Patents by Inventor Calvin Leung
Calvin Leung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160118289Abstract: An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide layer. The glass substrate is then removed, exposing the electrodes and the top surface of the electronic device.Type: ApplicationFiled: December 31, 2015Publication date: April 28, 2016Inventors: Calvin LEUNG, Olivier LE NEEL
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Publication number: 20160041114Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.Type: ApplicationFiled: October 19, 2015Publication date: February 11, 2016Inventors: Olivier Le Neel, Ravi Shankar, Suman Cherian, Calvin Leung, Tien-Choy Loh, Shian-Yeu Kam
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Patent number: 9257423Abstract: An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide layer. The glass substrate is then removed, exposing the electrodes and the top surface of the electronic device.Type: GrantFiled: November 26, 2013Date of Patent: February 9, 2016Assignee: STMicroelectronics Pte. Ltd.Inventors: Calvin Leung, Olivier Le Neel
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Patent number: 9176089Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.Type: GrantFiled: March 29, 2013Date of Patent: November 3, 2015Assignee: STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Ravi Shankar, Suman Cherian, Calvin Leung, Tien-Choy Loh, Shian-Yeu Kam
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Publication number: 20150253276Abstract: A universal electrochemical micro-sensor can be used either as a biosensor or an environmental sensor. Because of its small size and flexibility, the micro-sensor is suitable for continuous use to monitor fluids within a live subject, or as an environmental monitor. The micro-sensor can be formed on a reusable glass carrier substrate. A flexible polymer backing, together with a set of electrodes, forms a reservoir that contains an electrolytic fluid chemical reagent. During fabrication, the glass carrier substrate protects the fluid chemical reagent from degradation. A conductive micromesh further contains the reagent while allowing partial exposure to the ambient biological or atmospheric environment. The micromesh density can be altered to accommodate fluid reagents having different viscosities. Flexibility is achieved by attaching a thick polymer tape and peeling away the micro-sensor from the glass carrier substrate.Type: ApplicationFiled: March 7, 2014Publication date: September 10, 2015Applicant: STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Suman Cherian, Calvin Leung
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Publication number: 20150145137Abstract: An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide layer. The glass substrate is then removed, exposing the electrodes and the top surface of the electronic device.Type: ApplicationFiled: November 26, 2013Publication date: May 28, 2015Applicant: STMicroelectronics Pte. LtdInventors: Calvin Leung, Olivier Le Neel
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Publication number: 20150001075Abstract: A bio-fluid sensor is formed by depositing polyimide on a glass substrate. Gold and platinum are deposited on the polyimide and patterned to form fluid sensing electrodes, signal traces, and a temperature sensor. The fluid sensor is then fixed to a flexible tape and peeled off of the glass substrate.Type: ApplicationFiled: June 27, 2013Publication date: January 1, 2015Inventors: Olivier Le Neel, Suman Cherian, Calvin Leung, Ravi Shankar, Tien Choy Loh, Shian Yeu Kam
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Publication number: 20140292344Abstract: A device is provided for monitoring the total current discharged from a battery. The device includes a bridge circuit of resistors in which one of the resistors has a resistance which varies according to the current which has passed through it. Whenever the battery passes a current to a load, a small portion of the current is passed through the bridge circuit.Type: ApplicationFiled: March 29, 2013Publication date: October 2, 2014Applicant: STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Calvin Leung
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Publication number: 20140291677Abstract: A semiconductor-based multi-sensor module integrates miniature temperature, pressure, and humidity sensors onto a single substrate. Pressure and humidity sensors can be implemented as capacitive thin film sensors, while the temperature sensor is implemented as a precision miniature Wheatstone bridge. Such multi-sensor modules can be used as building blocks in application-specific integrated circuits (ASICs). Furthermore, the multi-sensor module can be built on top of existing circuitry that can be used to process signals from the sensors. An integrated multi-sensor module that uses differential sensors can measure a variety of localized ambient environmental conditions substantially simultaneously, and with a high level of precision. The multi-sensor module also features an integrated heater that can be used to calibrate or to adjust the sensors, either automatically or as needed.Type: ApplicationFiled: March 29, 2013Publication date: October 2, 2014Applicant: STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Ravi Shankar, Suman Cherian, Calvin Leung, Tien-Choy Loh, Shian-Yeu Kam
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Patent number: 8809861Abstract: A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.Type: GrantFiled: December 29, 2010Date of Patent: August 19, 2014Assignee: STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Ravi Shankar, Calvin Leung
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Patent number: 8786396Abstract: A heater design for post-process trimming of thin-film transistors is described. The heater incorporates low sheet-resistance material deposited in non-active connecting regions of the heater to reduce heat generation and power consumption in areas distant from active heating members of the heater. The heating members are proximal to a thin-film resistor. The resistance of the thin-film resistor can be trimmed permanently to a desired value by applying short current pulses to the heater. Optimization of a heater design is described. Trimming currents can be as low as 20 mA.Type: GrantFiled: December 29, 2011Date of Patent: July 22, 2014Assignee: STMicroelectronics Pte. Ltd.Inventors: Calvin Leung, Olivier Le Neel
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Patent number: 8659085Abstract: The present disclosure is directed to an integrated circuit having a substrate and a first and a second interconnect structure over the substrate. Each interconnect structure has a first conductive layer over the substrate and a second conductive layer over the first conductive layer. The integrated circuit also includes a thin film resistor over a portion of the substrate between the first and the second interconnect structure that electrically connects the first conductive layers of the first and second interconnect structures.Type: GrantFiled: August 24, 2010Date of Patent: February 25, 2014Assignee: STMicroelectronics Pte Ltd.Inventors: Hui Chong Vince Ng, Olivier Le Neel, Calvin Leung
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Patent number: 8558654Abstract: A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin films are deposited in a sequence that falls between depositions of thick metal contacts to the thin films.Type: GrantFiled: December 29, 2011Date of Patent: October 15, 2013Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics S.r.l., STMicroelectronics Pte Ltd.Inventors: Olivier Le Neel, Stefania Maria Serena Privitera, Pascale Dumont-Girard, MaurizoGabriele Castorina, Calvin Leung
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Patent number: 8436426Abstract: The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.Type: GrantFiled: August 24, 2010Date of Patent: May 7, 2013Assignee: STMicroelectronics PTE Ltd.Inventors: Olivier Le Neel, Calvin Leung
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Patent number: 8400257Abstract: The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.Type: GrantFiled: August 24, 2010Date of Patent: March 19, 2013Assignees: STMicroelectronics PTE Ltd, STMicroelectronics, Inc.Inventors: Ting Fang Lim, Chengyu Niu, Olivier Le Neel, Calvin Leung
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Publication number: 20120168754Abstract: A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.Type: ApplicationFiled: December 29, 2010Publication date: July 5, 2012Applicant: STMICROELECTRONICS PTE LTD.Inventors: Olivier Le Neel, Ravi Shankar, Calvin Leung
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Publication number: 20120119872Abstract: A heater design for post-process trimming of thin-film transistors is described. The heater incorporates low sheet-resistance material deposited in non-active connecting regions of the heater to reduce heat generation and power consumption in areas distant from active heating members of the heater. The heating members are proximal to a thin-film resistor. The resistance of the thin-film resistor can be trimmed permanently to a desired value by applying short current pulses to the heater. Optimization of a heater design is described. Trimming currents can be as low as 20 mA.Type: ApplicationFiled: December 29, 2011Publication date: May 17, 2012Applicant: STMicroelectronics Pte Ptd.Inventors: Calvin Leung, Olivier Le Neel
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Publication number: 20120112873Abstract: A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin films are deposited in a sequence that falls between depositions of thick metal contacts to the thin films.Type: ApplicationFiled: December 29, 2011Publication date: May 10, 2012Applicants: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics Pte Ltd., STMicroelectronics S.r.I.Inventors: Olivier Le Neel, Stefania Maria Serena Privitera, Pascale Dumont-Girard, Maurizio Gabriele Castorina, Calvin Leung
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Publication number: 20120049323Abstract: The present disclosure is directed to an integrated circuit having a substrate and a first and a second interconnect structure over the substrate. Each interconnect structure has a first conductive layer over the substrate and a second conductive layer over the first conductive layer. The integrated circuit also includes a thin film resistor over a portion of the substrate between the first and the second interconnect structure that electrically connects the first conductive layers of the first and second interconnect structures.Type: ApplicationFiled: August 24, 2010Publication date: March 1, 2012Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventors: Hui Chong Vince Ng, Olivier Le Neel, Calvin Leung
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Publication number: 20120049997Abstract: The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.Type: ApplicationFiled: August 24, 2010Publication date: March 1, 2012Applicants: STMICROELECTRONICS, INC., STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventors: Ting Fang Lim, Chengyu Niu, Olivier Le Neel, Calvin Leung