transmission format; and, transmitting a response to the request, the response comprising the converted slide list and the converted portion of the at least one layer.

Abstract: A system and method are set forth for remotely controlling a presentation in a loop mode to allow the presentation to continue in the absence of a communication channel between the portable electronic device and remote presentation device. In particular, the portable electronic device can issue a command to the remote presentation device to present the presentation in loop mode so that a user of the portable electronic device can leave the vicinity of the remote presentation device (e.g. out of communication range) while the presentation plays in loop mode.

Abstract: A system and method are set forth for remotely controlling a presentation from a portable electronic device so as to freeze a slide on a remote projector to permit searching for a desired slide on the portable electronic device and then continuing the presentation when searching is complete. In one embodiment, a switch is provided in a communication layer of a presentation application such that when the switch is turned off, communication is suspended between the portable electronic device and the projector, thereby permitting browsing on the portable electronic device without interrupting the presentation. When the switch is turned on the current slide information is transmitted from the portable electronic device to the projector.

Abstract: A method is provided for depositing a whisker resistant tin-based coating layer on a surface of a copper substrate. The method is useful for preparing an article comprising a copper substrate having a surface; and a tin-based coating layer on the surface of the substrate, wherein the tin-based coating layer has a thickness between 0.5 micrometers and 1.5 micrometers and has a resistance to formation of copper-tin intermetallics, wherein said resistance to formation of copper-tin intermetallics is characterized in that, upon exposure of the article to at least seven heating and cooling cycles in which each cycle comprises subjecting the article to a temperature of at least 217° C. followed by cooling to a temperature between about 20° C. and about 28° C., there remains a region of the tin coating layer that is free of copper that is at least 0.25 micrometers thick.

Abstract: A method and composition for enhancing corrosion resistance, wear resistance, and contact resistance of a device comprising a copper or copper alloy substrate and at least one metal-based layer on a surface of the substrate. The composition comprises a phosphorus oxide compound selected from the group consisting of a phosphonic acid, a phosphonate salt, a phosphonate ester, a phosphoric acid, a phosphate salt, a phosphate ester, and mixtures thereof; an organic compound comprising a nitrogen-containing functional group; and a solvent having a surface tension less than about 50 dynes/cm as measured at 25° C.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.

Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.