Abstract: An on-demand table model for semiconductor device evaluation is provided. A method of providing on-demand table models for semiconductor device evaluation, includes measuring one or more measurement values of an instance of a semiconductor device. The method further includes providing, by a processor, a table model of the instance for the semiconductor device evaluation upon receiving a request for the semiconductor device evaluation. The method further includes generating a table entry in the table model for the one or more measurement values, the table entry including one or more evaluation values of an evaluation function for the instance.

Abstract: An on-demand table model for semiconductor device evaluation is provided. A method of providing on-demand table models for semiconductor device evaluation, includes measuring one or more measurement values of an instance of a semiconductor device. The method further includes providing, by a processor, a table model of the instance for the semiconductor device evaluation upon receiving a request for the semiconductor device evaluation. The method further includes generating a table entry in the table model for the one or more measurement values, the table entry including one or more evaluation values of an evaluation function for the instance.

Abstract: A method, system and program product are disclosed for statistical modeling an integrated circuit that provides information about partial correlations between model parameters. The invention determines a variance-covariance matrix for data to be modeled; conducts principal component analysis on the variance-covariance matrix; and creates a statistical model with an independent distribution for each principal component, allowing calculation of each individual model parameter as a weighted sum by a circuit simulator. The statistical model provides information about how well individual transistors will track one another based on layout similarity. This allows the designer to quantify and take advantage of design practices that make all transistors similar, for example, by orienting all gates in the same direction. A method, system and program product for simulating a circuit using the statistical model are also included.

Abstract: A method of determining a set of parameters for modeling an active semiconductor device in which current flow through a channel or other area is regulated by voltage applied to the device terminals, for example, MOSFETs. The method comprises first providing a plurality of measured values for current as a function of voltage for a plurality of active semiconductor devices of differing geometries. There is then determined an initial population of vectors comprising individual values representing a plurality of desired active semiconductor device model parameters. Fitness is then evaluated for each of the vectors by comparing calculated values for current as a function of voltage from the population to the plurality of measured values for current as a function of voltage of the vectors, converting any current differences to voltage errors and adding any such voltage errors together to arrive at a fitness value for each vector.