Abstract: Provided is a method for manufacturing a semiconductor device capable of preventing a solution from penetrating a lower layer by forming a poly silicon layer stacked of the films having the different grain boundary structures at border, wherein the solution is used in the subsequent strip and cleaning process.

Abstract: The present invention relates to an organic compound having acetylene group(s), a thin film formed by vacuum deposition polymerization using said organic compound, vacuum deposition polymerization to form said thin film, and an electroluminescence device containing said thin film. More particularly, the present invention relates to an organic compound having at least one acetylene groups, vacuum deposition polymerization in which said organic compound is deposited on the substrate and simultaneously or then polymerized by heat treatment or UV irradiation to form a polymer thin film, and an electroluminescence device using at least one layer of said thin film.

Abstract: The present invention provides a sol-gel composition which comprises a mixture of a polyalkylene glycol-substituted trialkoxysilane (PAGTAS), a polyalkylene glycol and/or alkyl ether, a tetraalkoxysilane (TAOS), a hydrochloric acid, at least one organic solvent and/or a lithium salt, which mixture is optionally concentrated; a polymeric ion conductive film obtained by coating said compositions with a conventional solution processing method and solid electrochemical elements using the same. According to the present invention, a polymeric ion conductive film having no phase separation, strong adhesiveness for electrode, and ion conductivity of at least 1×10−4 S/cm at room temperature is provided.

Abstract: The present invention relates to a process for producing a styrene-maleic acid polyethyleneoxy ester copolymer from compositions comprising a styrene-maleic anhydride copolymer, polyethyleneglycol and polyethyleneglycol monoalkyl ether (in a weight ratio of from 0 to 100% relative to the polythyleneglycol), the copolymer produced therefrom, an ion-conducting thin membrane composition produced with an electrolytic salt, an ion-conducting thin membrane containing the copolymer and a process for producing the same, a solid electrochemical material containing the copolymer. The copolymer according the present invention has a high solubility in organic solvent, a good rubber elasticity. The ion-conducting thin membrane comprising this copolymer and an electrolytic salt as major components has an excellent mechanical property, a high adhesive strength and a high ion conductivity at room temperature.

Abstract: This invention relates to a poly (imide amic ester) random copolymer, a precursor thereof, and a process for preparing the same. Specifically this invention relates to a novel precursor of polyimide, poly(imide amic ester) which is chemically stable and has excellent workability in either liquid or solid state, a polyimide obtained therefrom and a process for preparing the same.

Abstract: A word line driving circuit for a semiconductor memory is provided that drives a corresponding word line of a first number of word lines coupled to a plurality of memory cells based on a memory address signal generated from a more significant controller. The memory cells have a matrix form of rows and columns and the first number of word lines are divided into a second number of word line groups. The word line driving circuit includes a second number of word line group driving circuits each respectively coupled to one of the second number of word line groups to drive one of the word lines in the word line group selected by a control signal. A word line selecting circuit determines which of the second word line groups contain the corresponding word line to be driven using the memory address signal and generates the control signal for the corresponding word line group driving circuit.

Abstract: The present invention relates to a process for preparing isobutene-cyclodiene copolymers having a number-average molecular weight of at least 100,000 and an unsaturation of 1.about.30% by mol, characterized in that polymerization is carried out without gelation by reacting 75.about.99.5% by weight of an isobutene and 0.5.about.25% by weight of a cyclodiene or a mixture of cyclodiene as reaction materials, in a polar reaction solvent of 1.about.10 times by weight with respect to the reaction materials, wherein a catalyst solution of 0.02.about.2% by weight in the polar solvent is used in the amount of 0.2.about.2 times by weight with respect to the reaction materials, at a reaction temperature of -100.degree..about.-85.degree. C., thereby obtaining a copolymer, and then removing the residual catalyst activity at a temperature of -100.degree..about.-25.degree. C.

Abstract: This invention relates to a process for preparing water soluble conductive polyaniline composite represented by the formula(III) which comprises reacting emeraldine base-type polyaniline(EB) representing by the formula(I) with poly(ethyleneglycol) hydrogen sulfate (PEGSF) represented by the formula(II), and to water soluble conductive polyaniline composite synthesized by the said process ##STR1## wherein, x is an integer or fractional number; y is 0 to 1 ##STR2## wherein, n is 4 to 200. ##STR3## wherein, x and n are same as defined above.

Abstract: Disclosed is a method for the isolation between active regions of a semiconductor device. The method provides an poly buffered local oxidation of silicon(PBLOCOS) technology. In this method, a non-doped polysilicon layer and the overlying amorphous silicon layer are used as a buffer layer. To form a field oxide region for isolation between semiconductor devices, first a pad oxide film, the buffer layer, silicon nitride layer are formed on a semiconductor substrate. Thereafter, patterning is performed to expose the pad oxide film at a selected region. Lastly, thermal oxidation is performed, thereby the exposed pad oxide is grown to form the field oxide.

Abstract: Conductive polymers having repeating units of formula (II) ##STR1## formed by chemical or electrochemical oxidation of aniline derivatives of formula (I) ##STR2## wherein R.sub.1 denotes --(CH.sub.2).sub.n --; n is an integer between 2 and 12; R.sub.2, R.sub.3, R.sub.4 and R.sub.5 denote hydrogens or one or two of them can be a halogen atom, methyl, methoxy or nitro groups; and X denotes hydrogen an alkali metal ion, an ammonium ion, an alkyl ammonium ion or an anilinium ion. The conductive polymers have excellent stability toward electrochemical redox cyclization and good processibility.

Abstract: Conductive polymers having repeating units of formula (II) ##STR1## formed by chemical or electrochemical oxidation of aniline derivatives of formula (I) ##STR2## wherein R.sub.1 denotes --(CH.sub.2).sub.n --; n is an integer between 2 and 12; R.sub.2, R.sub.3, R.sub.4 and R.sub.5 denote hydrogens or one or two of them can be a halogen atom, methyl, methoxy or nitro groups; and X denotes hydrogen an alkali metal ion, an ammonium ion, an alkyl ammonium ion or an anilinium ion. The conductive polymers have excellent stability toward electrochemical redox cyclization and good processibility.